公开(公告)号：US20120280207A1

公开(公告)日：2012-11-08

申请号：US13546857

申请日：2012-07-11

申请人： Adrian AVRAMESCU ,  Volker Härle ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

发明人： Adrian AVRAMESCU ,  Volker Härle ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

IPC分类号： H01L33/06

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3202 ,  H01S5/3407 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2） 用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。 还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。

公开(公告)号：US08994000B2

公开(公告)日：2015-03-31

申请号：US13546857

申请日：2012-07-11

申请人： Adrian Avramescu ,  Volker Härle ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

发明人： Adrian Avramescu ,  Volker Härle ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

IPC分类号： H01L29/06 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/04 ,  H01S5/042 ,  H01L33/06 ,  H01L33/32 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3202 ,  H01S5/3407 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2） 用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。 还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。

公开(公告)号：US09806223B2

公开(公告)日：2017-10-31

申请号：US12985903

申请日：2011-01-06

申请人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

发明人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

IPC分类号： H01L33/32 ,  H01L33/42 ,  H01L33/00 ,  H01L21/02 ,  H01L33/16

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0079 ,  H01L33/16

摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

公开(公告)号：US07981712B2

公开(公告)日：2011-07-19

申请号：US12011458

申请日：2008-01-25

申请人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

发明人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

IPC分类号： H01L21/00 ,  H01L29/22 ,  H01L21/28 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0079 ,  H01L33/16

摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

摘要翻译： 规定了基于氮化物半导体系统的光电子半导体芯片的制造方法。 该方法包括以下步骤：形成具有至少一个p掺杂区域的半导体部分; 以及在所述半导体芯片的生长方向上形成设置在所述半导体部分的下游的覆盖层，所述覆盖层具有至少一个n掺杂半导体层。 在形成覆盖层之前或期间，实现适合于电激活p掺杂区域的活化步骤。 另外规定了可以通过该方法制造的光电子半导体芯片。

公开(公告)号：US20120299049A1

公开(公告)日：2012-11-29

申请号：US13497733

申请日：2010-09-10

申请人： Patrick Rode ,  Lutz Höppel ,  Norwin von Malm ,  Matthias Sabathil ,  Jürgen Moosburger

发明人： Patrick Rode ,  Lutz Höppel ,  Norwin von Malm ,  Matthias Sabathil ,  Jürgen Moosburger

IPC分类号： H01L33/48 ,  H01R43/16

CPC分类号： H01L27/153 ,  G01R31/318516 ,  H01H85/0417 ,  H01H85/32 ,  H01L23/5256 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/62 ,  H01L51/50 ,  H01L2224/73265 ,  H01L2924/00 ,  H01L2924/0002 ,  H02H3/046 ,  H03K17/74 ,  H03K19/17728 ,  H05B33/083 ,  H05B33/0893 ,  Y10T29/49204

摘要： An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected.

摘要翻译： 光电子半导体芯片具有带有第一端子和第二端子的第一半导体功能区域。 接触结构与光电子半导体芯片电接触。 接触结构电连接到第一半导体功能区。 接触结构具有可断开的导体结构。 如果导体结构不断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流通路。 如果导体结构断开，则该路径中断。 或者，如果导体结构断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流路径。 如果导体结构未断开，则导体结构将第一端子连接到第二端子并使第一半导体功能区域短路。

公开(公告)号：US20140145227A1

公开(公告)日：2014-05-29

申请号：US13819873

申请日：2011-08-17

申请人： Lutz Höppel ,  Norwin von Malm ,  Matthias Sabathil

发明人： Lutz Höppel ,  Norwin von Malm ,  Matthias Sabathil

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier.

摘要翻译： 发光二极管芯片包括半导体本体，其包括辐射产生有源区，至少两个电接触有源区的接触位置，载体和布置在载体和半导体本体之间的连接介质，其中半导体主体包括粗糙化 在面向载体的外表面上，半导体主体通过连接介质机械连接到载体，连接介质局部直接接触半导体本体和载体，并且至少两个接触位置被布置在半导体本体的上侧 面向远离运营商。

公开(公告)号：US09601663B2

公开(公告)日：2017-03-21

申请号：US13819873

申请日：2011-08-17

申请人： Lutz Höppel ,  Norwin von Malm ,  Matthias Sabathil

发明人： Lutz Höppel ,  Norwin von Malm ,  Matthias Sabathil

IPC分类号： H01L33/00 ,  H01L33/22

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier.

公开(公告)号：US08907359B2

公开(公告)日：2014-12-09

申请号：US13124707

申请日：2009-09-16

申请人： Martin Strassburg ,  Lutz Höppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

发明人： Martin Strassburg ,  Lutz Höppel ,  Matthias Peter ,  Ulrich Zehnder ,  Tetsuya Taki ,  Andreas Leber ,  Rainer Butendeich ,  Thomas Bauer

IPC分类号： H01L33/60 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).

摘要翻译： 一种光电子半导体部件，包括基于氮化物化合物半导体的半导体层序列（3），并且包含n掺杂区域（4），p掺杂区域（8）和有源区域（5） 区域（4）和p掺杂区域（8）。 p掺杂区域（8）包括由In x Al y Ga 1-x-y N组成的p型接触层（7），其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和x + y和nlE; 1。 p型接触层（7）与由金属，金属合金或透明导电氧化物构成的连接层（9）相邻，其中p型接触层（7）具有第一畴（1） 面取向和在与连接层（9）的界面处具有N面取向的第二域（2）。

公开(公告)号：US09219199B2

公开(公告)日：2015-12-22

申请号：US14234499

申请日：2012-07-23

申请人： Gudrun Lindberg ,  Lutz Höppel ,  Heribert Zull

发明人： Gudrun Lindberg ,  Lutz Höppel ,  Heribert Zull

IPC分类号： H01L33/00 ,  H01L33/44 ,  H01S5/028

CPC分类号： H01L33/44 ,  H01L33/005 ,  H01S5/0282

摘要： An optoelectronic component includes a semiconductor layer sequence having an optoelectronically active region; a dielectric layer on the semiconductor layer sequence; and a metal layer on the dielectric layer, wherein an adhesion layer is arranged between the dielectric layer and the metal layer, the adhesion layer being covalently bonded to the dielectric layer and to the metal layer.

摘要翻译： 光电子部件包括具有光电活性区域的半导体层序列; 半导体层序列上的电介质层; 以及在所述电介质层上的金属层，其中在所述电介质层和所述金属层之间设置粘合层，所述粘附层共价键合到所述电介质层和所述金属层。

公开(公告)号：US08956897B2

公开(公告)日：2015-02-17

申请号：US13598896

申请日：2012-08-30

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L33/38 ,  H01L33/22 ,  H01L33/14 ,  H01L33/00 ,  H01L33/62

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。