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    III-V compound semiconductor substrate manufacturing method
    1.
    发明授权
    III-V compound semiconductor substrate manufacturing method 失效
    III-V族化合物半导体衬底制造方法

    公开(公告)号：US07960284B2

    公开(公告)日：2011-06-14

    申请号：US12018198

    申请日：2008-01-23

    申请人： Akihiro Hachigo ,  Naoki Matsumoto ,  Takayuki Nishiura

    发明人： Akihiro Hachigo ,  Naoki Matsumoto ,  Takayuki Nishiura

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02052 ,  C30B29/40 ,  C30B33/12 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/30621

    摘要： Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (polishing step). Second, the surface 3a of the wafer 3 is cleaned (first cleaning step S7). Next, the surface 3a of the wafer 3 is subjected to first dry-etching, employing a halogen-containing gas, while first bias voltage is applied to a chuck 24 for carrying the wafer 3. Subsequently, the surface 3a of the wafer 3 is subjected to second dry-etching, employing the halogen-containing gas (second dry-etching step S11), while second bias power lower than the first bias power is applied to the chuck 24.

    摘要翻译： 提供能够提高基板PL强度的III-V族化合物半导体基板的制造方法。 在这种III-V族化合物半导体衬底的制造方法中，首先对晶片3的表面3a进行研磨（研磨工序）。 其次，清洁晶片3的表面3a（第一清洗步骤S7）。 接下来，对用于承载晶片3的卡盘24施加第一偏置电压，对晶片3的表面3a进行第一次干蚀刻，然后使用含卤素气体。随后，晶片3的表面3a 使用含卤素气体（第二干法蚀刻步骤S11）进行第二干蚀刻，同时将低于第一偏压功率的第二偏压功率施加到卡盘24。

    III-V Compound Semiconductor Substrate Manufacturing Method
    2.
    发明申请
    III-V Compound Semiconductor Substrate Manufacturing Method 失效
    III-V复合半导体基板制造方法

    公开(公告)号：US20080176400A1

    公开(公告)日：2008-07-24

    申请号：US12018198

    申请日：2008-01-23

    申请人： Akihiro Hachigo ,  Naoki Matsumoto ,  Takayuki Nishiura

    发明人： Akihiro Hachigo ,  Naoki Matsumoto ,  Takayuki Nishiura

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02052 ,  C30B29/40 ,  C30B33/12 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/30621

    摘要： Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (polishing step). Second, the surface 3a of the wafer 3 is cleaned (first cleaning step S7). Next, the surface 3a of the wafer 3 is subjected to first dry-etching, employing a halogen-containing gas, while first bias voltage is applied to a chuck 24 for carrying the wafer 3. Subsequently, the surface 3a of the wafer 3 is subjected to second dry-etching, employing the halogen-containing gas (second dry-etching step S11), while second bias power lower than the first bias power is applied to the chuck 24.

    摘要翻译： 提供能够提高基板PL强度的III-V族化合物半导体基板的制造方法。 在这种III-V族化合物半导体基板的制造方法中，首先对晶片3的表面3a进行研磨（研磨工序）。 其次，清洗晶片3的表面3a（第一清洗步骤S7）。 接下来，在将第一偏置电压施加到用于承载晶片3的卡盘24的同时，对晶片3的表面3a进行第一次干蚀刻，使用含卤素气体。 随后，利用低于第一偏压功率的第二偏置功率施加到卡盘24，对晶片3的表面3a进行第二次干蚀刻，使用含卤素气体（第二干法蚀刻步骤S11） 。

    NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING THE DEVICES
    5.
    发明申请
    NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING THE DEVICES 审中-公开
    基于氮化物的化合物半导体器件，化合物半导体器件及其制造方法

    公开(公告)号：US20110018105A1

    公开(公告)日：2011-01-27

    申请号：US12890129

    申请日：2010-09-24

    申请人： Akihiro Hachigo ,  Takayuki Nishiura

    发明人： Akihiro Hachigo ,  Takayuki Nishiura

    IPC分类号： H01L21/30 ,  H01L29/34 ,  H01L21/306

    CPC分类号： H01L21/02052 ,  H01L33/007

    摘要： There is provided a method of producing a nitride-based compound semiconductor device that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. The method of producing a nitride-based compound semiconductor device in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, the nitride-based compound semiconductor is cleaned with a cleaning liquid having a pH of 7.1 or higher ultrasonically.

    摘要翻译： 提供一种制造氮化物系化合物半导体装置的方法，其抑制在化合物半导体的表面上包含杂质，微粒等的杂质的附着。 本发明的氮化物类化合物半导体装置的制造方法具有以下步骤：制备氮化物类化合物半导体（或基板制备工序）; 和清洁。 在清洁步骤中，用超声波pH为7.1或更高的清洗液清洗氮化物类化合物半导体。

    Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate
    8.
    发明授权
    Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate 有权
    氮化物系化合物半导体，化合物半导体的清洗方法及其制造方法以及基板

    公开(公告)号：US07569493B2

    公开(公告)日：2009-08-04

    申请号：US11435129

    申请日：2006-05-17

    申请人： Akihiro Hachigo ,  Takayuki Nishiura

    发明人： Akihiro Hachigo ,  Takayuki Nishiura

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02052

    摘要： There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, a cleaning liquid having a pH of 7.1 or higher is used to clean the nitride-based compound semiconductor.

    摘要翻译： 提供一种清除方法和制造方法，其抑制在化合物半导体的表面上的杂质，微粒等杂质的附着。 根据本发明的清洗氮化物基化合物半导体的方法包括以下步骤：制备氮化物基化合物半导体（或基板制备步骤）; 和清洁。 在清洗步骤中，使用pH为7.1以上的清洗液清洗氮化物系化合物半导体。

    Method of working nitride semiconductor crystal
    10.
    发明申请
    Method of working nitride semiconductor crystal 审中-公开
    氮化物半导体晶体的制作方法

    公开(公告)号：US20060292832A1

    公开(公告)日：2006-12-28

    申请号：US11472417

    申请日：2006-06-22

    申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Takayuki Nishiura

    发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Takayuki Nishiura

    IPC分类号： H01L21/00

    CPC分类号： H01L21/3043 ,  B23H7/02 ,  B23H9/00

    摘要： In a method of working a crystal, when a nitride semiconductor crystal is worked, voltage is applied between the nitride semiconductor crystal and a tool electrode to cause electrical discharge, so that the crystal is partially removed and worked by local heat generated by the electrical discharge.

    摘要翻译： 在加工晶体的方法中，当氮化物半导体晶体被加工时，在氮化物半导体晶体和工具电极之间施加电压以进行放电，从而通过放电产生的局部热来部分去除和加工晶体 。