公开(公告)号：US20210320323A1

公开(公告)日：2021-10-14

申请号：US17185122

申请日：2021-02-25

申请人： Aditi CHANDRA ,  Richard VAN DER LINDE ,  Paul BUTLER ,  Mao ITO ,  Jon SIMMONS ,  Miki TRIFUNOVIC ,  Alex YAN ,  Arvind KAMATH ,  Shoba RAO

发明人： Aditi CHANDRA ,  Richard VAN DER LINDE ,  Paul BUTLER ,  Mao ITO ,  Jon SIMMONS ,  Miki TRIFUNOVIC ,  Alex YAN ,  Arvind KAMATH ,  Shoba RAO

IPC分类号： H01M10/0562 ,  H01M10/0583 ,  H01M50/178

摘要： A solid-state battery and a method of making the same are disclosed. The battery includes a base frame or support, first and second exterior contacts on the base frame/support, stacked solid-state battery unit cells, first and second electrical connections, and encapsulation in contact with the base frame/support and covering the solid-state battery unit cells and the electrical connections. Each stacked solid-state battery unit cell is on a metal substrate and has exposed cathode and anode current collectors. The electrical connections respectively electrically connect the exposed cathode and anode current collectors to the first and second exterior contacts. The method includes forming the stacked solid-state battery unit cells on the base frame/support, forming the exterior contacts on the base frame/support, electrically connecting the exposed cathode and anode current collectors to the respective exterior contacts, and encapsulating the solid-state battery unit cells and the electrical connections.

公开(公告)号：US20210320355A1

公开(公告)日：2021-10-14

申请号：US17185111

申请日：2021-02-25

申请人： Richard VAN DER LINDE ,  Aditi CHANDRA ,  Mao ITO ,  Alex YAN ,  Arvind KAMATH ,  Shoba RAO ,  Jon SIMMONS

发明人： Richard VAN DER LINDE ,  Aditi CHANDRA ,  Mao ITO ,  Alex YAN ,  Arvind KAMATH ,  Shoba RAO ,  Jon SIMMONS

IPC分类号： H01M50/186 ,  H01M10/058

摘要： The present disclosure pertains to a battery and a method of making the same. The battery includes first and second metal substrates, a first solid-state and/or thin-film battery cell on the first metal substrate, a second solid-state and/or thin-film battery cell on the second metal substrate, and a hermetic seal in a peripheral region of the first and second metal substrates. The first and second battery cells are between the first and second metal substrates, and face each other. The method includes respectively forming first and second solid-state and/or thin-film battery cells on first and second metal substrates, placing the second battery cell on the first battery cell so that the first and second battery cells are between the first and second metal substrates, and hermetically sealing the first and second battery cells in a peripheral region of the first and second metal substrates.

公开(公告)号：US20230352781A1

公开(公告)日：2023-11-02

申请号：US18340864

申请日：2023-06-25

申请人： RICHARD VAN DER LINDE ,  Aditi CHANDRA ,  Mao ITO ,  Alex YAN ,  Arvind KAMATH ,  Shoba RAO ,  Jonathon Y Simmons

发明人： RICHARD VAN DER LINDE ,  Aditi CHANDRA ,  Mao ITO ,  Alex YAN ,  Arvind KAMATH ,  Shoba RAO ,  Jonathon Y Simmons

IPC分类号： H01M50/186 ,  H01M10/058

CPC分类号： H01M50/186 ,  H01M10/058

摘要： The present disclosure pertains to a battery and a method of making the same. The battery includes first and second metal substrates, a first solid-state and/or thin-film battery cell on the first metal substrate, a second solid-state and/or thin-film battery cell on the second metal substrate, and a hermetic seal in a peripheral region of the first and second metal substrates. The first and second battery cells are between the first and second metal substrates, and face each other. The method includes respectively forming first and second solid-state and/or thin-film battery cells on first and second metal substrates, placing the second battery cell on the first battery cell so that the first and second battery cells are between the first and second metal substrates, and hermetically sealing the first and second battery cells in a peripheral region of the first and second metal substrates.

公开(公告)号：US20210074653A1

公开(公告)日：2021-03-11

申请号：US17012010

申请日：2020-09-03

申请人： Miki TRIFUNOVIC ,  Aditi CHANDRA ,  Robert FULLER ,  Raymond VASS ,  Patricia BECK ,  Mao ITO ,  Arvind KAMATH

发明人： Miki TRIFUNOVIC ,  Aditi CHANDRA ,  Robert FULLER ,  Raymond VASS ,  Patricia BECK ,  Mao ITO ,  Arvind KAMATH

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/14 ,  H01L23/15 ,  H01L23/29 ,  H01L23/31 ,  H01L21/48 ,  B81B7/00 ,  H01L27/12 ,  H01M2/02

摘要： Embodiments of the disclosure pertain to a multi-layer barrier for a flexible substrate supporting electronic and/or microelectromechanical system (MEMS) devices. Apparatuses including a substrate, a first metal nitride layer, a first oxide layer on or over the first metal nitride layer, a second metal nitride layer and a second oxide layer on or over the first oxide layer, and a device layer on or over the first oxide layer or both the first and second oxide layers are disclosed. When the device layer is on or over the first oxide layer, the second metal nitride layer is on or over the device layer, and the second oxide layer is on or over the on or over the second metal nitride layer. When the device layer is on or over both the first and second oxide layers, the second metal nitride layer is on or over the second oxide layer. A method of making the same is also disclosed.

公开(公告)号：US20200273719A1

公开(公告)日：2020-08-27

申请号：US16802544

申请日：2020-02-26

申请人： Miki TRIFUNOVIC ,  Aditi CHANDRA ,  Anand DESHPANDE ,  Arvind KAMATH

发明人： Miki TRIFUNOVIC ,  Aditi CHANDRA ,  Anand DESHPANDE ,  Arvind KAMATH

IPC分类号： H01L21/48 ,  H01L21/78 ,  H01L23/495 ,  H01L23/66 ,  H01Q1/38

摘要： A method of attaching one or more active devices on one or more substrates to a metal carrier by “hot stamping” is disclosed. The method includes contacting the active device(s) on the substrate(s) with the metal carrier, and applying pressure to and heating the active device(s) on the substrate(s) and the metal carrier sufficiently to affix or attach the active device(s) on the substrate(s) to the metal carrier. The active device(s) may include an integrated circuit. The substrate(s) may include a metal substrate on the backside of the active device and a protective/carrier film on the frontside of the active device. The protective/carrier film may be or include an organic polymer. The metal carrier may be or include a metal foil. Various examples of the method further include thinning the metal substrate, dicing the active device(s) and a continuous substrate, and/or separating the active devices.

公开(公告)号：US20190267698A1

公开(公告)日：2019-08-29

申请号：US16287126

申请日：2019-02-27

申请人： Somnath MUKHERJEE ,  Aditi CHANDRA ,  Mao ITO ,  Arvind KAMATH ,  Scott BRUNER ,  Sambhu KUNDU ,  Anand DESHPANDE

发明人： Somnath MUKHERJEE ,  Aditi CHANDRA ,  Mao ITO ,  Arvind KAMATH ,  Scott BRUNER ,  Sambhu KUNDU ,  Anand DESHPANDE

IPC分类号： H01Q1/22 ,  H01L23/532 ,  H01L23/66 ,  H01L23/64 ,  H01L23/522 ,  H01L23/528

摘要： A wireless communication device having an integrated antenna, and methods for making and using the same are disclosed. The device generally includes (a) a substrate; (b) an integrated circuit (IC) comprising a plurality of printed and/or thin film layers and/or structures on the substrate, (c) a dielectric or insulator layer in at least one area of the substrate other than the IC; and (d) an antenna on the dielectric or insulator layer, comprising one or more metal traces. The plurality of printed and/or thin film layers and/or structures include an uppermost layer of metal. The antenna has (i) an inner terminal continuous with the uppermost layer of metal or connected to the uppermost layer of metal through one or more contacts, and (ii) an outer terminal connected to the uppermost layer of metal through one or more contacts and optionally a metal bridge or strap

公开(公告)号：US20190013203A1

公开(公告)日：2019-01-10

申请号：US16030269

申请日：2018-07-09

申请人： Raghav SREENIVASAN ,  Aditi CHANDRA ,  Arvind KAMATH

发明人： Raghav SREENIVASAN ,  Aditi CHANDRA ,  Arvind KAMATH

IPC分类号： H01L21/228 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092

摘要： A method of making a MOS device, a MOS device containing an aluminum nitride layer, and a CMOS circuit are disclosed. The method includes depositing an aluminum nitride layer on a structure including a silicon layer, depositing a dopant ink on the structure, and diffusing the dopant through the aluminum nitride layer into the silicon layer. The structure also includes a gate oxide layer on the silicon layer and a gate on the gate oxide layer. The dopant ink includes a dopant and a solvent. The MOS device includes a silicon layer, a gate oxide layer on the silicon layer, a gate on the gate oxide layer, and an aluminum nitride layer on the gate. The silicon layer includes a dopant on opposite sides of the gate.

公开(公告)号：US20170040665A1

公开(公告)日：2017-02-09

申请号：US15230348

申请日：2016-08-05

申请人： Mao TAKASHIMA ,  Aditi CHANDRA ,  Somnath MUKHERJEE ,  Gloria WONG ,  Khanh VAN TU ,  Joey LI ,  Anton POPIOLEK ,  Arvind KAMATH

发明人： Mao TAKASHIMA ,  Aditi CHANDRA ,  Somnath MUKHERJEE ,  Gloria WONG ,  Khanh VAN TU ,  Joey LI ,  Anton POPIOLEK ,  Arvind KAMATH

IPC分类号： H01Q1/22 ,  H01Q1/52 ,  H01Q17/00

CPC分类号： H01Q1/2291 ,  H01Q7/06

摘要： A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.

摘要翻译： 公开了一种无线通信装置及其制造和使用方法。 无线通信设备包括其上具有天线和/或电感器的基板，与天线和/或电感器重叠的图案化铁氧体层，以及电连接到天线和/或电感器的电容器。 无线通信设备还可以包括集成电路，其包括被配置为将第一无线信号转换为电信号的接收机和被配置为生成第二无线信号的发射机，所述天线被配置为接收第一无线信号并发送或广播 第二无线信号。 图案化的铁氧体层有利地减轻了金属物体靠近与天线磁耦合的读取器和/或应答器的有害影响。

公开(公告)号：US20090085095A1

公开(公告)日：2009-04-02

申请号：US12243880

申请日：2008-10-01

申请人： Arvind KAMATH ,  Erik SCHER ,  Patrick SMITH ,  Aditi CHANDRA ,  Steven MOLESA

发明人： Arvind KAMATH ,  Erik SCHER ,  Patrick SMITH ,  Aditi CHANDRA ,  Steven MOLESA

IPC分类号： H01L29/788 ,  H01L29/786 ,  H01L29/00 ,  H01L21/208

CPC分类号： H01L21/36 ,  C23C18/08 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1295 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76871 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L28/40 ,  H01L29/0657 ,  H01L29/66143 ,  H01L29/6675 ,  H01L29/7881 ,  H01L29/872 ,  H05K1/16 ,  H05K1/162 ,  H05K3/125 ,  H05K2201/098

摘要： The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and/or semiconductor layers with smooth and/or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and/or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature. Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.

摘要翻译： 本发明涉及具有平滑和/或圆顶形轮廓的电介质，导体和/或半导体层的电活性器件（例如，电容器，晶体管，二极管，浮动栅极存储单元等）和形成这种器件的方法 通过沉积或印刷（例如喷墨印刷）包括半导体，金属或电介质前体的油墨组合物。 平滑和/或圆顶形的横截面轮廓允许平滑的拓扑转变而没有尖锐的步骤，防止沉积期间的特征不连续性，并允许随后沉积的结构的更完整的阶梯覆盖。 本发明的轮廓允许通过热氧化均匀生长氧化物层，以及基本均匀的结构蚀刻速率。 这样的氧化物层可以具有均匀的厚度并且提供基本的电活性特征的基本上完整的覆盖。 均匀蚀刻允许通过简单的各向同性蚀刻来降低电活性结构的临界尺寸的有效方法。

公开(公告)号：US20180205135A1

公开(公告)日：2018-07-19

申请号：US15916774

申请日：2018-03-09

申请人： Mao TAKASHIMA ,  Aditi CHANDRA ,  Somnath MUKHERJEE ,  Gloria WONG ,  Khanh VAN TU ,  Joey LI ,  Anton POPIOLEK ,  Arvind KAMATH

发明人： Mao TAKASHIMA ,  Aditi CHANDRA ,  Somnath MUKHERJEE ,  Gloria WONG ,  Khanh VAN TU ,  Joey LI ,  Anton POPIOLEK ,  Arvind KAMATH

IPC分类号： H01Q1/22 ,  H01Q7/06

CPC分类号： H01Q1/2291 ,  H01Q1/2225 ,  H01Q7/06

摘要： A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.