公开(公告)号：US20210272866A1

公开(公告)日：2021-09-02

申请号：US17322767

申请日：2021-05-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ya-Yu HSIEH ,  Chin-Li KAO ,  Chung-Hsuan TSAI ,  Chia-Pin CHEN

IPC: H01L23/29 ,  H01L23/00 ,  H01L23/31 ,  H01L21/66

Abstract: The present disclosure provides a semiconductor package structure having a semiconductor die having an active surface, a conductive bump on the active surface, configured to electrically couple the semiconductor die to an external circuit, the conductive bump having a bump height, a dielectric encapsulating the semiconductor die and the conductive bump, and a plurality of fillers in the dielectric, each of the fillers comprising a diameter, wherein a maximum diameter of the fillers is smaller than the bump height.

公开(公告)号：US20210050273A1

公开(公告)日：2021-02-18

申请号：US16540837

申请日：2019-08-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ya-Yu HSIEH ,  Chin-Li KAO ,  Chung-Hsuan TSAI ,  Chia-Pin CHEN

IPC: H01L23/29 ,  H01L23/00 ,  H01L21/66 ,  H01L23/31

Abstract: The present disclosure provides a semiconductor package structure having a semiconductor die having an active surface, a conductive bump on the active surface, configured to electrically couple the semiconductor die to an external circuit, the conductive bump having a bump height, a dielectric encapsulating the semiconductor die and the conductive bump, and a plurality of fillers in the dielectric, each of the fillers comprising a diameter, wherein a maximum diameter of the fillers is smaller than the bump height.

公开(公告)号：US20190214323A1

公开(公告)日：2019-07-11

申请号：US16354049

申请日：2019-03-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ya-Yu HSIEH ,  Hong-Ping LIN ,  Dao-Long CHEN ,  Ping-Feng YANG ,  Meng-Kai SHIH

IPC: H01L23/29 ,  C08G59/42 ,  C08K5/5435 ,  C08K5/544 ,  C08K3/04 ,  C08K3/36 ,  H01L23/00 ,  C09D163/00

CPC classification number: H01L23/295 ,  C08G59/42 ,  C08K3/04 ,  C08K3/36 ,  C08K5/5435 ,  C08K5/544 ,  C09D163/00 ,  H01L21/563 ,  H01L23/296 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/01006 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor package includes a filler composition, wherein the filler composition includes particles each including both carbon and silica, wherein the filler composition is substantially devoid of alumina or silicon carbide, and the filler composition has a weight ratio of carbon to silica of at least greater than 1.0.

公开(公告)号：US20170141007A1

公开(公告)日：2017-05-18

申请号：US14943519

申请日：2015-11-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ya-Yu HSIEH ,  Hong-Ping LIN ,  Dao-Long CHEN ,  Ping-Feng YANG ,  Meng-Kai SHIH

IPC: H01L23/29 ,  H01L23/00 ,  C08K3/36 ,  C09D163/00 ,  C08K3/04

CPC classification number: H01L23/295 ,  C08G59/42 ,  C08K3/04 ,  C08K3/36 ,  C08K5/5435 ,  C08K5/544 ,  C09D163/00 ,  H01L21/563 ,  H01L23/296 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/01006 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: The present disclosure relates to a filler composition for a semiconductor package. The filler composition comprises carbon and silica.