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公开(公告)号：US20210027998A1
公开(公告)日：2021-01-28
申请号：US16939548
申请日：2020-07-27
Applicant: Advanced Energy Industries, Inc.
Abstract: Systems and methods for are disclosed. One method includes providing at least a first electrode, a second electrode, and a third electrode and using each of at least two, separate and different, target materials in connection with the three electrodes to enable sputtering. The method also includes applying a first voltage at the first electrode that alternates between positive and negative relative to the second electrode during each of multiple cycles and applying a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles.
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公开(公告)号：US20170025257A1
公开(公告)日：2017-01-26
申请号：US15095745
申请日：2016-04-11
Applicant: Advanced Energy Industries, Inc.
Inventor： Hendrik Walde , Joshua Brian Pankratz , David Christie , Brian D. Kowal
IPC: H01J37/32 , H01J37/24 , H01J37/244
CPC classification number: H01J37/32944 , H01J37/24 , H01J37/244 , H01J2237/0206 , H01J2237/244 , H05H1/24 , H05H1/36 , H05H1/48 , H05H2001/3494
Abstract: Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.
Abstract translation: 公开了用于等离子体处理操作中的电弧处理的系统和方法。 该方法包括向第一电压极性的等离子体负载提供电源并为能量存储装置通电，因此当其被通电时，能量存储装置施加相反极性的电压，该极性电压的幅度至少与 第一电压极性。 当检测到电弧时，利用具有与第一电压极性相反的极性的反极性电压从能量存储装置向等离子体负载施加电力，对等离子体负载施加反极性电压降低等级 提供给等离子体负载的电流。
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公开(公告)号：US20170022604A1
公开(公告)日：2017-01-26
申请号：US14809084
申请日：2015-07-24
Applicant: Advanced Energy Industries, Inc.
Inventor： David Christie , Skip B. Larson
CPC classification number: H01J37/3476 , C23C14/3485 , C23C14/3492 , H01J37/3405 , H01J37/3438 , H01J37/3488
Abstract: A system and method for single magnetron sputtering are described. One example includes a system having a power supply, a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate. This example also has a datastore with uncoated anode characterization data and an anode sputtering adjustment system including an anode analysis component to generate a first health value. The first health value is indicative of whether the anode is coated with a dielectric material. This example also has an anode power controller to receive the first health value and provide an anode-energy-control signal to the pulse controller of the pulsed DC power supply to adjust a second anode sputtering energy relative to a first anode sputtering energy to eject at least a portion of the dielectric material from the anode.
Abstract translation: 描述了用于单磁控溅射的系统和方法。 一个实例包括具有电源的系统，包围衬底的等离子体室，阳极和用于在衬底上沉积薄膜材料的靶。 该示例还具有未涂覆的阳极表征数据的数据存储区和包括阳极分析组件以产生第一健康值的阳极溅射调整系统。 第一健康值表示阳极是否涂有电介质材料。 该示例还具有阳极功率控制器以接收第一健康值并且向脉冲DC电源的脉冲控制器提供阳极能量控制信号，以相对于第一阳极溅射能量调节第二阳极溅射能量以在 来自阳极的电介质材料的至少一部分。
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4.发明申请公开(公告)号：US20170271133A1
公开(公告)日：2017-09-21
申请号：US15608478
申请日：2017-05-30
Applicant: Advanced Energy Industries, Inc.
Inventor： David Christie
CPC classification number: H01J37/3405 , C23C14/0042 , C23C14/3464 , C23C14/3485 , C23C14/35 , C23C14/54 , H01J37/32027 , H01J37/32935 , H01J37/3299 , H01J37/3417 , H01J37/3438 , H01J37/3444 , H01J37/3464 , H01J37/3467 , H01J37/3479
Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.
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公开(公告)号：US09711335B2
公开(公告)日：2017-07-18
申请号：US14333407
申请日：2014-07-16
Applicant: Advanced Energy Industries, Inc.
Inventor： David Christie
CPC classification number: H01J37/3405 , C23C14/0042 , C23C14/3464 , C23C14/3485 , C23C14/35 , C23C14/54 , H01J37/32027 , H01J37/32935 , H01J37/3299 , H01J37/3417 , H01J37/3438 , H01J37/3444 , H01J37/3464 , H01J37/3467 , H01J37/3479
Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.
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Patent Agency Ranking
公开(公告)号：US09673028B2
公开(公告)日：2017-06-06
申请号：US15095745
申请日：2016-04-11
Applicant: Advanced Energy Industries, Inc.
Inventor： Hendrik Walde , Joshua Brian Pankratz , David Christie , Brian D. Kowal
CPC classification number: H01J37/32944 , H01J37/24 , H01J37/244 , H01J2237/0206 , H01J2237/244 , H05H1/24 , H05H1/36 , H05H1/48 , H05H2001/3494
Abstract: Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.
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7.发明申请SYSTEM AND METHOD FOR BALANCING CONSUMPTION OF TARGETS IN PULSED DUAL MAGNETRON SPUTTERING (DMS) PROCESSES 有权用于平衡脉冲双磁场溅射（DMS）过程中目标消耗的系统和方法公开(公告)号：US20150021167A1
公开(公告)日：2015-01-22
申请号：US14333407
申请日：2014-07-16
Applicant: Advanced Energy Industries, Inc.
Inventor： David Christie
CPC classification number: H01J37/3405 , C23C14/0042 , C23C14/3464 , C23C14/3485 , C23C14/35 , C23C14/54 , H01J37/32027 , H01J37/32935 , H01J37/3299 , H01J37/3417 , H01J37/3438 , H01J37/3444 , H01J37/3464 , H01J37/3467 , H01J37/3479
Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.
Abstract translation: 公开了溅射系统和方法。 该系统具有至少一个具有第一磁控管和第二磁控管的双重磁控管对，每个磁控管配置成支撑目标材料。 该系统还具有连接开关元件和电压传感器的直流电源的DMS组件。 DMS组件被配置为独立地控制对每个磁控管的功率的施加，并且提供每个磁控管处的电压的测量。 该系统还具有一个或多个致动器，其被配置为使用由DMS部件提供的测量来控制每个磁控管处的电压。 DMS组件和一个或多个致动器被配置为响应于每个磁控管处的电压的测量，通过控制施加到每个磁控管的功率和电压来平衡目标材料的消耗。
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公开(公告)号：US20140070730A1
公开(公告)日：2014-03-13
申请号：US14012847
申请日：2013-08-28
Applicant: Advanced Energy Industries, Inc.
Inventor： Hendrik Walde , Joshua Brian Pankratz , David Christie , Brian D. Kowal
IPC: H05H1/24
CPC classification number: H01J37/32944 , H01J37/24 , H01J37/244 , H01J2237/0206 , H01J2237/244 , H05H1/24 , H05H1/36 , H05H1/48 , H05H2001/3494
Abstract: Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.
Abstract translation: 公开了用于等离子体处理操作中的电弧处理的系统和方法。 该方法包括向第一电压极性的等离子体负载提供电源并为能量存储装置通电，因此当其被通电时，能量存储装置施加相反极性的电压，该极性电压的幅度至少与 第一电压极性。 当检测到电弧时，利用具有与第一电压极性相反的极性的反极性电压从能量存储装置向等离子体负载施加电力，对等离子体负载施加反极性电压降低等级 提供给等离子体负载的电流。
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公开(公告)号：US10373811B2
公开(公告)日：2019-08-06
申请号：US14809084
申请日：2015-07-24
Applicant: Advanced Energy Industries, Inc.
Inventor： David Christie , Skip B. Larson
Abstract: A system and method for single magnetron sputtering are described. One example includes a system having a power supply, a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate. This example also has a datastore with uncoated anode characterization data and an anode sputtering adjustment system including an anode analysis component to generate a first health value. The first health value is indicative of whether the anode is coated with a dielectric material. This example also has an anode power controller to receive the first health value and provide an anode-energy-control signal to the pulse controller of the pulsed DC power supply to adjust a second anode sputtering energy relative to a first anode sputtering energy to eject at least a portion of the dielectric material from the anode.
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10.发明授权公开(公告)号：US10332730B2
公开(公告)日：2019-06-25
申请号：US15608478
申请日：2017-05-30
Applicant: Advanced Energy Industries, Inc.
Inventor： David Christie
Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.
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