公开(公告)号：US07816232B2

公开(公告)日：2010-10-19

申请号：US12275809

申请日：2008-11-21

申请人： Akihisa Shimomura ,  Masaki Koyama ,  Satohiro Okamoto

发明人： Akihisa Shimomura ,  Masaki Koyama ,  Satohiro Okamoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmospheric pressure; and performing heat treatment.

摘要翻译： 目的在于提供一种均匀的半导体衬底，其中不良接合被降低。 另一个目的是以高产率制造半导体衬底。 第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的一定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用所述空间中的压力和外部大气压之间的差异将所述第二基板设置为与所述第一基板紧密接触; 并进行热处理。

公开(公告)号：US07932164B2

公开(公告)日：2011-04-26

申请号：US12402518

申请日：2009-03-12

申请人： Akihisa Shimomura ,  Masaki Koyama ,  Motoki Nakashima

发明人： Akihisa Shimomura ,  Masaki Koyama ,  Motoki Nakashima

IPC分类号： H01L21/30 ,  H01L21/301 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： Methods for manufacturing a semiconductor substrate and a semiconductor device by which a high-performance semiconductor element can be formed are provided. A single crystal semiconductor substrate including an embrittlement layer and a base substrate are bonded to each other with an insulating layer interposed therebetween, and the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment to fix a single crystal semiconductor layer over the base substrate. Next, a plurality of regions of a monitor substrate are irradiated with laser light under conditions of different energy densities, and carbon concentration distribution and hydrogen concentration distribution in a depth direction of each region of the single crystal semiconductor layer which has been irradiated with the laser light is measured. Optimal irradiation intensity of laser light is irradiation intensity with which a local maximum of the carbon concentration and a shoulder peak of the hydrogen concentration are observed. A single crystal semiconductor layer is irradiated with optimal laser light at energy density detected by using the monitor substrate, whereby a semiconductor substrate is manufactured.

摘要翻译： 提供了可以形成高性能半导体元件的半导体衬底和半导体器件的制造方法。 将包含脆化层和基底基板的单晶半导体基板通过绝缘层彼此接合，通过热处理将单晶半导体基板沿着脆化层分离，将单晶半导体层固定在基板上 基质。 接下来，在能量密度不同的条件下，用激光照射监视器基板的多个区域，并且已经照射了激光的单晶半导体层的各区域的深度方向上的碳浓度分布和氢浓度分布 测光。 激光的最佳照射强度是观察到碳浓度的局部最大值和氢浓度的肩峰值的照射强度。 通过使用监视器基板检测到的能量密度的最佳激光照射单晶半导体层，由此制造半导体衬底。

公开(公告)号：US20070195837A1

公开(公告)日：2007-08-23

申请号：US11730973

申请日：2007-04-05

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： H01S3/00 ,  H01S3/22

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

摘要翻译： 本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。 本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器， 用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束 激光束的能量。

公开(公告)号：US07223306B2

公开(公告)日：2007-05-29

申请号：US10663671

申请日：2003-09-17

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

公开(公告)号：US08772128B2

公开(公告)日：2014-07-08

申请号：US12246577

申请日：2008-10-07

申请人： Shunpei Yamazaki ,  Junpei Momo ,  Fumito Isaka ,  Eiji Higa ,  Masaki Koyama ,  Akihisa Shimomura

发明人： Shunpei Yamazaki ,  Junpei Momo ,  Fumito Isaka ,  Eiji Higa ,  Masaki Koyama ,  Akihisa Shimomura

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  B23K26/03 ,  B23K26/083 ,  B23K26/12 ,  B23K26/127 ,  B23K26/14 ,  H01L21/268 ,  H01L21/3247 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/66772

摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.

摘要翻译： 照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。 在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。 当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。 单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

公开(公告)号：US07247527B2

公开(公告)日：2007-07-24

申请号：US10900463

申请日：2004-07-28

申请人： Akihisa Shimomura ,  Masaki Koyama ,  Hironobu Shoji

发明人： Akihisa Shimomura ,  Masaki Koyama ,  Hironobu Shoji

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L21/02672 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78675

摘要： It is an object of the present invention to provide a method for manufacturing a crystalline semiconductor film comprising the steps of crystallizing with the use of the metal element for promoting the crystallization to control the orientation and irradiating the laser once to form a crystalline semiconductor film having a small crystal grain arranged in a grid pattern at a regular interval.In the present invention made in view of the above object, a ridge forms a grid pattern on a surface of the crystalline semiconductor film in such a way that a crystalline semiconductor film is formed by adding the metal element for promoting the crystallization to the amorphous semiconductor film and the pulsed laser whose polarization direction is controlled is irradiated thereto. As the means for controlling the polarization direction, a half-wave plate or a mirror is used.

摘要翻译： 本发明的目的是提供一种用于制造结晶半导体膜的方法，包括以下步骤：利用金属元素结晶以促进结晶以控制取向并照射激光一次以形成具有 以规则的间隔布置成网格图案的小晶粒。 在鉴于上述目的的本发明中，脊在结晶半导体膜的表面上形成栅格图案，使得通过将用于促进结晶的金属元素添加到非晶半导体中而形成结晶半导体膜 照射其偏振方向被控制的脉冲激光。 作为用于控制偏振方向的装置，使用半波片或反射镜。

公开(公告)号：US08871610B2

公开(公告)日：2014-10-28

申请号：US12568768

申请日：2009-09-29

申请人： Akihisa Shimomura ,  Masaki Koyama ,  Eiji Higa

发明人： Akihisa Shimomura ,  Masaki Koyama ,  Eiji Higa

IPC分类号： H01L21/30 ,  H01L21/762

CPC分类号： H01L21/76254

摘要： To increase adhesion between a single crystal semiconductor layer and a base substrate and to reduce bonding defects therebetween. To perform radical treatment on a surface of a semiconductor substrate to form a first insulating film on the semiconductor substrate; irradiate the semiconductor substrate with accelerated ions through the first insulating film to form an embrittlement region in the semiconductor substrate; form a second insulating film on the first insulating film; perform heat treatment after bonding a surface of the second insulating film and a surface of the base substrate to perform separation along the embrittlement region so that a semiconductor layer is formed over the base substrate with the first and second insulating films interposed therebetween; etch the semiconductor layer; and irradiate the semiconductor layer on which the etching is performed with a laser beam.

摘要翻译： 为了增加单晶半导体层与基底基板之间的粘合力并减小它们之间的接合缺陷。 在半导体衬底的表面进行自由基处理，以在半导体衬底上形成第一绝缘膜; 通过第一绝缘膜照射具有加速离子的半导体衬底，以在半导体衬底中形成脆化区域; 在第一绝缘膜上形成第二绝缘膜; 在接合第二绝缘膜的表面和基底表面之后进行热处理，以沿着脆化区域进行分离，使得在第一和第二绝缘膜之间形成在基底基板上的半导体层; 蚀刻半导体层; 并用激光束照射进行了蚀刻的半导体层。

公开(公告)号：US08314018B2

公开(公告)日：2012-11-20

申请号：US12901005

申请日：2010-10-08

申请人： Akihisa Shimomura ,  Naoki Okuno ,  Masaki Koyama ,  Yasuhiro Jinbo

发明人： Akihisa Shimomura ,  Naoki Okuno ,  Masaki Koyama ,  Yasuhiro Jinbo

IPC分类号： H01L21/425 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1262 ,  H01L27/1266 ,  H01L29/66772

摘要： A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.

摘要翻译： 通过用第一离子掺杂第一单晶半导体衬底形成第一脆化层; 通过用第二离子掺杂第二单晶半导体衬底形成第二脆化层; 第一和第二单晶半导体衬底彼此接合; 通过第一热处理在第二单晶半导体衬底上形成第一单晶半导体膜; 绝缘基板接合在第一单晶半导体膜上; 并且通过第二热处理在绝缘基板上形成第一和第二单晶半导体膜。 第一离子的剂量高于第二离子，第一热处理的温度低于第二热处理的温度。

公开(公告)号：US07881350B2

公开(公告)日：2011-02-01

申请号：US11730973

申请日：2007-04-05

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： H01S3/10

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

摘要翻译： 本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。 本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器， 用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束 激光束的能量。

公开(公告)号：US20090115029A1

公开(公告)日：2009-05-07

申请号：US12285924

申请日：2008-10-16

申请人： Masaki Koyama ,  Fumito Isaka ,  Akihisa Shimomura ,  Junpei Momo

发明人： Masaki Koyama ,  Fumito Isaka ,  Akihisa Shimomura ,  Junpei Momo

IPC分类号： H01L23/58 ,  H01L21/46 ,  H01L21/84

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675

摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved

摘要翻译： 用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。 在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。 用激光束照射与单晶半导体衬底分离的单晶半导体层。 通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。 在激光束照射之后，单晶半导体层在单晶半导体层未熔融的温度下被加热，使得单晶半导体层的寿命得到改善