公开(公告)号：US20070205112A1

公开(公告)日：2007-09-06

申请号：US11797480

申请日：2007-05-03

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B23H3/00

CPC分类号： B23H5/08 ,  B24B53/001 ,  B24B53/017 ,  C09G1/02 ,  C25F3/02 ,  C25F7/00 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/7684

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US20050282378A1

公开(公告)日：2005-12-22

申请号：US10941882

申请日：2004-09-16

申请人： Akira Fukunaga ,  Manabu Tsujimura ,  Hiroaki Inoue

发明人： Akira Fukunaga ,  Manabu Tsujimura ,  Hiroaki Inoue

IPC分类号： C23C16/00 ,  C23C16/04 ,  C23C16/06 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C16/042 ,  C23C16/045 ,  C23C16/06 ,  H01L21/7684 ,  H01L21/76849

摘要： An interconnects forming method and an interconnects forming apparatus are useful for embedding a conductive material (interconnect material), such as copper or silver, into interconnect recesses provided in a surface of a substrate, such as a semiconductor wafer, to thereby form embedded interconnects, and selectively covering the surfaces of embedded interconnects with a metal film (protective film) to provide a multi-level structure. The interconnects forming method comprises: providing a substrate which has been prepared by forming a barrier layer over a substrate surface having interconnect recesses formed in an insulating film, and then forming a film of an interconnect material in the interconnect recesses and over the substrate surface; removing extra interconnect material formed over the substrate surface, thereby forming interconnects with the interconnect material embedded in the interconnect recesses and making the barrier layer present in the other portion than the interconnect-formed portion exposed; and forming a metal film selectively on surfaces of interconnects.

摘要翻译： 互连形成方法和互连形成装置可用于将诸如铜或银的导电材料（互连材料）嵌入设置在诸如半导体晶片的基板的表面中的互连凹槽中，从而形成嵌入式互连， 并且用金属膜（保护膜）选择性地覆盖嵌入式互连件的表面以提供多层结构。 互连形成方法包括：提供通过在绝缘膜上形成具有互连凹槽的衬底表面上形成阻挡层，然后在互连凹槽中并在衬底表面上形成互连材料的膜而制备的衬底; 去除形成在衬底表面上的额外的互连材料，从而与嵌入在互连凹槽中的互连材料形成互连，并使阻挡层存在于暴露的互连形成部分的另一部分中; 并在互连表面上选择性地形成金属膜。

公开(公告)号：US4906257A

公开(公告)日：1990-03-06

申请号：US248905

申请日：1988-09-23

申请人： Akira Fukunaga ,  Manabu Tsujimura ,  Ohsato, Masaaki

发明人： Akira Fukunaga ,  Manabu Tsujimura ,  Ohsato, Masaaki

IPC分类号： B01D53/46

CPC分类号： B01D53/46

摘要： A method of and apparatus for treating waste gas from semiconductor manufacturing equipment with a dry solid absorbent. A bypass pipe which is equipped with a bypass valve is provided between inlet and outlet pipes of a container packed with the absorbent, and when a reaction chamber of the semiconductor manufacturing equipment is evacuated to a level below that of atmospheric pressure, the bypass valve is opened to prevent the large amount of non-toxic gas that is discharged from the reaction chamber during the evacuation from being fed to the absorbent-packed container. Large variations in the flow rate of the gas are thus avoided and safe and efficient waste gas treatment with a dry solid absorbent having a relatively small particle diameter is possible.

公开(公告)号：US20070099426A1

公开(公告)日：2007-05-03

申请号：US11316845

申请日：2005-12-27

申请人： Manabu Tsujimura ,  Akira Fukunaga ,  Yutaka Wada ,  Itsuki Kobata

发明人： Manabu Tsujimura ,  Akira Fukunaga ,  Yutaka Wada ,  Itsuki Kobata

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C25F7/00 ,  H01L21/3212 ,  H01L21/32125

摘要： A polishing method polishes a substrate so as to remove an interconnect metal film and a barrier film formed on portions other than interconnect recesses. The method includes performing a first polishing process of polishing a surface of the substrate After performing the first polishing process, the surface of the substrate is cleaned. After cleaning, a second polishing process is performed for further polishing the surface of the substrate. At least one of performing the first polishing process and performing the second polishing process includes performing electrolytic polishing.

摘要翻译： 抛光方法抛光衬底以去除互连金属膜和形成在互连凹槽之外的部分上的阻挡膜。 该方法包括进行抛光基板的表面的第一抛光处理。在进行第一抛光处理之后，清洁基板的表面。 在清洁之后，执行第二抛光工艺以进一步抛光衬底的表面。 执行第一抛光处理并执行第二抛光处理中的至少一个包括进行电解抛光。

公开(公告)号：US20070254558A1

公开(公告)日：2007-11-01

申请号：US11661141

申请日：2005-08-26

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B24B37/04 ,  H01L21/00

CPC分类号： H01L21/6708 ,  B24B37/005 ,  B24B37/042 ,  B24B37/046 ,  B24B49/006 ,  B24B57/02

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US20060086618A1

公开(公告)日：2006-04-27

申请号：US11254789

申请日：2005-10-21

申请人： Akira Fukunaga ,  Manabu Tsujimura

发明人： Akira Fukunaga ,  Manabu Tsujimura

IPC分类号： C25D5/02

CPC分类号： H01L21/76873 ,  C25D7/123 ,  C25D17/001 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/76849 ,  H01L21/76877

摘要： An interconnects-forming method can form a film of interconnect material, having a sufficient adhesion, by electroplating uniformly on an entire surface of a substrate and thus can form highly-reliable embedded interconnects even when the design rule is strict, and which can remove an extra interconnect material at a lower pressure. The interconnects-forming method, including: forming a conductive film on a surface of a substrate having interconnect recesses formed in an insulating film, said conductive film being insoluble in an electrolytic plating solution for the formation of a film of an interconnect material; forming a film of the interconnect material by electroplating on a surface of the conductive film serving as a seed film while filling the interconnect recesses with the interconnect material; and removing an extra interconnect material of the film formed on the conductive film, thereby forming interconnects of the interconnect material embedded in the interconnect recesses.

摘要翻译： 互连形成方法可以通过均匀地电镀在基板的整个表面上形成具有足够的粘附性的互连材料的膜，并且因此即使设计规则是严格的也可以形成高度可靠的嵌入式互连，并且可以去除 额外的互连材料在较低的压力。 所述互连形成方法包括：在具有形成在绝缘膜中的互连凹槽的基板的表面上形成导电膜，所述导电膜不溶于用于形成互连材料膜的电解电镀液; 在用所述互连材料填充所述互连凹槽的同时，通过电镀在所述导电膜的表面上形成所述互连材料的膜; 以及除去形成在导电膜上的膜的额外互连材料，从而形成嵌入在互连凹槽中的互连材料的互连。

公开(公告)号：US20070243797A1

公开(公告)日：2007-10-18

申请号：US11785190

申请日：2007-04-16

申请人： Akira Fukunaga ,  Noburu Shimizu ,  Shintaro Kamioka ,  Manabu Tsujimura

发明人： Akira Fukunaga ,  Noburu Shimizu ,  Shintaro Kamioka ,  Manabu Tsujimura

IPC分类号： B24B49/00 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24B49/045 ,  H01L22/26

摘要： A polishing method for polishing a workpiece using the chemical polishing process endpoint detecting technology is applicable to actual polishing processes and polishing apparatus. The polishing method including pressing the workpiece against a polishing surface of a polishing table, moving the workpiece and the polishing surface relatively to each other to polish the workpiece, and disposing a gas suction pipe having a gas inlet port, directly above the polishing surface, supplying an atmospheric gas from above the polishing surface through the gas inlet port to a gas detector via the gas suction pipe, and monitoring a particular gas contained in the atmospheric gas with the gas detector while the workpiece is being polished.

摘要翻译： 使用化学抛光处理终点检测技术对工件进行抛光的抛光方法适用于实际的抛光工艺和抛光装置。 抛光方法包括将工件压靠在抛光台的研磨面上，相对移动工件和抛光表面以抛光工件，并且在抛光表面正上方设置具有气体入口的气体吸入管， 通过气体吸入管将来自抛光表面上方的大气气体通过气体入口供给到气体检测器，并且在抛光工件时，利用气体检测器监测包含在气体中的特定气体。

公开(公告)号：US20060003521A1

公开(公告)日：2006-01-05

申请号：US11220570

申请日：2005-09-08

申请人： Akira Fukunaga ,  Manabu Tsujimura

发明人： Akira Fukunaga ,  Manabu Tsujimura

IPC分类号： H01L21/8238

CPC分类号： H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/288 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76879

摘要： A damaged layer which is necessarily produced on the exposed surface of an interconnect by flattening of a surface of a substrate for forming interconnect according to a damascene process is restored, making it possible to manufacture semiconductor devices with a high yield. A semiconductor device is manufactured by preparing a substrate having an interconnect recess formed in ah interlevel dielectric, depositing an interconnect material on the surface of the substrate to embed the interconnect material in the interconnect recess, removing the interconnect material excessively formed on the surface of the substrate to flatten the surface of the substrate, thereby forming an interconnect of the interconnect material, and restoring a damaged layer formed on the exposed surface of the interconnect.

摘要翻译： 通过根据镶嵌工艺对用于形成互连的基板的表面进行平坦化而必须在互连的暴露表面上产生的受损层被恢复，使得可以以高产率制造半导体器件。 通过制备具有形成在层间电介质中的互连凹槽的衬底来制造半导体器件，在衬底的表面上沉积互连材料以将互连材料嵌入到互连凹槽中，从而去除在 基板，使基板的表面变平，由此形成互连材料的互连，并恢复形成在互连的暴露表面上的损伤层。

公开(公告)号：US20050191858A1

公开(公告)日：2005-09-01

申请号：US11064511

申请日：2005-02-24

申请人： Akira Fukunaga ,  Toshikazu Nomura ,  Katsuhiko Tokushige ,  Manabu Tsujimura

发明人： Akira Fukunaga ,  Toshikazu Nomura ,  Katsuhiko Tokushige ,  Manabu Tsujimura

IPC分类号： B24B37/04 ,  B24B49/12 ,  B24B49/16 ,  H01L21/00 ,  H01L21/321 ,  H01L21/8242 ,  B24B51/00 ,  H01L21/461

CPC分类号： H01L21/67173 ,  B24B37/013 ,  B24B49/12 ,  B24B49/16 ,  H01L21/3212 ,  H01L21/6708 ,  H01L21/67219

摘要： A substrate processing apparatus can process a substrate having a metal film formed thereon. The substrate processing apparatus has a process unit configured to remove a native oxide of a metal film formed on a surface of a substrate. The substrate processing apparatus also has a planarization unit configured to planarize the metal film of the substrate. The process unit may comprise a wet process unit configured to dissolve the native oxide of the metal film in a chemical liquid or a dry process unit configured to reduce or etch the native oxide of the metal film with a gas.

摘要翻译： 基板处理装置可以处理其上形成有金属膜的基板。 基板处理装置具有处理单元，其被配置为去除在基板的表面上形成的金属膜的自然氧化物。 基板处理装置还具有将基板的金属膜平坦化的平坦化单元。 处理单元可以包括湿处理单元，其被配置为将金属膜的天然氧化物溶解在化学液体或干燥处理单元中，所述干燥处理单元被配置为用气体还原或蚀刻金属膜的天然氧化物。

公开(公告)号：US07891337B2

公开(公告)日：2011-02-22

申请号：US12201488

申请日：2008-08-29

申请人： Katsuhiko Takeuchi ,  Kouji Ishizuka ,  Manabu Tsujimura

发明人： Katsuhiko Takeuchi ,  Kouji Ishizuka ,  Manabu Tsujimura

IPC分类号： F02M7/00 ,  F02M51/00 ,  B60T7/12

CPC分类号： F02D41/2467 ,  F02D41/1497 ,  F02D41/2438 ,  F02D2200/1012

摘要： A fuel injection system designed to learn the quantity of fuel sprayed actually from a fuel injector into an internal combustion engine. When the engine is placed in a given learning condition, the system works to spray different quantities of the fuel for different injection durations in sequence to the engine through the fuel injector to collect a plurality of data on the quantity of the fuel sprayed actually from the fuel injector. The system analyzes the corrected data to determine an injection characteristic of the fuel injector, which may have changed from a designer-defined basic injection characteristic of the fuel injector, and uses the injection characteristic in calculating an injection duration or on-duration for which the fuel injector is to be opened to spray a target quantity of fuel.

摘要翻译： 一种燃料喷射系统，用于了解实际从燃料喷射器喷射到内燃机中的燃料量。 当发动机处于给定的学习状态时，系统通过燃料喷射器依次向不同喷射持续时间喷射不同数量的燃料以收集关于实际从喷油器喷射的燃料量的多个数据 喷油器。 该系统分析校正的数据以确定燃料喷射器的喷射特性，该喷射特性可以从燃料喷射器的设计者定义的基本喷射特性改变，并且在计算喷射持续时间或喷射持续时间时使用喷射特性， 燃料喷射器打开以喷射目标量的燃料。