公开(公告)号：US20050231286A1

公开(公告)日：2005-10-20

申请号：US11066765

申请日：2005-02-28

申请人： Seiki Gotou ,  Akira Inoue

发明人： Seiki Gotou ,  Akira Inoue

IPC分类号： H03F1/02 ,  H03F1/07 ,  H03F3/193 ,  H03F3/60 ,  H03F3/68 ,  H05K1/05 ,  H05K1/14

CPC分类号： H03F3/60 ,  H03F1/0288 ,  H03F3/604 ,  H05K1/05 ,  H05K1/141

摘要： In a power amplifier a Doherty amplifier is provided with an output higher harmonic reflection circuit that is connected to the output terminal of a first FET chip and sets an even-numbered higher harmonic load of an output signal at the output terminal to be a short-circuit, or at a low impedance approximating a short-circuit, and sets an odd-numbered higher harmonic load of an output signal at the output terminal to be an open-circuit, or a high impedance approximating an open-circuit.

摘要翻译： 在功率放大器中，Doherty放大器设置有输出高次谐波反射电路，其连接到第一FET芯片的输出端，并将输出端的输出信号的偶数高次谐波负载设置为短路， 或接近短路的低阻抗，并且将输出端子处的输出信号的奇数高次谐波负载设置为开路或接近开路的高阻抗。

公开(公告)号：US06917091B2

公开(公告)日：2005-07-12

申请号：US10770414

申请日：2004-02-04

申请人： Akira Inoue ,  Seiki Gotou

发明人： Akira Inoue ,  Seiki Gotou

IPC分类号： H01L21/338 ,  H01L23/482 ,  H01L29/812 ,  H01L29/00

CPC分类号： H01L23/4824 ,  H01L23/4821 ,  H01L24/06 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2924/1306 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A high power semiconductor device including gate electrodes also includes an active region of an approximately rectangular shape, located on a semiconductor substrate; a drain electrode located on the active region; and first and second source electrodes which are disposed on opposite sides to the drain electrode so that the first and second source electrodes face each other across at least some of the gate electrodes. The directions of currents carried by the first and second source electrodes are opposite to each other.

摘要翻译： 包括栅电极的高功率半导体器件还包括位于半导体衬底上的大致矩形形状的有源区; 位于有源区上的漏电极; 以及第一和第二源电极，其设置在与漏电极相对的两侧，使得第一和第二源电极在至少一些栅电极之间彼此面对。 由第一和第二源电极承载的电流的方向彼此相反。

公开(公告)号：US07777571B2

公开(公告)日：2010-08-17

申请号：US12147542

申请日：2008-06-27

申请人： Seiki Gotou ,  Akira Inoue ,  Ko Kanaya ,  Shinsuke Watanabe

发明人： Seiki Gotou ,  Akira Inoue ,  Ko Kanaya ,  Shinsuke Watanabe

IPC分类号： H03F3/191

CPC分类号： H03F3/604 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/19041 ,  H01L2924/19051 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03F2200/237 ,  H03F2200/255 ,  H03F2200/423 ,  H03F2200/429 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A high frequency power amplifier comprises: a multi-finger transistor with transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits respectively connected between the gate electrode of a transistor cell and the input side matching circuit. The resonant circuit resonates at a second harmonic of the operating frequency of the transistor or within a predetermined range of frequencies having a center at the second harmonic of the operating frequency, and becomes a high-impedance load at the second harmonic, or an open load.

摘要翻译： 高频功率放大器包括：具有并联电连接的晶体管单元的多指晶体管; 连接到晶体管单元的栅极的输入侧匹配电路; 以及分别连接在晶体管单元的栅电极和输入侧匹配电路之间的谐振电路。 谐振电路以晶体管的工作频率的二次谐波或在具有工作频率的二次谐波的中心的预定频率范围内谐振，并且变为二次谐波处的高阻抗负载或开路负载 。

公开(公告)号：US07463111B2

公开(公告)日：2008-12-09

申请号：US11316994

申请日：2005-12-27

申请人： Akira Inoue ,  Seiki Gotou

发明人： Akira Inoue ,  Seiki Gotou

IPC分类号： H03H7/38

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： At least one of wiring areas divided by substrate dividing slits includes a region on which none of the strip conductors is located, the region having a U-shape as viewed in plan and enclosing one of the strip conductors on three sides. The length of the enclosed strip conductor is set such that, at a harmonic of a fundamental frequency, the strip line, including the enclosed strip conductor, exhibits very low impedance and acts as a short circuit. The length of the enclosed strip conductor may be set substantially equal to 1/(4n) times the wavelength corresponding to a fundamental frequency, to short circuit the nth harmonic, where n is an integer. Both ends of the U-shaped region are preferably disposed on the side of the surface of the matching circuit substrate closest to a transistor.

摘要翻译： 由基板分割狭缝分割的布线区域中的至少一个包括没有条形导体所位于的区域，该区域在俯视图中为U形，并且在三个侧面上包围一个带状导体。 封闭带状导体的长度被设定为使得在基波的谐波处，包括封闭的带状导体的带状线呈现非常低的阻抗并作为短路。 封闭带状导体的长度可以被设置为基本上等于对应于基本频率的波长的1 /（4n）倍，以使n次谐波短路，其中n是整数。 优选地，U形区域的两端设置在最靠近晶体管的匹配电路基板的表面侧。

公开(公告)号：US07193472B2

公开(公告)日：2007-03-20

申请号：US11066765

申请日：2005-02-28

申请人： Seiki Gotou ,  Akira Inoue

发明人： Seiki Gotou ,  Akira Inoue

IPC分类号： H03F3/68

CPC分类号： H03F3/60 ,  H03F1/0288 ,  H03F3/604 ,  H05K1/05 ,  H05K1/141

摘要： In a power amplifier a Doherty amplifier is provided with an output higher harmonic reflection circuit that is connected to the output terminal of a first FET chip and sets an even-numbered higher harmonic load of an output signal at the output terminal to be a short-circuit, or at a low impedance approximating a short-circuit, and sets an odd-numbered higher harmonic load of an output signal at the output terminal to be an open-circuit, or a high impedance approximating an open-circuit.

摘要翻译： 在功率放大器中，Doherty放大器设置有输出高次谐波反射电路，其连接到第一FET芯片的输出端，并将输出端的输出信号的偶数高次谐波负载设置为短路， 或接近短路的低阻抗，并且将输出端子处的输出信号的奇数高次谐波负载设置为开路或接近开路的高阻抗。

公开(公告)号：US07511575B2

公开(公告)日：2009-03-31

申请号：US11682366

申请日：2007-03-06

申请人： Seiki Gotou ,  Akira Inoue ,  Tetsuo Kunii ,  Toshikazu Oue

发明人： Seiki Gotou ,  Akira Inoue ,  Tetsuo Kunii ,  Toshikazu Oue

IPC分类号： H03F3/68

CPC分类号： H03F3/604 ,  H03F3/211 ,  H03F2200/451 ,  H03F2203/21103 ,  H03F2203/21139 ,  H03F2203/21178

摘要： A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.

摘要翻译： 高频功率放大器具有FET单元，其具有多频形式的单位FET，并且具有输入信号的栅极焊盘，接地的源极焊盘和输出信号的漏极焊盘。 高频处理电路包括分流连接在单元FET的栅极焊盘和接地端之间的串联谐振电路。 串联谐振电路中的两个具有对应于包括在FET元件的工作频带中的频率的第二和高次谐波的各自不同的谐振频率。

公开(公告)号：US20070024371A1

公开(公告)日：2007-02-01

申请号：US11398627

申请日：2006-04-06

申请人： Seiki Gotou ,  Akira Inoue ,  Akira Ohta

发明人： Seiki Gotou ,  Akira Inoue ,  Akira Ohta

IPC分类号： H03F3/68

CPC分类号： H03F3/193 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/00014

摘要： A high frequency power amplifier includes: a multi-finger transistor including transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits, each resonant circuit being connected between a gate electrode of a respective one of the transistor cells and the input side matching circuit. The resonant circuits resonate at a second harmonic of the operational frequency of the transistor or at a frequency within a predetermined range centered at the second harmonic and act as a short circuit or exhibit low impedance as seen from the gate electrode.

公开(公告)号：US20060152300A1

公开(公告)日：2006-07-13

申请号：US11316994

申请日：2005-12-27

申请人： Akira Inoue ,  Seiki Gotou

发明人： Akira Inoue ,  Seiki Gotou

IPC分类号： H03H7/38

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： At least one of wiring areas divided by substrate dividing slits includes a region on which none of the strip conductors is located, the region having a U-shape as viewed in plan and enclosing one of the strip conductors on three sides. The length of the enclosed strip conductor is set such that, at a harmonic of a fundamental frequency, the strip line, including the enclosed strip conductor, exhibits very low impedance and acts as a short circuit. The length of the enclosed strip conductor may be set substantially equal to 1/(4n) times the wavelength corresponding to a fundamental frequency, to short circuit the nth harmonic, where n is an integer. Both ends of the U-shaped region are preferably disposed on the side of the surface of the matching circuit substrate closest to a transistor.

摘要翻译： 由基板分割狭缝分割的布线区域中的至少一个包括没有条形导体所位于的区域，该区域在俯视图中为U形，并且在三个侧面上包围一个带状导体。 封闭带状导体的长度被设定为使得在基波的谐波处，包括封闭的带状导体的带状线呈现非常低的阻抗并作为短路。 封闭带状导体的长度可以被设置为基本上等于对应于基本频率的波长的1 /（4n）倍，以使n次谐波短路，其中n是整数。 优选地，U形区域的两端设置在最靠近晶体管的匹配电路基板的表面侧。

公开(公告)号：US20090237166A1

公开(公告)日：2009-09-24

申请号：US12147542

申请日：2008-06-27

申请人： Seiki Gotou ,  Akira Inoue ,  Ko Kanaya ,  Shinsuke Watanabe

发明人： Seiki Gotou ,  Akira Inoue ,  Ko Kanaya ,  Shinsuke Watanabe

IPC分类号： H03F3/191 ,  H03F3/68

CPC分类号： H03F3/604 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/19041 ,  H01L2924/19051 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03F2200/237 ,  H03F2200/255 ,  H03F2200/423 ,  H03F2200/429 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A high frequency power amplifier comprises: a multi-finger transistor with transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits respectively connected between the gate electrode of a transistor cell and the input side matching circuit. The resonant circuit resonates at a second harmonic of the operating frequency of the transistor or within a predetermined range of frequencies having a center at the second harmonic of the operating frequency, and becomes a high-impedance load at the second harmonic, or an open load.

摘要翻译： 高频功率放大器包括：具有并联电连接的晶体管单元的多指晶体管; 连接到晶体管单元的栅电极的输入侧匹配电路; 以及分别连接在晶体管单元的栅电极和输入侧匹配电路之间的谐振电路。 谐振电路以晶体管的工作频率的二次谐波或在具有工作频率的二次谐波的中心的预定频率范围内谐振，并且变为二次谐波处的高阻抗负载或开路负载 。

公开(公告)号：US07310019B2

公开(公告)日：2007-12-18

申请号：US11398627

申请日：2006-04-06

申请人： Seiki Gotou ,  Akira Inoue ,  Akira Ohta

发明人： Seiki Gotou ,  Akira Inoue ,  Akira Ohta

IPC分类号： H03F3/68

CPC分类号： H03F3/193 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/00014

摘要： A high frequency power amplifier includes: a multi-finger transistor including transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits, each resonant circuit being connected between a gate electrode of a respective one of the transistor cells and the input side matching circuit. The resonant circuits resonate at a second harmonic of the operational frequency of the transistor or at a frequency within a predetermined range centered at the second harmonic and act as a short circuit or exhibit low impedance as seen from the gate electrode.

摘要翻译： 高频功率放大器包括：多指晶体管，其包括并联电连接的晶体管单元; 连接到晶体管单元的栅电极的输入侧匹配电路; 和谐振电路，每个谐振电路连接在晶体管单元的相应一个的栅电极和输入侧匹配电路之间。 谐振电路以晶体管的工作频率的二次谐波或在以二次谐波为中心的预定范围内的频率谐振，并且作为短路或从栅极观察到的低阻抗。