公开(公告)号：US06774462B2

公开(公告)日：2004-08-10

申请号：US10278882

申请日：2002-10-24

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

IPC分类号： H01L2358

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/792

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜， 包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在 下氮化硅膜比上述氮化硅膜高。

公开(公告)号：US07372113B2

公开(公告)日：2008-05-13

申请号：US10880508

申请日：2004-07-01

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

IPC分类号： H01L21/314

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/792

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜， 包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在 下氮化硅膜比上述氮化硅膜高。

公开(公告)号：US20070215958A1

公开(公告)日：2007-09-20

申请号：US11798593

申请日：2007-05-15

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

IPC分类号： H01L29/94

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/40117 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/792

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜， 包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在 下氮化硅膜比上述氮化硅膜高。

公开(公告)号：US06903422B2

公开(公告)日：2005-06-07

申请号：US10609520

申请日：2003-07-01

申请人： Akira Goda ,  Mitsuhiro Noguchi ,  Masayuki Tanaka ,  Shigehiko Saida

发明人： Akira Goda ,  Mitsuhiro Noguchi ,  Masayuki Tanaka ,  Shigehiko Saida

IPC分类号： H01L27/10 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

CPC分类号： H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11546

摘要： A semiconductor integrated circuit is disclosed, which includes a semiconductor substrate, a memory cell formed on the semiconductor substrate and having a first gate insulating layer of a stacked structure which includes a silicon nitride layer to become a charge storage layer, and a transistor formed on the semiconductor substrate and having a second gate insulating layer. Here, source and drain diffused layers of the memory cell are covered with a part of the first gate insulating layer, and metal silicide layers are formed on surfaces of source and drain diffused layers of the transistor.

摘要翻译： 公开了一种半导体集成电路，其包括半导体衬底，形成在半导体衬底上的存储单元，并且具有堆叠结构的第一栅极绝缘层，其包括形成电荷存储层的氮化硅层，以及形成在 半导体衬底并具有第二栅极绝缘层。 这里，存储单元的源极和漏极扩散层被第一栅极绝缘层的一部分覆盖，并且金属硅化物层形成在晶体管的源极和漏极扩散层的表面上。

公开(公告)号：US07129132B2

公开(公告)日：2006-10-31

申请号：US10895087

申请日：2004-07-21

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01I21/336

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

公开(公告)号：US07098115B2

公开(公告)日：2006-08-29

申请号：US10895088

申请日：2004-07-21

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L21/76

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

摘要翻译： 使用六氯二硅烷（Si 2 C 6 C 6）作为形成氮化硅膜的Si原料，其可以与氧化硅膜的蚀刻速率差别很大。 氮化硅膜通过LPCVD法形成。

公开(公告)号：US20050014354A1

公开(公告)日：2005-01-20

申请号：US10916500

申请日：2004-08-12

申请人： Yoshio Ozawa ,  Masayuki Tanaka ,  Kiyotaka Miyano ,  Shigehiko Saida

发明人： Yoshio Ozawa ,  Masayuki Tanaka ,  Kiyotaka Miyano ,  Shigehiko Saida

IPC分类号： H01L29/78 ,  H01L29/49 ,  H01L21/338 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/4983 ,  H01L29/41783 ,  H01L29/6656

摘要： A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1-30 atomic % of chlorine.

摘要翻译： 半导体器件包括半导体器件，其包括半导体衬底，形成在半导体衬底中的源极/漏极区域，形成在半导体衬底上的栅极绝缘膜，形成在源极/漏极区域之间的栅极绝缘膜上的栅电极和 形成在栅电极的侧表面上的栅极侧壁间隔物，其中栅极侧壁间隔物由含有0.1-30原子％氯的氧化硅组成。

公开(公告)号：US06790723B2

公开(公告)日：2004-09-14

申请号：US09984404

申请日：2001-10-30

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L218242

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

公开(公告)号：US06333547B1

公开(公告)日：2001-12-25

申请号：US09478369

申请日：2000-01-06

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L2358

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

摘要翻译： 使用六氯二硅烷（Si 2 Cl 6）作为用于形成可能与氧化硅膜的蚀刻速率差异很大的氮化硅膜的Si原料。 氮化硅膜通过LPCVD法形成。

公开(公告)号：US06326658B1

公开(公告)日：2001-12-04

申请号：US09404594

申请日：1999-09-24

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

IPC分类号： H01L27108

CPC分类号： H01L27/10867

摘要： A buried strap is formed after forming an SiC layer on the side surface of a trench in order to suppress the epitaxial growth of Si from the side surface (single crystal Si) of the trench to the buried strap (polycrystalline Si) without causing an increase in the contact resistance in the post process accompanied by high temperature after formation of the buried strap.

摘要翻译： 在沟槽侧面上形成SiC层之后形成掩埋带，以抑制从沟槽的侧表面（单晶Si）到掩埋带（多晶Si）的Si的外延生长而不会增加 在后处理中的接触电阻伴随着形成埋藏带的高温。