Laser device, laser display device, and laser irradiation device
    2.
    发明授权
    Laser device, laser display device, and laser irradiation device 失效
    激光装置,激光显示装置和激光照射装置

    公开(公告)号:US08228960B2

    公开(公告)日:2012-07-24

    申请号:US12379903

    申请日:2009-03-04

    IPC分类号: H01S3/10

    摘要: The present invention provides a laser device having a high wavelength conversion efficiency and a wide wavelength width, and is suitable as a display light source. The laser device includes a fundamental wave generating section including a laser diode which has a plurality of luminous points and a bragg reflection structure, and generating a plurality of fundamental waves which has at least a pair of wavelengths different from each other, and a nonlinear optical element having a periodic polarization inversion structure, and generating harmonics corresponding to the plurality of fundamental waves, respectively.

    摘要翻译: 本发明提供具有高波长转换效率和宽波长宽度的激光装置,并且适合作为显示光源。 激光装置包括:基波生成部,具有具有多个发光点和布拉格反射结构的激光二极管,并且生成具有彼此不同的至少一对波长的多个基波;以及非线性光学 元件,具有周期性极化反转结构,并且分别产生对应于多个基波的谐波。

    Laser device, laser display device, and laser irradiation device
    3.
    发明申请
    Laser device, laser display device, and laser irradiation device 失效
    激光装置,激光显示装置和激光照射装置

    公开(公告)号:US20090257462A1

    公开(公告)日:2009-10-15

    申请号:US12379903

    申请日:2009-03-04

    IPC分类号: H01S3/10

    摘要: The present invention provides a laser device having a high wavelength conversion efficiency and a wide wavelength width, and is suitable as a display light source. The laser device includes a fundamental wave generating section including a laser diode which has a plurality of luminous points and a bragg reflection structure, and generating a plurality of fundamental waves which has at least a pair of wavelengths different from each other, and a nonlinear optical element having a periodic polarization inversion structure, and generating harmonics corresponding to the plurality of fundamental waves, respectively.

    摘要翻译: 本发明提供具有高波长转换效率和宽波长宽度的激光装置,并且适合作为显示光源。 激光装置包括:基波发生部,具有激光二极管,具有多个发光点和布拉格反射结构,并且产生具有至少一对波长不同的多个基波;以及非线性光学 元件,具有周期性极化反转结构,并且分别产生对应于多个基波的谐波。

    Projection stereoscopic display
    4.
    发明授权
    Projection stereoscopic display 失效
    投影立体显示

    公开(公告)号:US08451390B2

    公开(公告)日:2013-05-28

    申请号:US12646489

    申请日:2009-12-23

    IPC分类号: G02F1/1335

    CPC分类号: G02B27/26 G02F1/133528

    摘要: A projection stereoscopic display includes: a stereoscopic display optical system receiving linearly polarized light from the light source and displaying a first picture and a second picture both having binocular parallax by linearly polarized light with polarization directions orthogonal to each other, in which the stereoscopic display optical system includes: a reflective liquid crystal panel modulating and reflecting linearly polarized light from the light source in response to a picture signal, a first polarizing device splitting the first picture from reflected light from the reflective liquid crystal panel, a retardation device converting the polarization direction of the first picture into a direction orthogonal thereto, and a second polarizing device splitting the second picture from reflected light from the reflective liquid crystal panel, and superimposing the second picture on the first picture of which the polarization direction is converted by the retardation device.

    摘要翻译: 投影立体显示器包括:立体显示光学系统,其从所述光源接收线偏振光,并且通过具有彼此正交的偏振方向的线偏振光显示第一图像和第二图像,所述第一图像和第二图像具有双眼视差,其中立体显示光学 系统包括:响应于图像信号调制和反射来自光源的线偏振光的反射型液晶面板,将来自反射型液晶面板的反射光分离第一图像的第一偏振装置,将偏振方向 以及第二偏振装置,将来自反射型液晶面板的反射光分割第二图像,并将第二图像叠加在通过延迟装置转换偏振方向的第一图像上。

    Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device
    5.
    发明授权
    Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device 有权
    表面发射半导体激光器及其制造方法以及光学器件

    公开(公告)号:US07489717B2

    公开(公告)日:2009-02-10

    申请号:US10977197

    申请日:2004-10-28

    IPC分类号: H01S5/00

    摘要: A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.

    摘要翻译: 提供了具有稳定保持高功率单水平模式的结构的面发光半导体激光器(VCSEL),以及包括具有该表面发射半导体激光器的光源装置的光学装置。 在表面发射半导体激光器的主电流路径周围,即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。 因此,在空腔结构部分中,局部在外周部分的高阶模的发光激光器的损耗变大,构成了以良好的性能振荡单模激光器的表面发射半导体激光器 。

    METHOD FOR MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER
    6.
    发明申请
    METHOD FOR MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER 有权
    用于制造表面发射半导体激光的方法

    公开(公告)号:US20070202622A1

    公开(公告)日:2007-08-30

    申请号:US11556595

    申请日:2006-11-03

    IPC分类号: H01L21/00 H01S5/00

    摘要: A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.

    摘要翻译: 提供了一种制造具有稳定地保持高功率单水平模式的结构的表面发射半导体激光器的方法。 在表面发射半导体激光器的主电流路径周围,即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。 因此,在空腔结构部分中,局部在外周部分的高阶模的发光激光器的损耗变大,构成了以良好的性能振荡单模激光器的表面发射半导体激光器 。

    Battery charging method
    8.
    发明授权
    Battery charging method 失效
    电池充电方式

    公开(公告)号:US07180269B2

    公开(公告)日:2007-02-20

    申请号:US10896013

    申请日:2004-07-22

    CPC分类号: H02J7/0091 H02J7/0073

    摘要: The battery charging detects battery temperature and includes a temperature maintaining charging operation wherein average charging current is controlled to drive battery temperature to a holding temperature, and charging is performed while maintaining battery temperature at that holding temperature. In addition, a temperature increasing charging operation occurs prior to the temperature maintaining charging operation. The battery is charged with a current which raises battery temperature until the holding temperature is reached. When battery temperature rises to the holding temperature in the temperature increasing charging operation, charging can transition to the temperature maintaining charging operation.

    摘要翻译: 电池充电检测电池温度,并且包括维持充电操作,其中平均充电电流被控制以将电池温度驱动到保持温度,并且在将电池温度保持在该保持温度的同时进行充电。 此外,在温度保持充电操作之前发生升温充电操作。 电池充满电流,提高电池温度直到达到保持温度。 当电池温度升高到升温充电操作中的保持温度时,充电可以转变到维持充电操作。

    Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device
    9.
    发明申请
    Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device 有权
    表面发射半导体激光器及其制造方法以及光学器件

    公开(公告)号:US20050089075A1

    公开(公告)日:2005-04-28

    申请号:US10977197

    申请日:2004-10-28

    摘要: A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.

    摘要翻译: 提供了具有稳定保持高功率单水平模式的结构的面发光半导体激光器(VCSEL),以及包括具有该表面发射半导体激光器的光源装置的光学装置。 在表面发射半导体激光器的主电流路径周围,即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。 因此,在空腔结构部分中,局部在外周部分的高阶模的发光激光器的损耗变大,构成了以良好的性能振荡单模激光器的表面发射半导体激光器 。

    Hydrogen absorbing alloy
    10.
    发明授权
    Hydrogen absorbing alloy 失效
    吸氢合金

    公开(公告)号:US5304345A

    公开(公告)日:1994-04-19

    申请号:US963030

    申请日:1992-10-19

    IPC分类号: C22C19/00 C22C19/03 H01M4/38

    CPC分类号: H01M4/383 Y10S420/90

    摘要: A hydrogen absorbing alloy having a crystal structure of CaCu.sub.5 -type hexagonal system and represented by the general formula Re.sub.1-x Y.sub.x (Ni.sub.5-y G.sub.y).sub.z wherein Re is one of La, Ce, Nd, Pr, misch metal and lanthanum-rich misch metal, Y is yttrium, Ni is nickel, and G is an element capable of forming an intermetallic compound or complete solid solution in corporation with Ni or a mixture of such elements, and x, y and z are in the ranges of 0

    摘要翻译: 具有CaCu5型六方晶系的晶体结构并由通式Re 1-x Y x(Ni 5-y Ge y)z表示的吸氢合金,其中Re为La,Ce,Nd,Pr,混合稀土金属和富镧稀混合金属之一 ,Y是钇,Ni是镍,G是能够与Ni或这些元素的混合物一起形成金属间化合物或完全固溶体的元素,x,y和z在0