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    PLASMA ETCHING METHOD
    1.
    发明申请
    PLASMA ETCHING METHOD 有权
    等离子体蚀刻法

    公开(公告)号：US20140144876A1

    公开(公告)日：2014-05-29

    申请号：US14235857

    申请日：2012-07-30

    申请人： Akira Nakagawa ,  Fumio Yamazaki ,  Hiromi Mochizuki

    发明人： Akira Nakagawa ,  Fumio Yamazaki ,  Hiromi Mochizuki

    IPC分类号： H05H1/46

    CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/32165 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069

    摘要： A plasma etching method using a plasma etching apparatus including a lower electrode and an upper electrode is provided. The plasma etching method includes a first etching step of performing plasma etching using a first process gas and a second etching step of performing the plasma etching using a second process gas. The adhesion of a radical of the second process gas to an object of processing is less than the adhesion of a radical of the first process gas to the object of processing. While alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that the absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition.

    摘要翻译： 提供了使用包括下电极和上电极的等离子体蚀刻装置的等离子体蚀刻方法。 等离子体蚀刻方法包括使用第一处理气体进行等离子体蚀刻的第一蚀刻步骤和使用第二处理气体进行等离子体蚀刻的第二蚀刻步骤。 第二工艺气体的基团与加工对象的粘附小于第一工艺气体的基团与加工对象的粘附。 在交替地重复开启用于等离子体产生的高频电力的第一条件和关闭高频电力的第二条件时，第二蚀刻步骤向上电极施加负的直流电压，使得绝对 施加电压的值在第二状态的期间比在第一状态的期间更大。

    Plasma etching method
    2.
    发明授权
    Plasma etching method 有权
    等离子蚀刻法

    公开(公告)号：US09034198B2

    公开(公告)日：2015-05-19

    申请号：US14235857

    申请日：2012-07-30

    申请人： Akira Nakagawa ,  Fumio Yamazaki ,  Hiromi Mochizuki

    发明人： Akira Nakagawa ,  Fumio Yamazaki ,  Hiromi Mochizuki

    IPC分类号： H05H1/46 ,  H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3213

    CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/32165 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069

    摘要： A plasma etching method using a plasma etching apparatus including a lower electrode and an upper electrode is provided. The plasma etching method includes a first etching step of performing plasma etching using a first process gas and a second etching step of performing the plasma etching using a second process gas. The adhesion of a radical of the second process gas to an object of processing is less than the adhesion of a radical of the first process gas to the object of processing. While alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that the absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition.

    摘要翻译： 提供了使用包括下电极和上电极的等离子体蚀刻装置的等离子体蚀刻方法。 等离子体蚀刻方法包括使用第一处理气体进行等离子体蚀刻的第一蚀刻步骤和使用第二处理气体进行等离子体蚀刻的第二蚀刻步骤。 第二工艺气体的基团与加工对象的粘附小于第一工艺气体的基团与加工对象的粘附。 在交替地重复开启用于等离子体产生的高频电力的第一条件和关闭高频电力的第二条件时，第二蚀刻步骤向上电极施加负的直流电压，使得绝对 施加电压的值在第二状态的期间比在第一状态的期间更大。

    Method for making IPS cells
    3.
    发明授权
    Method for making IPS cells 有权
    IPS细胞的制备方法

    公开(公告)号：US08951801B2

    公开(公告)日：2015-02-10

    申请号：US13203735

    申请日：2010-02-19

    申请人： Shinya Yamanaka ,  Naoki Goshima ,  Momoko Maekawa ,  Yoshifumi Kawamura ,  Hiromi Mochizuki

    发明人： Shinya Yamanaka ,  Naoki Goshima ,  Momoko Maekawa ,  Yoshifumi Kawamura ,  Hiromi Mochizuki

    IPC分类号： C12N15/00 ,  C07H21/02 ,  C07H21/04

    CPC分类号： C12N5/0696 ,  C12N2501/60 ,  C12N2501/602 ,  C12N2501/603 ,  C12N2501/606

    摘要： Reprogramming substances capable of substituting for Klf4, selected from the group consisting of members of the IRX family (e.g., IRX6), members of the GLIS family (e.g., GLIS1), members of the PTX family (e.g., PITX2), DMRTB1, and nucleic acids that encode the same, are provided. Also provided are a method of producing iPS cells, comprising the step of introducing into a somatic cell both one or more kinds of the above-described nuclear reprogramming substances and a substance capable of inducing iPS cells from a somatic cell when combined with Klf4. Still also provided are iPS cells comprising an extraneous nucleic acid that encodes any one of the above-described nuclear reprogramming substances, that can be obtained by the method, and a method of producing somatic cells by inducing the iPS cells to differentiate.

    摘要翻译： 能够替代Klf4的重编程物质，选自IRX家族成员（如IRX6），GLIS家族成员（如GLIS1），PTX家族成员（如PITX2），DMRTB1和 提供了编码相同的核酸。 还提供了一种生产iPS细胞的方法，其包括将与上述核重编程物质一种或多种物质一起导入体细胞的步骤，以及当与Klf4组合时能够从体细胞诱导iPS细胞的物质。 还提供了包含编码上述核重编程物质中任一种的外源核酸的iPS细胞，其可以通过该方法获得，以及通过诱导iPS细胞分化来产生体细胞的方法。

    NOVEL NUCLEAR REPROGRAMMING SUBSTANCE
    6.
    发明申请
    NOVEL NUCLEAR REPROGRAMMING SUBSTANCE 有权
    新型核化学物质

    公开(公告)号：US20120052583A1

    公开(公告)日：2012-03-01

    申请号：US13203735

    申请日：2010-02-19

    申请人： Shinya Yamanaka ,  Naoki Goshima ,  Momoko Maekawa ,  Yoshifumi Kawamura ,  Hiromi Mochizuki

    发明人： Shinya Yamanaka ,  Naoki Goshima ,  Momoko Maekawa ,  Yoshifumi Kawamura ,  Hiromi Mochizuki

    IPC分类号： C12N15/85 ,  C12N5/071

    CPC分类号： C12N5/0696 ,  C12N2501/60 ,  C12N2501/602 ,  C12N2501/603 ,  C12N2501/606

    摘要： Reprogramming substances capable of substituting for Klf4, selected from the group consisting of members of the IRX family (e.g., IRX6), members of the GLIS family (e.g., GLIS1), members of the PTX family (e.g., PITX2), DMRTB1, and nucleic acids that encode the same, are provided. Also provided are a method of producing iPS cells, comprising the step of introducing into a somatic cell both one or more kinds of the above-described nuclear reprogramming substances and a substance capable of inducing iPS cells from a somatic cell when combined with Klf4. Still also provided are iPS cells comprising an extraneous nucleic acid that encodes any one of the above-described nuclear reprogramming substances, that can be obtained by the method, and a method of producing somatic cells by inducing the iPS cells to differentiate.

    摘要翻译： 能够替代Klf4的重编程物质，选自IRX家族成员（如IRX6），GLIS家族成员（如GLIS1），PTX家族成员（如PITX2），DMRTB1和 提供了编码相同的核酸。 还提供了一种生产iPS细胞的方法，其包括将与上述核重编程物质一种或多种物质一起导入体细胞的步骤，以及当与Klf4组合时能够从体细胞诱导iPS细胞的物质。 还提供了包含编码上述核重编程物质中任一种的外源核酸的iPS细胞，其可以通过该方法获得，以及通过诱导iPS细胞分化来产生体细胞的方法。

    IMAGE-FORMING APPARATUS AND IMAGE-FORMING METHOD
    7.
    发明申请
    IMAGE-FORMING APPARATUS AND IMAGE-FORMING METHOD 审中-公开
    图像形成装置和图像形成方法

    公开(公告)号：US20080001983A1

    公开(公告)日：2008-01-03

    申请号：US11768904

    申请日：2007-06-26

    申请人： Masato Kawakami ,  Hiromi Mochizuki

    发明人： Masato Kawakami ,  Hiromi Mochizuki

    IPC分类号： B41J29/38 ,  B41J2/015

    CPC分类号： B41J2/2114 ,  B41J11/0015 ,  B41J11/007 ,  B41J29/38

    摘要： An image-forming apparatus is provided for formation of a high-quality image without irregularity in the image density independently of the infiltration time of the pretreatment liquid or the delivery speed of the plain paper sheet for the printing. The interval between a pretreatment liquid applicator 30 and printing heads 21-24 is adjusted by a stepping motor 98 driven by a stepping motor control circuit 34 based on the delivery speed data read by a memory controller 68. Thereby an endless belt 90 is allowed to circulate in the direction of the arrow-C or arrow-D. This circulation movement of the endless belt displaces the applicator holder 82 or the pretreatment liquid applicator 30 at an intended distance in the arrow-A direction or the reverse direction along the guide rail 86,88.

    摘要翻译： 提供了一种图像形成装置，用于形成高质量图像，而不管预处理液体的渗透时间或印刷用普通纸的输送速度，图像浓度都不会发生不均匀。 基于由存储器控制器68读取的传送速度数据，通过由步进电动机控制电路34驱动的步进电机98调节预处理液体涂布器30与打印头21-24之间的间隔。 由此，循环带90能够沿箭头C或箭头D的方向循环。 环形带的这种循环运动使涂抹器保持器82或预处理液体施加器30沿着导轨86,88在箭头A方向或相反方向上移动预期距离。