公开(公告)号：US08900915B2

公开(公告)日：2014-12-02

申请号：US13081257

申请日：2011-04-06

Applicant: Joerg Rockenberger ,  Fabio Zürcher ,  Mao Takashima

Inventor： Joerg Rockenberger ,  Fabio Zürcher ,  Mao Takashima

IPC: H01L31/078 ,  H01L21/02 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L21/0237 ,  H01L21/02428 ,  H01L21/0243 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02628 ,  H01L21/02661 ,  H01L21/228 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Epitaxial structures, methods of making epitaxial structures, and devices incorporating such epitaxial structures are disclosed. The methods and the structures employ a liquid-phase Group IVA semiconductor element precursor ink (e.g., including a cyclo- and/or polysilane) and have a relatively good film quality (e.g., texture, density and/or purity). The Group IVA semiconductor element precursor ink forms an epitaxial film or feature when deposited on a (poly)crystalline substrate surface and heated sufficiently for the Group IVA semiconductor precursor film or feature to adopt the (poly)crystalline structure of the substrate surface. Devices incorporating a selective emitter that includes the present epitaxial structure may exhibit improved power conversion efficiency relative to a device having a selective emitter made without such a structure due to the improved film quality and/or the perfect interface formed in regions between the epitaxial film and contacts formed on the film.

Abstract translation: 公开了外延结构，制造外延结构的方法和结合这种外延结构的器件。 方法和结构采用液相IVA族半导体元件前体油墨（例如，包括环和/或聚硅烷）并且具有相对较好的膜质量（例如质地，密度和/或纯度）。 当IVA半导体元件前体油墨沉积在（多）晶体衬底表面上时，IVA半导体元件前体油墨形成外延膜或特征，并充分加热以使IVA族半导体前体膜或特征采用衬底表面的（多）晶体结构。 结合包括本外延结构的选择性发射极的器件相对于具有选择性发射极的器件而言，具有提高的功率转换效率，由于改善的膜质量和/或在外延膜和 在电影上形成的触点。

公开(公告)号：US08617992B2

公开(公告)日：2013-12-31

申请号：US13427091

申请日：2012-03-22

Applicant: Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

Inventor： Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

IPC: H01L21/44

CPC classification number: H01L21/288 ,  H01L21/28518 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/78618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.

Abstract translation: 公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。 可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。

公开(公告)号：US08124040B1

公开(公告)日：2012-02-28

申请号：US12858327

申请日：2010-08-17

Applicant: Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

Inventor： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

IPC: C01B31/36

CPC classification number: C01B6/00 ,  C01B6/003 ,  C01B6/34

Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

Abstract translation: 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。

公开(公告)号：US07799302B1

公开(公告)日：2010-09-21

申请号：US11934734

申请日：2007-11-02

Applicant: Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

Inventor： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

IPC: C01B33/26

CPC classification number: C01B6/00 ,  C01B6/003 ,  C01B6/34

Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

Abstract translation: 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。

公开(公告)号：US07315068B2

公开(公告)日：2008-01-01

申请号：US11077240

申请日：2005-03-09

Applicant: Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

Inventor： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

IPC: H01L29/94

CPC classification number: H01L27/1292

Abstract: The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

Abstract translation: 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

公开(公告)号：US20050164480A1

公开(公告)日：2005-07-28

申请号：US11077240

申请日：2005-03-09

Applicant: Scott Haubrich ,  Klaus Kunze ,  James Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Christopher Spindt

Inventor： Scott Haubrich ,  Klaus Kunze ,  James Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Christopher Spindt

IPC: H01L21/44 ,  H01L21/76 ,  H01L21/77

CPC classification number: H01L27/1292

Abstract: The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

公开(公告)号：US06911385B1

公开(公告)日：2005-06-28

申请号：US10226903

申请日：2002-08-22

Applicant: Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

Inventor： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

IPC: H01L21/44 ,  H01L21/76 ,  H01L21/77

CPC classification number: H01L27/1292

Abstract: The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

Abstract translation: 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

公开(公告)号：US20190019074A1

公开(公告)日：2019-01-17

申请号：US15750481

申请日：2016-08-05

Applicant: Mao TAKASHIMA ,  Junfeng MEI

Inventor： Mao TAKASHIMA ,  Junfeng MEI ,  Joey LI

IPC: G06K19/077 ,  H01Q1/22

Abstract: A wireless (e.g., near field or RF) communication device, and methods of manufacturing the same are disclosed. The method of manufacturing the wireless communication device includes forming an integrated circuit on a first substrate, printing stud bumps on input and/or output terminals of the integrated circuit, forming an antenna on a second substrate, and electrically connecting ends of the antenna to the stud bumps. The antenna is configured to (i) receive and (ii) transmit or broadcast wireless signals.

公开(公告)号：US08367031B1

公开(公告)日：2013-02-05

申请号：US13349838

申请日：2012-01-13

Applicant: Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

Inventor： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

IPC: C01B31/36

CPC classification number: C01B6/00 ,  C01B6/003 ,  C01B6/34

Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

Abstract translation: 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。

公开(公告)号：US08066805B2

公开(公告)日：2011-11-29

申请号：US12131002

申请日：2008-05-30

Applicant: Fabio Zürcher ,  Aditi Chandra ,  Wenzhuo Guo ,  Erik Scher ,  Mao Takashima ,  Joerg Rockenberger

Inventor： Fabio Zürcher ,  Aditi Chandra ,  Wenzhuo Guo ,  Erik Scher ,  Mao Takashima ,  Joerg Rockenberger

IPC: C23C16/00 ,  C09D1/00 ,  B05D3/00

CPC classification number: C23C18/1692 ,  B41M3/006 ,  C08K3/10 ,  C09D7/61 ,  C09D11/38 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/31 ,  C23C18/44

Abstract: Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film.

Abstract translation: 公开了可印刷金属配方，制备方法，以及从金属油墨前体涂布或印刷薄膜的方法。 金属配方通常包括一种或多种组合物4,5,6,7,8,9,10,11或12金属盐或金属配合物，一种或多种适于促进制剂涂布和/或印刷的溶剂，以及 一种或多种任选的添加剂，其在将金属盐或金属络合物还原成元素金属和/或其合金时形成（仅）气态或挥发性副产物。 制剂可以通过将金属盐或金属络合物和溶剂组合，并将金属盐或金属络合物溶解在溶剂中来形成制剂， 。 薄膜可以通过在基底上涂覆或印刷金属制剂来制备; 除去溶剂以形成含金属的前体膜; 并还原含金属的前体膜。