公开(公告)号：US20070075427A1

公开(公告)日：2007-04-05

申请号：US11240005

申请日：2005-09-30

申请人： Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez ,  Kevin O'Brien ,  Steven Johnston ,  John Peck ,  David Thompson ,  David Peters

发明人： Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez ,  Kevin O'Brien ,  Steven Johnston ,  John Peck ,  David Thompson ,  David Peters

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L23/53238 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

摘要翻译： 形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。 将基板放置在反应室内; 并加热。 然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂 并且等离子体在基板表面反应形成金属碳化物层。 可以重复和改变工艺循环以形成渐变的金属碳化物层。

公开(公告)号：US20060223300A1

公开(公告)日：2006-10-05

申请号：US11096860

申请日：2005-03-31

申请人： Harsono Simka ,  Juan Dominguez ,  Steven Johnston ,  Adrien Lavoie ,  Kevin O'Brien

发明人： Harsono Simka ,  Juan Dominguez ,  Steven Johnston ,  Adrien Lavoie ,  Kevin O'Brien

IPC分类号： H01L21/4763

CPC分类号： H01L21/28556 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76873

摘要： Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.

摘要翻译： 在此描述利用有机金属前体形成薄膜的化学相沉积方法。 有机金属前体可以包括单个金属中心或多个金属中心。 化学相沉积可以是化学气相沉积（CVD），原子层沉积（ALD）或混合CVD和ALD。 这些化学相沉积方法与有机金属前体的使用允许膜在宽度小于100nm，更特别地小于50nm的开口内的共形沉积，以形成薄膜，例如阻挡层，种子层和粘附层 。

公开(公告)号：US07220671B2

公开(公告)日：2007-05-22

申请号：US11096860

申请日：2005-03-31

申请人： Harsono Simka ,  Juan Dominguez ,  Steven Johnston ,  Adrien Lavoie ,  Kevin O'Brien

发明人： Harsono Simka ,  Juan Dominguez ,  Steven Johnston ,  Adrien Lavoie ,  Kevin O'Brien

IPC分类号： H01L21/44

CPC分类号： H01L21/28556 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76873

摘要： Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.

摘要翻译： 在此描述利用有机金属前体形成薄膜的化学相沉积方法。 有机金属前体可以包括单个金属中心或多个金属中心。 化学相沉积可以是化学气相沉积（CVD），原子层沉积（ALD）或混合CVD和ALD。 这些化学相沉积方法与有机金属前体的使用允许膜在宽度小于100nm，更特别地小于50nm的开口内的共形沉积，以形成薄膜，例如阻挡层，种子层和粘附层 。

公开(公告)号：US20070148952A1

公开(公告)日：2007-06-28

申请号：US11318137

申请日：2005-12-23

申请人： Kevin O'Brien ,  Chin-Chang Cheng ,  Ramanan Chebiam ,  Valery Dubin ,  Sridhar Balakrishnan

发明人： Kevin O'Brien ,  Chin-Chang Cheng ,  Ramanan Chebiam ,  Valery Dubin ,  Sridhar Balakrishnan

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  B82Y30/00 ,  H01L21/288 ,  H01L21/76874

摘要： Methods of fabricating interconnect structures utilizing barrier material layers formed with an electroless deposition technique utilizing a coupling agent complexed with a catalytic metal and structures formed thereby. The fabrication fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, bonding the coupling agent to the dielectric material within the opening, and electrolessly depositing the barrier material layer, wherein the electrolessly deposited barrier material layer material adheres to the catalytic metal of the coupling agent.

摘要翻译： 使用利用与催化金属复合的偶联剂和由此形成的结构的化学沉积技术形成的阻挡材料层来制造互连结构的方法。 该制造基本上包括提供介电材料层，其具有从其第一表面延伸到电介质材料中的开口，将该耦合剂粘合到该开口内的电介质材料，以及无电沉积阻挡材料层，其中该无电沉积阻挡材料层 材料粘附到偶联剂的催化金属上。

公开(公告)号：US20050146048A1

公开(公告)日：2005-07-07

申请号：US10748359

申请日：2003-12-30

申请人： Valery Dubin ,  Peter Moon ,  Kevin O'Brien

发明人： Valery Dubin ,  Peter Moon ,  Kevin O'Brien

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76862 ,  H01L21/76865

摘要： A method for making a semiconductor device is provided including providing a substrate, and forming a dielectric layer over the substrate. The method also includes defining a damascene interconnect structure in the dielectric layer and forming a barrier layer over the dielectric layer and within the damascene interconnect structure where the barrier layer is tapered within the damascene interconnect structure.

摘要翻译： 提供一种制造半导体器件的方法，包括提供衬底，并在衬底上形成电介质层。 该方法还包括在电介质层中限定镶嵌互连结构，并在电介质层之上和镶嵌互连结构内形成阻挡层，其中阻挡层在镶嵌互连结构内呈锥形。

公开(公告)号：US20050181631A1

公开(公告)日：2005-08-18

申请号：US11101688

申请日：2005-04-08

申请人： Steven Johnston ,  Kevin O'Brien

发明人： Steven Johnston ,  Kevin O'Brien

IPC分类号： H01L21/033 ,  H01L21/316 ,  H01L21/768 ,  H01L21/469

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02351 ,  H01L21/0337 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832

摘要： An interlayer dielectric may be exposed to a gas cluster ion beam to densify an upper layer of the interlayer dielectric. As a result, the upper layer of the interlayer dielectric may be densified without separate deposition steps and without the need for etch stops that may adversely affect the capacitance of the overall structure.

摘要翻译： 可以将层间电介质暴露于气体簇离子束以致致密层间电介质的上层。 结果，层间电介质的上层可以在没有单独的沉积步骤的情况下被致密化，并且不需要可能不利地影响整个结构的电容的蚀刻停止。

公开(公告)号：US20070004230A1

公开(公告)日：2007-01-04

申请号：US11173858

申请日：2005-06-30

申请人： Steven Johnston ,  Kevin O'Brien ,  Sridhar Balakrishnan

发明人： Steven Johnston ,  Kevin O'Brien ,  Sridhar Balakrishnan

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02074 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/3141 ,  H01L21/76807

摘要： A method for forming a semiconductor device is disclosed wherein atomic layer deposition (ALD) precursor species and/or by-product absorbed by an ILD are outgassed and/or neutralized prior to subsequently patterning the semiconductor device, thereby improving the ability to accurately define subsequently formed interconnect structures in the ILD.

摘要翻译： 公开了一种用于形成半导体器件的方法，其中在随后对半导体器件进行图案化之前，由ILD吸收的原子层沉积（ALD）前体物质和/或副产物被除气和/或中和，从而提高随后对 在ILD中形成互连结构。

公开(公告)号：US10664576B2

公开(公告)日：2020-05-26

申请号：US15657201

申请日：2017-07-23

申请人： Darrin Edelman ,  Austin O'Brion ,  Kevin O'Brien

发明人： Darrin Edelman ,  Austin O'Brion ,  Kevin O'Brien

IPC分类号： G06F21/31 ,  G06F21/32 ,  G06F21/34 ,  G06Q20/40 ,  G06F21/33 ,  G06F21/45 ,  G06F3/0481

摘要： Provided are computer-implemented methods and systems used in assuring a person's identity that include the steps of receiving from the person one or more identifying statements and receiving from the person authorization to access one or more identity sources on which the person is registered. Data is then extracted from one or more of the identity sources to corroborate the one or more identifying statements, and the data aggregated to provide first and second scores, the first score representing factors that tend to affirm the person's identifying statements and the second score representing factors that tend to disaffirm the person's identifying statements. Optionally, the scores are displayed in a graphical user interface.

公开(公告)号：US20090321935A1

公开(公告)日：2009-12-31

申请号：US12215987

申请日：2008-06-30

申请人： Kevin O'Brien ,  Florian Gstrein ,  Sridhar Balakrishnan

发明人： Kevin O'Brien ,  Florian Gstrein ,  Sridhar Balakrishnan

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53223 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a doping material on an overburden region of a conductive structure, diffusing a portion of the doping material into a portion of the conductive structure, and then removing the overburden region.

摘要翻译： 描述了形成微电子结构的方法和相关结构。 这些方法可以包括在导电结构的覆盖层区域上形成掺杂材料，将掺杂材料的一部分扩散到导电结构的一部分中，然后去除覆盖层区域。

公开(公告)号：US20090278346A1

公开(公告)日：2009-11-12

申请号：US12116473

申请日：2008-05-07

申请人： Kevin O'Brien

发明人： Kevin O'Brien

IPC分类号： F16L55/00

CPC分类号： F16L37/091

摘要： A connector comprises a body having a passage therethrough for fluid flow and a female portion for receiving by a slip fit a tubular member. Gripping means are placed in the passage in the female portion for gripping the tubular member and is configured for preventing the tubular member from rotating. A retainer retains the gripping means in place and a seal prevents leakage.

摘要翻译： 连接器包括具有用于流体流动的通道的主体和用于通过滑动配合接收管状构件的阴部分。 夹持装置放置在阴部分中的通道中，用于夹持管状构件，并且构造成用于防止管状构件旋转。 保持器将夹持装置保持在适当位置，并且密封件防止泄漏。