公开(公告)号：US20190006339A1

公开(公告)日：2019-01-03

申请号：US15635329

申请日：2017-06-28

申请人： ASM Technology Singapore Pte Ltd

发明人： Hon Shing, John LAU ,  Ming LI ,  Chun Ho FAN ,  Teng Hock KUAH ,  Qingqian LI

IPC分类号： H01L25/18 ,  H01L23/31 ,  H01L23/00 ,  H01L25/10 ,  H01L23/367 ,  H01L21/56 ,  H01L25/00 ,  H01L21/683 ,  H01L21/78

摘要： An integrated fan-out wafer level package houses a semiconductor package having a first semiconductor die encapsulated by a dielectric compound. A plurality of redistribution layers are formed on a first side of the semiconductor package which are in electrical contact with contact pads of the first semiconductor die. A plurality of solder balls located on the first side of the semiconductor package is electrically connected to the contact pads of the semiconductor die via the redistribution layers. A second semiconductor die is further attached to the first side of the semiconductor package and is electrically connected to the contact pads of the first semiconductor die via the redistribution layers.

公开(公告)号：US20160336292A1

公开(公告)日：2016-11-17

申请号：US14708375

申请日：2015-05-11

申请人： ASM Technology Singapore Pte Ltd.

发明人： Dewen TIAN ,  Yiu Ming CHEUNG ,  Ming LI

IPC分类号： H01L23/00

CPC分类号： H01L24/81 ,  H01L24/75 ,  H01L2224/131 ,  H01L2224/16237 ,  H01L2224/751 ,  H01L2224/7525 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/75841 ,  H01L2224/81022 ,  H01L2224/81024 ,  H01L2224/81048 ,  H01L2224/81075 ,  H01L2224/81095 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/8118 ,  H01L2224/81191 ,  H01L2224/81444 ,  H01L2224/81815 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of bonding a die comprising solder bumps to a substrate comprising bond pads, the method comprising the steps of heating the die from a first temperature to a second temperature, wherein the first temperature is below the melting point of the solder bumps, and the second temperature is above the melting point of the solder bumps; moving the die relative to the substrate to a first height, whereat the solder bumps contact the bond pads; moving the die further away from the substrate to a second height, while maintaining contact between the solder bumps and bond pads; and thereafter cooling the die from the second temperature to a third temperature to allow the solder bumps to solidify so as to bond the die to the substrate.

摘要翻译： 一种将包括焊料凸块的管芯焊接到包括接合焊盘的衬底的方法，所述方法包括以下步骤：将管芯从第一温度加热到第二温度，其中第一温度低于焊料凸点的熔点，并且 第二温度高于焊锡凸点的熔点; 将所述管芯相对于所述衬底移动到第一高度，其中所述焊料凸块接触所述接合焊盘; 使模具更远离衬底移动到第二高度，同时保持焊料凸块和焊盘之间的接触; 然后将模具从第二温度冷却至第三温度，以允许焊料凸点固化，以将模具结合到基板。

公开(公告)号：US20160276177A1

公开(公告)日：2016-09-22

申请号：US14659172

申请日：2015-03-16

申请人： ASM TECHNOLOGY SINGAPORE PTE LTD

发明人： Qinglong ZHANG ,  John Hon Shing LAU ,  Ming LI ,  Michael ZAHN ,  Yiu Ming CHEUNG

IPC分类号： H01L21/56 ,  H01L25/00

CPC分类号： H01L21/563 ,  H01L21/561 ,  H01L21/565 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/27005 ,  H01L2224/2732 ,  H01L2224/29016 ,  H01L2224/29027 ,  H01L2224/32057 ,  H01L2224/32104 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/75272 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/83862 ,  H01L2224/83986 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15786 ,  H01L2924/1579 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01047

摘要： A method of feeding underfill material to fill a space between a semiconductor die and a substrate onto which the semiconductor die has been bonded, the method comprises positioning a stencil over the semiconductor die. The stencil has an elongated slot extending adjacent to an edge of the semiconductor die. Underfill material is printed through the slot such that the underfill material falls through the slot onto the substrate next to the edge of the semiconductor die. Thereafter, the underfill material is heated such that the underfill material flows across the space between the semiconductor die and the substrate from the edge of the semiconductor die to an opposite edge thereof through capillary action.

摘要翻译： 一种用于填充底部填充材料以填充半导体管芯和已经结合了半导体管芯的衬底之间的空间的方法，所述方法包括将模板定位在半导体管芯上。 模板具有与半导体管芯的边缘相邻延伸的细长槽。 底部填充材料通过槽打印，使得底部填充材料通过狭槽落在靠近半导体管芯边缘的衬底上。 此后，加热底部填充材料，使得底部填充材料通过毛细作用从半导体管芯的边缘流过半导体管芯和衬底之间的空间到其相对的边缘。