Amine-free deposition of metal-nitride films
    1.
    发明申请
    Amine-free deposition of metal-nitride films 有权
    无氮化物沉积金属氮化物膜

    公开(公告)号:US20070075427A1

    公开(公告)日:2007-04-05

    申请号:US11240005

    申请日:2005-09-30

    IPC分类号: H01L29/40 H01L21/44

    摘要: A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

    摘要翻译: 形成金属碳化物层的方法开始于提供衬底,有机金属前体材料,至少一种掺杂剂如氮气,以及诸如氢等离子体的等离子体。 将基板放置在反应室内; 并加热。 然后进行处理循环,其中工艺循环包括将有机金属前体材料脉冲到反应室中,将掺杂剂脉冲到反应室中,并将等离子体脉冲到反应室中,使得有机金属前体材料,掺杂剂 并且等离子体在基板表面反应形成金属碳化物层。 可以重复和改变工艺循环以形成渐变的金属碳化物层。

    Alloyed underlayer for microelectronic interconnects
    5.
    发明申请
    Alloyed underlayer for microelectronic interconnects 有权
    用于微电子互连的合金底层

    公开(公告)号:US20060118968A1

    公开(公告)日:2006-06-08

    申请号:US11006844

    申请日:2004-12-07

    摘要: Apparatus and methods of fabricating a microelectronic interconnect having an underlayer which acts as both a barrier layer and a seed layer. The underlayer is formed by co-depositing a noble metal and a barrier material, such as a refractory metal, or formed during thermal post-treatment, such as thermal annealing, conducted after two separately depositing the noble metal and the barrier material, which are substantially soluble in one another. The use of a barrier material within the underlayer prevents the electromigration of the interconnect conductive material and the use of noble material within the underlayer allows for the direct plating of the interconnect conductive material.

    摘要翻译: 制造具有作为阻挡层和种子层两者的底层的微电子互连的装置和方法。 底层是通过共沉积贵金属和诸如难熔金属的阻挡材料形成的,或者在热后处理之后形成,例如热退火,在两个分开沉积贵金属和阻挡材料之后进行 彼此基本溶解。 在底层内使用阻挡材料防止互连导电材料的电迁移,并且在底层内使用贵金属允许互连导电材料的直接电镀。

    Uniformity in batch spray processing using independent cassette rotation
    10.
    发明申请
    Uniformity in batch spray processing using independent cassette rotation 审中-公开
    使用独立的盒式磁带旋转进行批量喷雾处理的均匀性

    公开(公告)号:US20060131276A1

    公开(公告)日:2006-06-22

    申请号:US11015069

    申请日:2004-12-17

    IPC分类号: C03C15/00 C23F1/00 H01L21/306

    CPC分类号: H01L21/67051

    摘要: A method for performing a batch spray comprises providing a substrate mounted upon a turntable, rotating the turntable to revolve the substrate around a center axis of the turntable, rotating the substrate independently of the turntable, wherein the rotating of the substrate occurs simultaneously with the rotating of the turntable, and spraying a chemical onto the substrate from at least one fixed location. Rotating the substrate independently of the turntable allows the entire circumference of the substrate to be exposed to the chemical spray. In one implementation, the substrate may be loaded into a process cassette, the process cassette may be mounted on the turntable, and the process cassette may rotate independently of the turntable while the turntable is rotating.

    摘要翻译: 执行批量喷雾的方法包括提供安装在转盘上的基板,旋转转台以围绕转台的中心轴线旋转基板,独立于转台旋转基板,其中基板的旋转与旋转 的转盘,并且从至少一个固定位置将化学品喷涂到基底上。 独立于转台旋转基板允许基板的整个周边暴露于化学喷雾。 在一个实施方案中,基板可以被装载到处理盒中,处理盒可以安装在转台上,并且处理盒可以在转盘旋转的同时独立于转台旋转。