公开(公告)号：US20190074264A1

公开(公告)日：2019-03-07

申请号：US15698451

申请日：2017-09-07

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Bo-Syun CHEN ,  Tang-Yuan CHEN ,  Yu-Chang CHEN ,  Jin-Feng YANG ,  Chin-Li KAO ,  Meng-Kai SHIH

IPC: H01L25/065 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/13 ,  H01L23/3677 ,  H01L23/49811 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/16227 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/83192 ,  H01L2224/92225 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06537 ,  H01L2225/06558 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2224/81

Abstract: A semiconductor package structure includes a first substrate, at least one first semiconductor element and a second substrate. The first semiconductor element is attached to the first substrate. The second substrate defines a cavity and includes a plurality of thermal vias. One end of each of the thermal vias is exposed in the cavity, and the first semiconductor element is disposed within the cavity and thermally connected to the thermal vias.

公开(公告)号：US20190287947A1

公开(公告)日：2019-09-19

申请号：US16434008

申请日：2019-06-06

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Bo-Syun CHEN ,  Tang-Yuan CHEN ,  Yu-Chang CHEN ,  Jin-Feng YANG ,  Chin-Li KAO ,  Meng-Kai SHIH

IPC: H01L25/065 ,  H01L23/552 ,  H01L25/00 ,  H01L23/13 ,  H01L23/498 ,  H01L21/48 ,  H01L23/367 ,  H01L23/538

Abstract: A semiconductor package structure includes: (1) a first substrate; (2) at least one first semiconductor element attached to the first substrate; and (3) a second substrate including a plurality of thermal vias and a plurality of conductive vias, wherein one end of each of the thermal vias directly contacts the first semiconductor element.