Power semiconductor module with low gate path inductance

    公开(公告)号:US11018109B2

    公开(公告)日:2021-05-25

    申请号:US16442923

    申请日:2019-06-17

    Abstract: A power semiconductor module, including a housing; a power semiconductor chip within the housing; power terminals protruding from the housing and electrically interconnected with power electrodes of the semiconductor chip; and auxiliary terminals protruding from the housing and electrically interconnected with a gate electrode and one of the power electrodes; wherein three auxiliary terminals are arranged in a coaxial auxiliary terminal arrangement, which comprises an inner and two outer auxiliary terminals, which are arranged on opposing sides of the inner auxiliary terminal. The inner auxiliary terminal is electrically interconnected with the gate electrode or one of the power electrodes and the two outer auxiliary terminals are electrically connected with the other one of the gate electrode and the one of the power electrodes.

    Method for operating an electrical circuit, electrical circuit, and motor vehicle

    公开(公告)号:US11296686B2

    公开(公告)日:2022-04-05

    申请号:US16885784

    申请日:2020-05-28

    Applicant: AUDI AG

    Abstract: A method for operating an electrical circuit including at least one half-bridge formed from two transistors wherein the electrical circuit is switched over between a first switching state, in which the first transistor of the half-bridge is switched to conductive by a first voltage value of a first control voltage and the second transistor of the half-bridge is switched to blocking by a second voltage value of a second control voltage, and a second switching state, in which the first transistor is switched to blocking by a second voltage value of the first control voltage and the second transistor is switched to conductive by a first voltage value of the second control voltage, wherein a dead time state, in which both transistors are switched to blocking, is assumed chronologically between the first switching state and the second switching state.

    Circuit arrangement for an electronic device

    公开(公告)号:US10439605B2

    公开(公告)日:2019-10-08

    申请号:US15887259

    申请日:2018-02-02

    Applicant: AUDI AG

    Abstract: A circuit arrangement for an electronic device having at least two semiconductor elements of the same type connected in parallel with each other. At least one first semiconductor element has a first characteristic and at least one second semiconductor element has a second characteristic. Each of the two characteristics is defined by at least one power loss. The at least one power loss of the at least one first semiconductor element has a first value, and the at least one power loss of the at least one second semiconductor element has a second value. The two values of the at least one power loss are different.

    Method and system for operating a motor vehicle

    公开(公告)号:US10184385B2

    公开(公告)日:2019-01-22

    申请号:US15446572

    申请日:2017-03-01

    Applicant: AUDI AG

    Abstract: A motor vehicle can be powered by a combustion engine or an electric machine or both. Coolant is conveyed in the coolant circuit first to the electric machine before being conveyed from the electric machine to the combustion engine for cooling both the combustion engine and the electric machine. A cooling device adjusts a temperature of the coolant in the coolant circuit in such a way that the cooling device adjusts the coolant to a first temperature, when the motor vehicle is powered by the combustion engine, and to a second temperature which is less than the first temperature, when the motor vehicle is powered by the electric machine and the combustion engine.

    Power electronics module
    8.
    发明授权

    公开(公告)号:US11183489B2

    公开(公告)日:2021-11-23

    申请号:US16603667

    申请日:2018-04-11

    Applicant: AUDI AG

    Abstract: A power electronics module includes a substrate with a substrate metallization layer, which is separated into conducting areas for providing conducting paths for the power electronics module; a semiconductor switch chip bonded with a first power electrode to a first conducting area of the substrate metallization layer; a conductor plate bonded to a second power electrode of the semiconductor switch chip opposite to the first power electrode.

    POWER SEMICONDUCTOR MODULE WITH LOW GATE PATH INDUCTANCE

    公开(公告)号:US20190304946A1

    公开(公告)日:2019-10-03

    申请号:US16442923

    申请日:2019-06-17

    Abstract: A power semiconductor module, including a housing; a power semiconductor chip within the housing; power terminals protruding from the housing and electrically interconnected with power electrodes of the semiconductor chip; and auxiliary terminals protruding from the housing and electrically interconnected with a gate electrode and one of the power electrodes; wherein three auxiliary terminals are arranged in a coaxial auxiliary terminal arrangement, which comprises an inner and two outer auxiliary terminals, which are arranged on opposing sides of the inner auxiliary terminal. The inner auxiliary terminal is electrically interconnected with the gate electrode or one of the power electrodes and the two outer auxiliary terminals are electrically connected with the other one of the gate electrode and the one of the power electrodes.

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