公开(公告)号：US20070075427A1

公开(公告)日：2007-04-05

申请号：US11240005

申请日：2005-09-30

申请人： Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez ,  Kevin O'Brien ,  Steven Johnston ,  John Peck ,  David Thompson ,  David Peters

发明人： Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez ,  Kevin O'Brien ,  Steven Johnston ,  John Peck ,  David Thompson ,  David Peters

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L23/53238 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

摘要翻译： 形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。 将基板放置在反应室内; 并加热。 然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂 并且等离子体在基板表面反应形成金属碳化物层。 可以重复和改变工艺循环以形成渐变的金属碳化物层。

公开(公告)号：US20070155158A1

公开(公告)日：2007-07-05

申请号：US11325774

申请日：2005-12-30

申请人： Florian Gstrein ,  Valery Dubin ,  Juan Dominguez ,  Adrien Lavoie

发明人： Florian Gstrein ,  Valery Dubin ,  Juan Dominguez ,  Adrien Lavoie

IPC分类号： H01L21/4763

CPC分类号： H01L21/76877 ,  H01L21/76838 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/75 ,  H01L2924/00

摘要： A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles.

摘要翻译： 一种包括在牺牲衬底上形成单层碳纳米管的互连的方法; 将所述互连件从所述牺牲衬底转移到电路衬底; 以及将所述互连件耦合到所述电路基板上的接触点。 一种方法，包括在第一接触点和第二接触点之间的电路基板上形成纳米管束，所述纳米管限定通过其的腔; 用导电材料填充纳米管束管腔长度的一部分; 以及将所述导电材料耦合到所述第二接触点。 一种包括计算设备的系统，包括微处理器，微处理器耦合到印刷电路板，微处理器包括具有多个电路器件的衬底，该电路器件具有通过包括碳纳米管束的互连结构与多个电路器件形成的电连接。

公开(公告)号：US20060281306A1

公开(公告)日：2006-12-14

申请号：US11148614

申请日：2005-06-08

申请人： Florian Gstrein ,  Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez

发明人： Florian Gstrein ,  Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez

IPC分类号： H01L21/44

CPC分类号： H01L23/53276 ,  H01L21/76877 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming an interconnect on a semiconductor substrate comprises providing at least one carbon nanotube within a trench, etching at least one portion of the carbon nanotube to create an opening, conformally depositing a metal layer on the carbon nanotube through the opening, and forming a metallized contact at the opening that is substantially coupled to the carbon nanotube. The metal layer may be conformally deposited on the carbon nanotube using an atomic layer deposition process or an electroless plating process. Multiple metal layers may be deposited to substantially fill voids within the carbon nanotube. The electroless plating process may use a supercritical liquid as the medium for the plating solution. The wetting behavior of the carbon nanotube may be modified prior to the electroless plating process to increase the hydrophilicity of the carbon nanotube.

摘要翻译： 一种用于在半导体衬底上形成互连的方法包括在沟槽内提供至少一个碳纳米管，蚀刻碳纳米管的至少一部分以形成开口，通过开口在碳纳米管上共形沉积金属层，并形成 在开口处的金属化接触基本上与碳纳米管耦合。 可以使用原子层沉积工艺或无电镀工艺将金属层共形沉积在碳纳米管上。 可以沉积多个金属层以基本上填充碳纳米管内的空隙。 化学镀处理可以使用超临界液体作为电镀溶液的介质。 可以在化学镀处理之前改变碳纳米管的润湿性能，以增加碳纳米管的亲水性。

公开(公告)号：US20070105375A1

公开(公告)日：2007-05-10

申请号：US11269402

申请日：2005-11-07

申请人： Adrien Lavoie ,  Arnel Fajardo ,  Valery Dubin

发明人： Adrien Lavoie ,  Arnel Fajardo ,  Valery Dubin

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76873 ,  H01L21/76876

摘要： A method of forming a copper interconnect on a substrate comprises providing a substrate that includes a dielectric layer and a trench etched into the dielectric layer, depositing a barrier layer within the trench, using a palladium immobilization process to form a metal catalyst layer on the barrier layer, activating the metal catalyst layer, and using a vapor deposition process to deposit a copper seed layer onto the metal catalyst layer. The vapor deposition process may include PVD, CVD, or ALD. An electroplating process or an electroless plating process may then be used to deposit a bulk copper layer onto the copper seed layer to fill the trench. A planarization process may follow to form the final interconnect structure.

摘要翻译： 在衬底上形成铜互连的方法包括提供衬底，该衬底包括介电层和蚀刻到电介质层中的沟槽，使用钯固定法在阻挡层中沉积势垒层，以在阻挡层上形成金属催化剂层 层，激活金属催化剂层，并使用气相沉积工艺将铜籽晶层沉积到金属催化剂层上。 气相沉积工艺可以包括PVD，CVD或ALD。 然后可以使用电镀工艺或无电电镀工艺将块状铜层沉积到铜种子层上以填充沟槽。 可以进行平面化处理以形成最终的互连结构。

公开(公告)号：US20050147746A1

公开(公告)日：2005-07-07

申请号：US10749958

申请日：2003-12-30

申请人： Valery Dubin ,  Juan Dominguez ,  Chin-Chang Cheng

发明人： Valery Dubin ,  Juan Dominguez ,  Chin-Chang Cheng

IPC分类号： B05C3/00 ,  B05D1/12 ,  C01B31/02 ,  C23C18/16

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/06 ,  C23C18/1646 ,  C23C18/1666 ,  C23C18/1669 ,  C23C18/1882 ,  Y10S977/742 ,  Y10T428/2982

摘要： An apparatus and method for forming catalyst particles to grow nanotubes is disclosed. In addition, an apparatus and method for forming nanotubes using the catalytic particles is also disclosed. The particles formed may have different diameters depending upon how they are formed. Once formed, the particles are deposited on a substrate. Once deposited, the mobility of the particles is restricted and nanotubes and/or nanotube portions are grown on the particles. Nanotube portions having different diameters may be formed and the portions may be connected to form nanotubes with different diameters along the length of the nanotube.

摘要翻译： 公开了一种用于形成催化剂颗粒以生长纳米管的装置和方法。 此外，还公开了使用催化剂颗粒形成纳米管的装置和方法。 形成的颗粒可以具有不同的直径，这取决于它们的形成方式。 一旦形成，颗粒沉积在基底上。 一旦沉积，颗粒的迁移率受到限制，纳米管和/或纳米管部分在颗粒上生长。 可以形成具有不同直径的纳米管部分，并且可以将部分连接以形成沿着纳米管的长度具有不同直径的纳米管。

公开(公告)号：US20070196575A1

公开(公告)日：2007-08-23

申请号：US11359165

申请日：2006-02-21

申请人： Juan Dominguez ,  Valery Dubin ,  Florian Gstrein ,  Michael Goldstein

发明人： Juan Dominguez ,  Valery Dubin ,  Florian Gstrein ,  Michael Goldstein

IPC分类号： C23C16/00 ,  C01B31/02

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  Y10S977/742

摘要： Embodiments of the present invention provide methods for the fabrication of carbon nanotubes using composite metal films. A composite metal film is fabricated to provide uniform catalytic sites to facilitate the uniform growth of carbon nanotubes. Further embodiments provide embedded nanoparticles for carbon nanotube fabrication. Embodiments of the invention are capable of maintaining the integrity of the catalytic sites at temperatures used in carbon nanotube fabrication processes, 600 to 1100° C.

摘要翻译： 本发明的实施例提供了使用复合金属膜制造碳纳米管的方法。 制造复合金属膜以提供均匀的催化位点以促进碳纳米管的均匀生长。 另外的实施方案提供用于碳纳米管制造的嵌入式纳米颗粒。 本发明的实施方案能够在碳纳米管制造工艺中使用的温度下维持催化部位的完整性，其温度为600至1100℃

公开(公告)号：US20070148952A1

公开(公告)日：2007-06-28

申请号：US11318137

申请日：2005-12-23

申请人： Kevin O'Brien ,  Chin-Chang Cheng ,  Ramanan Chebiam ,  Valery Dubin ,  Sridhar Balakrishnan

发明人： Kevin O'Brien ,  Chin-Chang Cheng ,  Ramanan Chebiam ,  Valery Dubin ,  Sridhar Balakrishnan

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  B82Y30/00 ,  H01L21/288 ,  H01L21/76874

摘要： Methods of fabricating interconnect structures utilizing barrier material layers formed with an electroless deposition technique utilizing a coupling agent complexed with a catalytic metal and structures formed thereby. The fabrication fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, bonding the coupling agent to the dielectric material within the opening, and electrolessly depositing the barrier material layer, wherein the electrolessly deposited barrier material layer material adheres to the catalytic metal of the coupling agent.

摘要翻译： 使用利用与催化金属复合的偶联剂和由此形成的结构的化学沉积技术形成的阻挡材料层来制造互连结构的方法。 该制造基本上包括提供介电材料层，其具有从其第一表面延伸到电介质材料中的开口，将该耦合剂粘合到该开口内的电介质材料，以及无电沉积阻挡材料层，其中该无电沉积阻挡材料层 材料粘附到偶联剂的催化金属上。

公开(公告)号：US20050146048A1

公开(公告)日：2005-07-07

申请号：US10748359

申请日：2003-12-30

申请人： Valery Dubin ,  Peter Moon ,  Kevin O'Brien

发明人： Valery Dubin ,  Peter Moon ,  Kevin O'Brien

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76862 ,  H01L21/76865

摘要： A method for making a semiconductor device is provided including providing a substrate, and forming a dielectric layer over the substrate. The method also includes defining a damascene interconnect structure in the dielectric layer and forming a barrier layer over the dielectric layer and within the damascene interconnect structure where the barrier layer is tapered within the damascene interconnect structure.

摘要翻译： 提供一种制造半导体器件的方法，包括提供衬底，并在衬底上形成电介质层。 该方法还包括在电介质层中限定镶嵌互连结构，并在电介质层之上和镶嵌互连结构内形成阻挡层，其中阻挡层在镶嵌互连结构内呈锥形。

公开(公告)号：US20070298608A1

公开(公告)日：2007-12-27

申请号：US11897862

申请日：2007-08-31

申请人： Steven Johnston ,  Valery Dubin ,  Michael McSwiney ,  Peter Moon

发明人： Steven Johnston ,  Valery Dubin ,  Michael McSwiney ,  Peter Moon

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.

公开(公告)号：US09105628B1

公开(公告)日：2015-08-11

申请号：US13434688

申请日：2012-03-29

申请人： Valery Dubin

发明人： Valery Dubin

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L21/768 ,  H01L23/538

CPC分类号： H01L23/49827 ,  B81B7/007 ,  B81B2207/096 ,  H01L21/486 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5384 ,  H01L2224/02372 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08146 ,  H01L2224/08165 ,  H01L2224/08235 ,  H01L2224/13 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/1461 ,  H01L2924/00

摘要： Through substrate via (TSuV) structures and method of making the same are disclosed herein. In embodiments, TSuV structures are metal filled selectively to avoid forming significant metal overburden on non-via surfaces of the substrate. In certain embodiments, post-fill metal removal/planarization operations are eliminated for reduced process complexity and manufacturing cost. In embodiments, selective metal fill entails selective electroless or electrolytic deposition. Both front side and back side selective deposition methods are described along with features of through substrate via structures made with such methods.

摘要翻译： 通过衬底通孔（TSuV）结构及其制备方法在此公开。 在实施例中，TSuV结构被选择性地金属填充以避免在衬底的非通孔表面上形成显着的金属覆盖层。 在某些实施例中，消除后填充金属去除/平面化操作以降低工艺复杂性和制造成本。 在实施例中，选择性金属填充需要选择性化学镀或电解沉积。 还描述了前侧和后侧选择性沉积方法以及通过这种方法制成的通过基底通孔结构的特征。