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271 条记录 (耗时 0.038 秒)

    Amine-free deposition of metal-nitride films
    1.
    发明申请
    Amine-free deposition of metal-nitride films 有权
    无氮化物沉积金属氮化物膜

    公开(公告)号：US20070075427A1

    公开(公告)日：2007-04-05

    申请号：US11240005

    申请日：2005-09-30

    申请人： Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez ,  Kevin O'Brien ,  Steven Johnston ,  John Peck ,  David Thompson ,  David Peters

    发明人： Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez ,  Kevin O'Brien ,  Steven Johnston ,  John Peck ,  David Thompson ,  David Peters

    IPC分类号： H01L29/40 ,  H01L21/44

    CPC分类号： H01L23/53238 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

    摘要翻译： 形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。 将基板放置在反应室内; 并加热。 然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂 并且等离子体在基板表面反应形成金属碳化物层。 可以重复和改变工艺循环以形成渐变的金属碳化物层。

    Direct tailoring of the composition and density of ALD films
    4.
    发明申请
    Direct tailoring of the composition and density of ALD films 失效
    直接定制ALD膜的组成和密度

    公开(公告)号：US20070099420A1

    公开(公告)日：2007-05-03

    申请号：US11266131

    申请日：2005-11-02

    申请人： Juan Dominguez ,  Adrien Lavoie ,  Harsono Simka ,  John Plombon ,  David Thompson ,  John Peck

    发明人： Juan Dominguez ,  Adrien Lavoie ,  Harsono Simka ,  John Plombon ,  David Thompson ,  John Peck

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28562 ,  C23C16/045 ,  C23C16/45525 ,  C23C16/45529 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864

    摘要： A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.

    摘要翻译： 一种方法，包括在底物存在下根据第一组条件引入有机金属前体; 在基材存在下根据不同的第二组条件引入有机金属前体; 并且根据原子层沉积工艺在基底上形成包含有机金属前体的部分的层。 一种包括计算设备的系统，包括微处理器，所述微处理器耦合到印刷电路板，所述微处理器包括具有多个电路器件的衬底，所述电路器件具有通过形成在多个电介质层中的互连结构而形成于所述多个电路器件的电连接 形成在所述基板上，并且所述多个互连结构中的每一个通过根据原子层沉积工艺形成的阻挡层与所述多个电介质层分离。

    Organometallic compounds, processes for the preparation thereof and methods of use thereof
    5.
    发明申请
    Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
    有机金属化合物，其制备方法及其使用方法

    公开(公告)号：US20070069177A1

    公开(公告)日：2007-03-29

    申请号：US11501075

    申请日：2006-08-09

    申请人： David Peters ,  David Thompson

    发明人： David Peters ,  David Thompson

    IPC分类号： H01M4/88 ,  H01B1/12 ,  H01B1/00

    CPC分类号： C07F17/00

    摘要： This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

    摘要翻译： 本发明涉及由式（Cp（R'）x M（H）zy）表示的有机金属前体化合物， 生产有机金属前体化合物的方法，以及通过有机金属前体化合物的热或等离子体增强分离来沉积金属和/或金属碳化物层例如Ta金属和/或TaC层的方法，例如通过CVD 或ALD技术。 金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

    Organometallic compounds, processes for the preparation thereof and methods of use thereof
    6.
    发明申请
    Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
    有机金属化合物，其制备方法及其使用方法

    公开(公告)号：US20080081127A1

    公开(公告)日：2008-04-03

    申请号：US11900382

    申请日：2007-09-11

    申请人： David Thompson ,  David Peters ,  Scott Meiere

    发明人： David Thompson ,  David Peters ,  Scott Meiere

    IPC分类号： C07F11/00 ,  C23C16/00

    CPC分类号： C07F17/00

    摘要： This invention relates to organometallic compounds represented by the formula (L1)yM(L2)z-y wherein M is a Group 5 metal or a Group 6 metal, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0.; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer, e.g., a tungsten, tungsten nitride, tungsten carbide, or tungsten carbonitride layer, on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

    摘要翻译： 本发明涉及由下式（L 1/2）M（L 2）z y表示的有机金属化合物，其中 M是第5族金属或第6族金属，L 1是取代或未取代的阴离子6电子给体配体，L 2相同或不同，为（i 取代或未取代的阴离子2电子供体配体，（ii）取代或未取代的阳离子2电子给体配体，或（iii）取代或未取代的中性2电子供体配体; y是1的整数，z是M的化合价; 并且其中M的氧化数和L 1和L 2的电荷之和等于0。 一种生产有机金属化合物的方法; 以及用于通过有机金属前体化合物的热或等离子体增强的解离在衬底上沉积金属和/或金属碳化物/氮化物层（例如钨，氮化钨，碳化钨或碳氮化钨）的方法，例如， 通过CVD或ALD技术。 金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

    Instrumented foam pig
    7.
    发明授权
    Instrumented foam pig 有权
    仪器型泡沫猪

    公开(公告)号：US08925400B2

    公开(公告)日：2015-01-06

    申请号：US13512685

    申请日：2010-11-30

    申请人： Rennie Hill ,  David Thompson ,  Peter Ward

    发明人： Rennie Hill ,  David Thompson ,  Peter Ward

    IPC分类号： F16L55/26 ,  F16L55/28 ,  F16L55/40

    CPC分类号： F16L55/28 ,  F16L55/40

    摘要： An instrumented pig comprises a foam body having an outer surface and an inner cavity in which, in use, is located a sealed unit housing at least a part of a parameter measurement apparatus configured to measure at least one parameter from which the extent of deflection of the outer surface of the foam body may be derived, the sealed unit including at least one sensor configured to generate an output signal representative of the at least one measured parameter.

    摘要翻译： 仪表式猪包括具有外表面和内腔的泡沫体，在使用中，所述发泡体位于密封单元中，所述密封单元容纳参数测量装置的至少一部分，所述参数测量装置被配置成测量至少一个参数， 可以导出泡沫体的外表面，密封单元包括至少一个被配置为产生表示至少一个测量参数的输出信号的传感器。

    Method For Producing Nickel-Containing Films
    10.
    发明申请
    Method For Producing Nickel-Containing Films 有权
    生产含镍薄膜的方法

    公开(公告)号：US20140023785A1

    公开(公告)日：2014-01-23

    申请号：US13555832

    申请日：2012-07-23

    申请人： David Knapp ,  David Thompson

    发明人： David Knapp ,  David Thompson

    IPC分类号： C23C16/18

    CPC分类号： C23C16/18 ,  C07F17/00

    摘要： Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented by formula (I): wherein R1 is t-butyl and each R2 is each independently any C1-C3 alkyl group; and exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface.

    摘要翻译： 提供的是使用其沉积基本上由镍组成的膜的前体和方法。 某些方法包括提供基底表面; 将基材表面暴露于包含具有由式（I）表示的结构的前体的蒸气：其中R 1是叔丁基，每个R 2各自独立地是任何C 1 -C 3烷基; 并将衬底暴露于还原气体，以在衬底表面上提供基本上由镍组成的膜。