Amine-free deposition of metal-nitride films
    1.
    发明申请
    Amine-free deposition of metal-nitride films 有权
    无氮化物沉积金属氮化物膜

    公开(公告)号:US20070075427A1

    公开(公告)日:2007-04-05

    申请号:US11240005

    申请日:2005-09-30

    IPC分类号: H01L29/40 H01L21/44

    摘要: A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

    摘要翻译: 形成金属碳化物层的方法开始于提供衬底,有机金属前体材料,至少一种掺杂剂如氮气,以及诸如氢等离子体的等离子体。 将基板放置在反应室内; 并加热。 然后进行处理循环,其中工艺循环包括将有机金属前体材料脉冲到反应室中,将掺杂剂脉冲到反应室中,并将等离子体脉冲到反应室中,使得有机金属前体材料,掺杂剂 并且等离子体在基板表面反应形成金属碳化物层。 可以重复和改变工艺循环以形成渐变的金属碳化物层。

    Organometallic compounds, processes for the preparation thereof and methods of use thereof
    2.
    发明申请
    Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
    有机金属化合物,其制备方法及其使用方法

    公开(公告)号:US20070069177A1

    公开(公告)日:2007-03-29

    申请号:US11501075

    申请日:2006-08-09

    IPC分类号: H01M4/88 H01B1/12 H01B1/00

    CPC分类号: C07F17/00

    摘要: This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

    摘要翻译: 本发明涉及由式(Cp(R')x M(H)zy)表示的有机金属前体化合物, 生产有机金属前体化合物的方法,以及通过有机金属前体化合物的热或等离子体增强分离来沉积金属和/或金属碳化物层例如Ta金属和/或TaC层的方法,例如通过CVD 或ALD技术。 金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

    Organometallic compounds, processes for the preparation thereof and methods of use thereof
    3.
    发明申请
    Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
    有机金属化合物,其制备方法及其使用方法

    公开(公告)号:US20080081127A1

    公开(公告)日:2008-04-03

    申请号:US11900382

    申请日:2007-09-11

    IPC分类号: C07F11/00 C23C16/00

    CPC分类号: C07F17/00

    摘要: This invention relates to organometallic compounds represented by the formula (L1)yM(L2)z-y wherein M is a Group 5 metal or a Group 6 metal, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0.; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer, e.g., a tungsten, tungsten nitride, tungsten carbide, or tungsten carbonitride layer, on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

    摘要翻译: 本发明涉及由下式(L 1/2)M(L 2)z y表示的有机金属化合物,其中 M是第5族金属或第6族金属,L 1是取代或未取代的阴离子6电子给体配体,L 2相同或不同,为(i 取代或未取代的阴离子2电子供体配体,(ii)取代或未取代的阳离子2电子给体配体,或(iii)取代或未取代的中性2电子供体配体; y是1的整数,z是M的化合价; 并且其中M的氧化数和L 1和L 2的电荷之和等于0。 一种生产有机金属化合物的方法; 以及用于通过有机金属前体化合物的热或等离子体增强的解离在衬底上沉积金属和/或金属碳化物/氮化物层(例如钨,氮化钨,碳化钨或碳氮化钨)的方法,例如, 通过CVD或ALD技术。 金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

    Organoaluminum precursor compounds
    6.
    发明申请
    Organoaluminum precursor compounds 失效
    有机铝前体化合物

    公开(公告)号:US20060257567A1

    公开(公告)日:2006-11-16

    申请号:US11395142

    申请日:2006-04-03

    IPC分类号: C07F5/06

    摘要: This invention relates to organoaluminum precursor compounds represented by the formula: wherein R1, R2, R3 and R4 are the same or different and each represents hydrogen or an alkyl group having from 1 to about 3 carbon atoms, and R5 represents an alkyl group having from 1 to about 3 carbon atoms. This invention also relates to processes for producing the organoaluminum precursor compounds and a method for producing a film or coating from the organoaluminum precursor compounds.

    摘要翻译: 本发明涉及由下式表示的有机铝前体化合物:其中R 1,R 2,R 3和R 4, SUB>相同或不同,各自表示氢或具有1至约3个碳原子的烷基,R 5表示具有1至约3个碳原子的烷基。 本发明还涉及生产有机铝前体化合物的方法和由有机铝前体化合物制备薄膜或涂层的方法。

    Apparatus and method for delivering vapor phase reagent to a deposition chamber
    8.
    发明申请
    Apparatus and method for delivering vapor phase reagent to a deposition chamber 审中-公开
    将蒸气相试剂输送到沉积室的装置和方法

    公开(公告)号:US20060133955A1

    公开(公告)日:2006-06-22

    申请号:US11013434

    申请日:2004-12-17

    申请人: David Peters

    发明人: David Peters

    IPC分类号: B01L3/00

    CPC分类号: C23C16/4481

    摘要: This invention relates to a vapor phase reagent dispensing apparatus or assembly having a liquid reagent level sensor for sensing liquid reagent level in the apparatus interior volume and a temperature sensor for sensing temperature of the liquid reagent in the apparatus interior volume. The floor of the apparatus has a cavity therein extending downwardly from the surface of the floor, and the lower ends of the liquid reagent level sensor and temperature sensor are positioned in the cavity. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices, and achieves a high level of withdrawal of the liquid reagent from the vessel.

    摘要翻译: 本发明涉及一种气相试剂分配装置或组件,其具有用于检测装置内部体积中的液体试剂水平的液体试剂液位传感器和用于检测装置内部体积中液体试剂温度的温度传感器。 该装置的底板具有从地板表面向下延伸的空腔,并且液体试剂液位传感器和温度传感器的下端位于空腔中。 分注装置可以用于分配诸如用于在半导体材料和装置的制造中沉积材料的前体的试剂,并且实现液体试剂从容器的高水平抽出。

    Indirect customer identification system and method
    9.
    发明申请
    Indirect customer identification system and method 有权
    间接客户识别系统和方法

    公开(公告)号:US20060065716A1

    公开(公告)日:2006-03-30

    申请号:US11215693

    申请日:2005-08-30

    申请人: David Peters

    发明人: David Peters

    IPC分类号: G06K5/00

    摘要: A database system and method is presented that updates a retail transaction database for each transaction by extracting a name from a payment mechanism. Associations already made between the customer records, the transactions database, and the payment account database are used in conjunction with the extracted name to create additional associations between customers and transactions and between customers and payment accounts. In addition, new customer records can be created by searching demographic databases using the reverse append name and data associated with the transaction already in the database.

    摘要翻译: 提出了一种数据库系统和方法,其通过从支付机制提取名称来更新每个事务的零售交易数据库。 客户记录,交易数据库和支付帐户数据库之间已经建立的关联与提取的名称结合使用,以在客户和交易之间以及客户和付款帐户之间创建额外的关联。 此外,可以通过使用反向附加名称和与数据库中已有的事务关联的数据来搜索人口统计数据库来创建新的客户记录。

    Underfill injection mold
    10.
    发明申请
    Underfill injection mold 审中-公开
    底部注塑模具

    公开(公告)号:US20060046321A1

    公开(公告)日:2006-03-02

    申请号:US10928779

    申请日:2004-08-27

    申请人: David Peters

    发明人: David Peters

    IPC分类号: H01L21/66

    摘要: An underfill injection mold includes an inner surface defining a cavity to receive injected underfill substantially between a first substrate and a second substrate. The cavity includes convex, curvilinear sidewalls to define a concave, curvilinear underfill fillet of the injected underfill. In an example, dimensions of the inner surface that define the underfill fillet are based upon a finite element analysis of the underfill.

    摘要翻译: 底部注射模具包括限定腔体的内表面,以基本上在第一基底和第二基底之间接收注入的底部填充物。 空腔包括凸形的曲线侧壁,以限定注入的底部填充物的凹形,曲线的底部填充圆角。 在一个例子中,定义底部填充圆角的内表面的尺寸是基于底部填充物的有限元分析。