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1.发明申请Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof 有权化学机械抛光（CMP）组合物用于浅沟槽隔离（STI）应用及其制备方法公开(公告)号：US20150247063A1
公开(公告)日：2015-09-03
申请号：US14709609
申请日：2015-05-12
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： C09G1/02 , H01L21/3105 , H01L21/762
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译： 应用用于从氧化铈颗粒中除去，还原或处理痕量金属污染物和较小的细小二氧化铈颗粒的方法，用于浅沟槽隔离（STI）工艺的氧化铈浆料或化学机械抛光（CMP）组合物。 使用经处理的化学机械抛光（CMP）组合物或通过使用经处理的氧化铈颗粒或经处理的氧化铈浆料制备的CMP抛光组合物来抛光至少包含用于STI的二氧化硅膜表面的衬底（浅沟槽隔离 ）处理和应用。 已经观察到由于痕量金属离子污染物的减少和在浅沟槽隔离（STI）CMP抛光中减少了非常小的细小的氧化铈颗粒）而减少的纳米尺寸颗粒相关缺陷。
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2.发明授权Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof 有权用于浅沟槽隔离（STI）应用的化学机械抛光（CMP）组合物及其制备方法公开(公告)号：US09062230B2
公开(公告)日：2015-06-23
申请号：US14482590
申请日：2014-09-10
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steve Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： B44C1/22 , C09G1/02 , C09K3/14 , H01L21/3105 , B24B1/00 , C01F17/00 , H01L21/762
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译： 应用用于从氧化铈颗粒中除去，还原或处理痕量金属污染物和较小的细小二氧化铈颗粒的方法，用于浅沟槽隔离（STI）工艺的氧化铈浆料或化学机械抛光（CMP）组合物。 使用经处理的化学机械抛光（CMP）组合物或通过使用经处理的氧化铈颗粒或经处理的氧化铈浆料制备的CMP抛光组合物用于抛光至少含有用于STI的二氧化硅膜表面的衬底（浅沟槽隔离 ）处理和应用。 已经观察到由于痕量金属离子污染物的减少和在浅沟槽隔离（STI）CMP抛光中减少了非常小的细小的氧化铈颗粒）而减少的纳米尺寸颗粒相关缺陷。
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3.发明授权Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof 有权用于浅沟槽隔离（STI）应用的化学机械抛光（CMP）组合物及其制备方法公开(公告)号：US08859428B2
公开(公告)日：2014-10-14
申请号：US14030657
申请日：2013-09-18
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steve Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： H01L21/302 , H01L21/3105 , C09G1/02 , C09K3/14 , C01F17/00
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译： 应用用于从氧化铈颗粒中除去，还原或处理痕量金属污染物和较小的细小二氧化铈颗粒的方法，用于浅沟槽隔离（STI）工艺的氧化铈浆料或化学机械抛光（CMP）组合物。 使用经处理的化学机械抛光（CMP）组合物或通过使用经处理的氧化铈颗粒或经处理的氧化铈浆料制备的CMP抛光组合物用于抛光至少含有用于STI的二氧化硅膜表面的衬底（浅沟槽隔离 ）处理和应用。 已经观察到由于痕量金属离子污染物的减少和在浅沟槽隔离（STI）CMP抛光中减少了非常小的细小的氧化铈颗粒）而减少的纳米尺寸颗粒相关缺陷。
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公开(公告)号：US10011741B2
公开(公告)日：2018-07-03
申请号：US15058268
申请日：2016-03-02
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： H01L21/461 , C09G1/02 , C09K3/14 , H01L21/3105 , H01L21/762 , B24B1/00 , G09G1/02 , C01F17/00
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
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5.发明申请Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof 有权化学机械抛光（CMP）组合物用于浅沟槽隔离（STI）应用及其制备方法公开(公告)号：US20140374378A1
公开(公告)日：2014-12-25
申请号：US14482590
申请日：2014-09-10
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译： 应用用于从氧化铈颗粒中除去，还原或处理痕量金属污染物和较小的细小二氧化铈颗粒的方法，用于浅沟槽隔离（STI）工艺的氧化铈浆料或化学机械抛光（CMP）组合物。 使用经处理的化学机械抛光（CMP）组合物或通过使用经处理的氧化铈颗粒或经处理的氧化铈浆料制备的CMP抛光组合物用于抛光至少含有用于STI的二氧化硅膜表面的衬底（浅沟槽隔离 ）处理和应用。 已经观察到由于痕量金属离子污染物的减少和在浅沟槽隔离（STI）CMP抛光中减少了非常小的细小的氧化铈颗粒）而减少的纳米尺寸颗粒相关缺陷。
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公开(公告)号：US20160177134A1
公开(公告)日：2016-06-23
申请号：US15058268
申请日：2016-03-02
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
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7.发明授权Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof 有权用于浅沟槽隔离（STI）应用的化学机械抛光（CMP）组合物及其制备方法公开(公告)号：US09305476B2
公开(公告)日：2016-04-05
申请号：US14709609
申请日：2015-05-12
发明人： Xiaobo Shi , John Edward Quincy Hughes , Hongjun Zhou , Daniel Hernandez Castillo, II , Jae Ouk Choo , James Allen Schlueter , Jo-Ann Theresa Schwartz , Laura Ledenbach , Steven Charles Winchester , Saifi Usmani , John Anthony Marsella , Martin Kamau Ngigi Mungai
IPC分类号： H01L21/302 , G09G1/02 , C09K3/14 , H01L21/3105 , H01L21/762 , B24B1/00 , C01F17/00
CPC分类号： C09G1/02 , B24B1/00 , C01F17/00 , C01F17/0043 , C01P2004/52 , C01P2004/62 , C09K3/1409 , C09K3/1463 , G09G1/02 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
摘要翻译： 应用用于从氧化铈颗粒中除去，还原或处理痕量金属污染物和较小的细小二氧化铈颗粒的方法，用于浅沟槽隔离（STI）工艺的氧化铈浆料或化学机械抛光（CMP）组合物。 使用经处理的化学机械抛光（CMP）组合物或通过使用处理的氧化铈颗粒或经处理的氧化铈浆料制备的CMP抛光组合物来抛光至少包含用于STI的二氧化硅膜表面的衬底（浅沟槽隔离 ）处理和应用。 已经观察到由于痕量金属离子污染物的减少和在浅沟槽隔离（STI）CMP抛光中减少了非常小的细小的氧化铈颗粒）而减少的纳米尺寸颗粒相关缺陷。
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