Engine variable valve timing system
    1.
    发明授权
    Engine variable valve timing system 失效
    发动机可变气门正时系统

    公开(公告)号:US06860247B2

    公开(公告)日:2005-03-01

    申请号:US10714227

    申请日:2003-11-14

    IPC分类号: F01L1/344 F01L1/34

    摘要: In the variable valve timing system according to the present invention, portions of the intake-side advancing hydraulic line and a retarding hydraulic line respectively constitute annular grooves 104 and 113 for advancing and retarding provided on the intake camshaft 5 bearing surface 5a of the cam cap 4 which supports the camshafts 5 and 6. In addition, portions of the advancing hydraulic line and the retarding hydraulic line for exhaust respectively constitute annular grooves for advancing and retarding 123 and 133 provided on the exhaust camshaft 6 bearing surface 4b of the cam cap 4. Moreover, the annular groove for retarding 113 on the intake camshaft 5 bearing surface 4a and the annular groove for advancing 123 on the exhaust camshaft 6 bearing surface 4b are respectively provided in the center in the width direction of their respective bearing surfaces 4a and 4b.

    摘要翻译: 在根据本发明的可变气门正时系统中,进气侧前进液压管线和延迟液压管路的部分分别构成用于在进气凸轮轴5的凸轮轴5的轴承面5a上设置的用于前进和延迟的环形槽104和113 此外,前进液压管路和排气缓冲液压管路的一部分分别构成用于使设在凸轮盖4的排气凸轮轴6轴承面4b上的123和133的推进和延迟的环形槽 此外,在进气凸轮轴5的承载面4a上延伸的环状槽113和排气凸轮轴6轴承面4b上的行进用环状槽123分别设置在其各自的轴承面4a,4b的宽度方向的中央 。

    Valve timing controller for use with internal combustion engine
    2.
    发明授权
    Valve timing controller for use with internal combustion engine 失效
    用于内燃机的气门正时控制器

    公开(公告)号:US5381764A

    公开(公告)日:1995-01-17

    申请号:US237107

    申请日:1994-05-03

    IPC分类号: F01L1/34 F01L13/00

    摘要: An internal combustion engine is equipped with a valve timing controller capable of minimizing the electric power consumption and frictional wear of elements. The valve timing controller can vary the valve timing of valves. A camshaft is moved axially forwardly or rearwardly by electrically energizing an outer solenoid clutch or a brake releasing solenoid, respectively. An axial movement of the camshaft results in a change in valve timing. With the exception of a transient period during which the valve timing is being varied, both the brake releasing solenoid and the outer clutch are electrically deenergized to thereby reduce the electric power consumption, and both of them are maintained out of contact with a displaceable disc 13 to thereby reduce frictional wear thereof.

    摘要翻译: 内燃机配备有能够最小化元件的电力消耗和摩擦磨损的气门正时控制器。 阀门正时控制器可以改变阀门的正时。 凸轮轴分别通过对外部电磁离合器或制动释放螺线管施加电力而轴向向前或向后移动。 凸轮轴的轴向运动导致气门正时的变化。 除了气门正时变化的瞬时期间外,制动释放螺线管和外离合器两者都被电断电,从而降低电力消耗,并且它们都保持与可移动盘13不接触 从而降低其摩擦磨损。

    System for controlling valve shift timing of an engine
    3.
    发明授权
    System for controlling valve shift timing of an engine 失效
    用于控制发动机的换挡时间的系统

    公开(公告)号:US5329895A

    公开(公告)日:1994-07-19

    申请号:US127280

    申请日:1993-09-27

    摘要: An intake valve or an exhaust valve is lifted through a swingable cam by the rotation of a rotatable cam formed in the cam shaft. A surface at which the swingable cam abuts with the rotatable cam is tapered in the axial direction in which said cam shaft extends, and the valve shift timing is changed by transferring the cam shaft, that is, the rotatable cam in the axial direction in which said cam shaft extends. The power transmitting member such as a helical gear to be rotated with the output shaft of the engine is engaged with the cam shaft through a helical spline. The power transmitting member is so arranged as to be unmovable in the axial direction in which said cam shaft extends. The rotational phase of the rotatable cam relative to the output shaft of the engine is changed by displacement of the cam shaft relative to the power transmitting member in the axial direction in which said cam shaft extends.

    摘要翻译: 进气阀或排气阀通过在凸轮轴上形成的可旋转凸轮的旋转而被提升通过可摆动的凸轮。 可摆动凸轮与可旋转凸轮抵接的表面在所述凸轮轴延伸的轴向方向上渐缩,并且通过传递凸轮轴,即沿着轴向方向的可旋转凸轮来改变阀移动正时,其中, 所述凸轮轴延伸。 诸如与发动机的输出轴一起旋转的斜齿轮的动力传递构件通过螺旋花键与凸轮轴接合。 动力传递构件被布置成在所述凸轮轴延伸的轴向方向上不可移动。 旋转凸轮相对于发动机的输出轴的旋转相位通过凸轮轴相对于动力传递部件在所述凸轮轴延伸的轴向方向上的位移而改变。

    Valve operating system of engine
    4.
    发明授权
    Valve operating system of engine 失效
    发动机气门操作系统

    公开(公告)号:US5367991A

    公开(公告)日:1994-11-29

    申请号:US210484

    申请日:1994-03-21

    IPC分类号: F01L1/344 F01L13/00 F01L1/34

    CPC分类号: F01L1/34403 F01L13/0042

    摘要: A valve operating system of an engine opens and closes a valve by a swing cam being swung by rotation of an operating cam. The operating cam has a cam surface and is rotated by the engine, and the swing cam has a cam surface in sliding contact with the valve and a cam follower in sliding contact with the cam surface of the operating cam. The cam surface of the operating cam and the cam surface of the swing cam are formed so that an acceleration component of the swing cam is larger than that of the operating cam in a positive region of a valve lift acceleration defined as a sum of the acceleration component of the operating cam and the acceleration component of the swing cam.

    摘要翻译: 发动机的气门操作系统通过由操作凸轮旋转摆动的摆动凸轮来打开和关闭阀。 操作凸轮具有凸轮面并由发动机旋转,并且摆动凸轮具有与阀滑动接触的凸轮表面和与操作凸轮的凸轮表面滑动接触的凸轮从动件。 操作凸轮的凸轮表面和摆动凸轮的凸轮表面形成为使得摆动凸轮的加速度分量大于操作凸轮在加速度加速度的正区域中的加速度分量,其被定义为加速度之和 操作凸轮的分量和摆动凸轮的加速度分量。

    OPTIMUM DESIGN METHOD AND APPARATUS, AND PROGRAM FOR THE SAME
    6.
    发明申请
    OPTIMUM DESIGN METHOD AND APPARATUS, AND PROGRAM FOR THE SAME 失效
    最佳设计方法和设备及其相关程序

    公开(公告)号:US20080015828A1

    公开(公告)日:2008-01-17

    申请号:US11778367

    申请日:2007-07-16

    IPC分类号: G06F17/10

    CPC分类号: G06F17/11

    摘要: In an optimum design method comprising a first solution determining step of solving an optimization problem of a first evaluation function for a state variable vector with a design variable vector being as a parameter, and a second solution determining step of solving an optimization problem of a second evaluation function for the design variable vector and the state variable vector thus obtained, the second solution determining step includes the steps of computing a gradient vector of the second evaluation function for the design variable vector, computing a first coefficient based on a value of a norm of the gradient vector, computing a search vector based on the first coefficient, computing a second coefficient, and updating the design variable vector based on the second coefficient. The second coefficient computing step includes the first solution determining step, the first solution determining step is executed as an iterative method based on the gradient vector, and the state variable vector is not initialized during iteration. The optimum design method is precisely adaptable for structural changes.

    摘要翻译: 一种最优设计方法,包括:第一解决方案确定步骤,用于以设计变量向量作为参数来求解用于状态变量向量的第一评估函数的优化问题;以及第二解决方案确定步骤,用于求解第二 第二解决方案确定步骤包括以下步骤:计算用于设计变量向量的第二评估函数的梯度向量,基于规范的值计算第一系数;对于设计变量向量和状态变量向量的评估函数, 的梯度向量,基于第一系数计算搜索向量,计算第二系数,并且基于第二系数更新设计变量向量。 第二系数计算步骤包括第一解决方案确定步骤,基于梯度向量作为迭代方法执行第一解决方案确定步骤,并且在迭代期间不初始化状态变量向量。 最佳设计方法适用于结构变化。

    Semiconductor device and method for fabricating the same
    8.
    发明申请
    Semiconductor device and method for fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号:US20050087803A1

    公开(公告)日:2005-04-28

    申请号:US10997127

    申请日:2004-11-24

    摘要: On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.

    摘要翻译: 在Si衬底1上形成缓冲层2,SiGe层3和Si覆盖层4。 在基板上形成掩模,然后对基板进行图案化。 以这种方式,形成沟槽7a以到达Si衬底1并且暴露SiGe层3的侧面。 然后,将沟槽7a的表面在750℃下进行1小时的热处理,使得包含在SiGe层3的表面部分中的Ge蒸发。 因此,在沟槽7a的一部分暴露的SiGe层3的一部分,形成Ge含量低于SiGe层3的Ge含量低的Ge蒸发部分8。 此后,沟槽7a的壁被氧化。

    Variable capacitance device and process for manufacturing the same
    9.
    发明授权
    Variable capacitance device and process for manufacturing the same 失效
    可变电容器件及其制造方法

    公开(公告)号:US06867107B2

    公开(公告)日:2005-03-15

    申请号:US10456531

    申请日:2003-06-09

    摘要: A variable capacitance device comprising, in a semiconductor layer formed on a substrate via an buried oxide film: an n− region 132 formed in the shape of a ring and containing an n-type dopant; an anode 133 adjoined to the outer periphery of the n− region 132, the anode 133 being formed in the shape of a ring and containing a p-type dopant; and a cathode 131 adjoined to the inner periphery of the n− region 132, the third region containing an n-type dopant, wherein the dopant concentration in the n− region 132 is lower than that in each of the anode 133 and the cathode 131.

    摘要翻译: 一种可变静电电容器件,包括:通过掩埋氧化膜形成在衬底上的半导体层:形成为环形并包含n型掺杂剂的n区132; 邻接于n-区132的外周的阳极133,阳极133形成为环状并含有p型掺杂剂; 以及与n区132的内周相邻的阴极131,所述第三区包含n型掺杂剂,其中所述n区132中的掺杂剂浓度低于阳极133和阴极131中的掺杂浓度 。

    Semiconductor device and method for fabricating the same
    10.
    发明授权
    Semiconductor device and method for fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号:US06861316B2

    公开(公告)日:2005-03-01

    申请号:US10637212

    申请日:2003-08-08

    摘要: On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.

    摘要翻译: 在Si衬底1上形成缓冲层2,SiGe层3和Si覆盖层4。 在基板上形成掩模,然后对基板进行图案化。 以这种方式,形成沟槽7a以到达Si衬底1并且暴露SiGe层3的侧面。 然后,将沟槽7a的表面在750℃下进行1小时的热处理,使得包含在SiGe层3的表面部分中的Ge蒸发。 因此,在沟槽7a的一部分暴露的SiGe层3的一部分,形成Ge含量低于SiGe层3的Ge含量低的Ge蒸镀部8。 此后,沟槽7a的壁被氧化。