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公开(公告)号：US20090090900A1
公开(公告)日：2009-04-09
申请号：US11989512
申请日：2006-07-28
申请人： Adrian Avramescu , Volker Harle , Lutz Hoppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian Avramescu , Volker Harle , Lutz Hoppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p-doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n-doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and a method for producing such a semiconductor chip.
摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的p掺杂阻挡层（1），有源区域（2），其中 适用于产生电磁辐射，有源区基于六方晶系化合物半导体，以及用于有源区（2）的n掺杂势垒层（3）。 还公开了包括这种半导体芯片的部件，以及这种半导体芯片的制造方法。
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公开(公告)号：US08994000B2
公开(公告)日：2015-03-31
申请号：US13546857
申请日：2012-07-11
申请人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
IPC分类号： H01L29/06 , H01S5/343 , B82Y20/00 , H01L33/04 , H01S5/042 , H01L33/06 , H01L33/32 , H01S5/20 , H01S5/30 , H01S5/32 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2） 用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。 还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。
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公开(公告)号：US08908733B2
公开(公告)日：2014-12-09
申请号：US13262583
申请日：2010-03-10
申请人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
发明人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfills the condition: 40≦∫c(z)dz−2.5N−1.5∫dz≦80.
摘要翻译： 在光电子半导体芯片（1）的至少一个实施例中，后者基于氮化物材料系统并且包括至少一个有源量子阱（2）。 至少一个有源量子阱（2）被设计成在操作时产生电磁辐射。 此外，至少一个有源量子阱（2）在平行于半导体芯片（1）的生长方向z的方向上包括N个连续区域（A），N是大于或等于2的自然数。至少 有源量子阱（2）的两个区域（A）具有相互不同的平均铟含量c。 此外，至少一个有源量子阱（2）满足条件：40＆nlE;∫c（z）dz-2.5N-1.5∫dz＆nlE; 80。
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公开(公告)号：US20130028281A1
公开(公告)日：2013-01-31
申请号：US13262583
申请日：2010-03-10
申请人： Adrian Avramescu , Désirée Queren , Cristoph Eichler , Matthias Sabathil , Stephen Lutgen , Uwe Strauss
发明人： Adrian Avramescu , Désirée Queren , Cristoph Eichler , Matthias Sabathil , Stephen Lutgen , Uwe Strauss
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfils the condition: 40≦∫c(z)dz−2.5N−1.5∫dz≦80
摘要翻译： 在光电子半导体芯片（1）的至少一个实施例中，后者基于氮化物材料系统并且包括至少一个有源量子阱（2）。 至少一个有源量子阱（2）被设计成在操作时产生电磁辐射。 此外，至少一个有源量子阱（2）在平行于半导体芯片（1）的生长方向z的方向上包括N个连续区域（A），N是大于或等于2的自然数。至少 有源量子阱（2）的两个区域（A）具有相互不同的平均铟含量c。 此外，至少一个有源量子阱（2）满足条件：40＆nlE;∫c（z）dz-2.5N-1.5∫dz＆nlE; 80
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5.发明授权公开(公告)号：US08502264B2
公开(公告)日：2013-08-06
申请号：US12298723
申请日：2007-04-20
IPC分类号： H01L33/02
CPC分类号： H01L31/184 , H01L21/76254 , H01L31/1852 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y02E10/544
摘要： A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).
摘要翻译： 一种复合基板（1），其包括固定在所述基板主体（2）上的基板主体（2）和有效层（31）。 在实用层（31）和基板主体（2）之间布置有平坦化层（4）。 复合基板（1）的制造方法在设置的实用基板（3）上涂敷平坦化层（4）。 该实用基板（3）固定在复合基板（1）的基板主体（2）上。 随后分离实用基板（3），其中保留用于基板主体（2）上的复合基板（1）的效用基板（3）的有用层（31）。
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6.发明申请公开(公告)号：US20090206348A1
公开(公告)日：2009-08-20
申请号：US12298723
申请日：2007-04-20
CPC分类号： H01L31/184 , H01L21/76254 , H01L31/1852 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y02E10/544
摘要： A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).
摘要翻译： 一种复合基板（1），其包括固定在所述基板主体（2）上的基板主体（2）和有效层（31）。 在实用层（31）和基板主体（2）之间布置有平坦化层（4）。 复合基板（1）的制造方法在设置的实用基板（3）上涂敷平坦化层（4）。 该实用基板（3）固定在复合基板（1）的基板主体（2）上。 随后分离实用基板（3），其中保留用于基板主体（2）上的复合基板（1）的效用基板（3）的有用层（31）。
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公开(公告)号：US08858030B2
公开(公告)日：2014-10-14
申请号：US13641652
申请日：2011-04-06
IPC分类号： F21V9/00 , H01S5/00 , H01S5/028 , H01S5/026 , H01S5/024 , H01S5/20 , H01S5/10 , H01S5/0683 , H01S5/022 , H01S5/22
CPC分类号： H01S5/0078 , H01S5/02212 , H01S5/02252 , H01S5/02461 , H01S5/02476 , H01S5/0264 , H01S5/0286 , H01S5/0683 , H01S5/1085 , H01S5/2022 , H01S5/22 , H01S2301/18
摘要： A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface, and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.
摘要翻译： 用于发射相干电磁辐射的激光源具有垂直的远场辐射轮廓，具有用于产生相干电磁辐射的一系列半导体层。 有源区位于衬底上。 至少从辐射输出表面的主发射区域发射相干电磁辐射，并且辐射输出表面由半导体层序列的侧表面形成。 滤波器元件抑制垂直远场辐射轮廓中的相干电磁辐射。 辐射在操作期间产生并由辐射输出表面的辅助发射区发射。 辅助发射区域与主发射区域垂直偏移并在空间上分离。
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公开(公告)号：US20130107534A1
公开(公告)日：2013-05-02
申请号：US13641652
申请日：2011-04-06
IPC分类号： H01S5/00
CPC分类号： H01S5/0078 , H01S5/02212 , H01S5/02252 , H01S5/02461 , H01S5/02476 , H01S5/0264 , H01S5/0286 , H01S5/0683 , H01S5/1085 , H01S5/2022 , H01S5/22 , H01S2301/18
摘要： A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.
摘要翻译： 用于发射相干电磁辐射的激光源具有垂直的远场辐射轮廓，具有用于产生相干电磁辐射的一系列半导体层。 有源区位于衬底上。 相干电磁辐射在至少从辐射输出表面的主发射区域发射的方向上发射，辐射输出表面由半导体层序列的侧表面形成。 滤波器元件抑制垂直远场辐射轮廓中的相干电磁辐射。 辐射在操作期间产生并由辐射输出表面的辅助发射区发射。 辅助发射区域与主发射区域垂直偏移并在空间上分离。
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