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    Production of short fiber silica
    1.
    发明授权
    Production of short fiber silica 有权
    生产短纤维二氧化硅

    公开(公告)号：US06455154B1

    公开(公告)日：2002-09-24

    申请号：US09560984

    申请日：2000-04-28

    申请人： Akira Nakashima ,  Kazuaki Inoue ,  Ryo Muraguchi ,  Michio Komatsu

    发明人： Akira Nakashima ,  Kazuaki Inoue ,  Ryo Muraguchi ,  Michio Komatsu

    IPC分类号： D02G300

    CPC分类号： C08G77/02 ,  C09D183/02 ,  Y10T428/2904 ,  Y10T428/2907 ,  Y10T428/2918 ,  Y10T428/31663

    摘要： A coating liquid for forming porous silica coating, comprising a product of reaction between a short fiber silica and a hydrolyzate of an alkoxysilane of the formula XnSi(OR)4-n or a halogenated silane of the formula XnSiX′4-n (in the formula, X represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; X′ represents a chlorine atom or a bromine atom; and n is an integer of 0 to 3). A coated substrate comprising a porous silica coating film formed from the above coating liquid for forming porous silica coating. A short fiber silica having an average diameter (D) of 10 to 30 nm, a length (L) of 30 to 100 nm and an aspect ratio (L/D) of 3 to 10. The above coating liquid for forming porous silica coating enables forming an insulating film which is excellent in adherence to a substrate surface, mechanical strength, chemical resistance and crack resistance and enables flattening irregularities of a substrate surface to a high degree. The coating film of the coated substrate has the above excellent properties.

    摘要翻译： 一种用于形成多孔二氧化硅涂层的涂布液，包括短纤维二氧化硅和式XnSi（OR）4-n的烷氧基硅烷的水解产物或式XnSiX'4-n的卤代硅烷（在 式中，X表示氢原子，氟原子，碳原子数1〜8的烷基，芳基或乙烯基; R表示氢原子，碳原子数1〜8的烷基，芳基或 乙烯基; X'表示氯原子或溴原子，n表示0〜3的整数。 一种涂覆基材，包括由用于形成多孔二氧化硅涂层的上述涂布液形成的多孔二氧化硅涂膜。 平均直径（D）为10〜30nm，长度（L）为30〜100nm，纵横比（L / D）为3〜10的短纤维二氧化硅。上述用于形成多孔二氧化硅涂层的涂布液 能够形成对基板表面的粘附性优异的机械强度，耐化学性和抗裂纹性的绝缘膜，能够高度地使基板表面变得平坦化。 涂布基材的涂膜具有上述优异的性能。

    Coating liquid for forming porous silica coating, coated substrate and short fiber silica
    2.
    发明授权
    Coating liquid for forming porous silica coating, coated substrate and short fiber silica 有权
    用于形成多孔二氧化硅涂层，涂布基材和短纤维二氧化硅的涂布液

    公开(公告)号：US6083314A

    公开(公告)日：2000-07-04

    申请号：US130043

    申请日：1998-08-06

    申请人： Akira Nakashima ,  Kazuaki Inoue ,  Ryo Muraguchi ,  Michio Komatsu

    发明人： Akira Nakashima ,  Kazuaki Inoue ,  Ryo Muraguchi ,  Michio Komatsu

    IPC分类号： C08L83/04 ,  C08G77/02 ,  C09D7/12 ,  C09D183/02 ,  C09D183/04 ,  C09D183/07 ,  C09D183/05 ,  C09D183/06 ,  C09D183/08

    CPC分类号： C08G77/02 ,  C09D183/02 ,  Y10T428/2904 ,  Y10T428/2907 ,  Y10T428/2918 ,  Y10T428/31663

    摘要： A coating liquid for forming porous silica coating, comprising a product of reaction between a short fiber silica and a hydrolyzate of an alkoxysilane of the formula X.sub.n Si(OR).sub.4-n or a halogenated silane of the formula X.sub.n SiX'.sub.4-n (in the formula, X represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; X' represents a chlorine atom or a bromine atom; and n is an integer of 0 to 3). A coated substrate comprising a porous silica coating film formed from the above coating liquid for forming porous silica coating. A short fiber silica having an average diameter (D) of 10 to 30 nm, a length (L) of 30 to 100 nm and an aspect ratio (L/D) of 3 to 10. The above coating liquid for forming porous silica coating enables forming an insulating film which is excellent in adherence to a substrate surface, mechanical strength, chemical resistance and crack resistance and enables flattening irregularities of a substrate surface to a high degree. The coating film of the coated substrate has the above excellent properties.

    摘要翻译： 一种用于形成多孔二氧化硅涂层的涂布液，包括短纤维二氧化硅和式XnSi（OR）4-n的烷氧基硅烷的水解产物或式XnSiX'4-n的卤代硅烷（在 式中，X表示氢原子，氟原子，碳原子数1〜8的烷基，芳基或乙烯基; R表示氢原子，碳原子数1〜8的烷基，芳基或 乙烯基; X'表示氯原子或溴原子，n表示0〜3的整数。 一种涂覆基材，包括由用于形成多孔二氧化硅涂层的上述涂布液形成的多孔二氧化硅涂膜。 平均直径（D）为10〜30nm，长度（L）为30〜100nm，纵横比（L / D）为3〜10的短纤维二氧化硅。上述用于形成多孔二氧化硅涂层的涂布液 能够形成对基板表面的粘附性优异的机械强度，耐化学性和抗裂纹性的绝缘膜，能够高度地使基板表面变得平坦化。 涂布基材的涂膜具有上述优异的性能。

    Thin film-forming method and thin film-forming apparatus therefor
    3.
    发明授权
    Thin film-forming method and thin film-forming apparatus therefor 失效
    薄膜形成方法及其薄膜形成装置

    公开(公告)号：US6086699A

    公开(公告)日：2000-07-11

    申请号：US79112

    申请日：1998-05-14

    申请人： Akira Nakashima ,  Atsushi Tonai ,  Ryo Muraguchi ,  Michio Komatsu ,  Katsuyuki Machida ,  Hakaru Kyuragi ,  Kazuo Imai

    发明人： Akira Nakashima ,  Atsushi Tonai ,  Ryo Muraguchi ,  Michio Komatsu ,  Katsuyuki Machida ,  Hakaru Kyuragi ,  Kazuo Imai

    IPC分类号： H01L21/3205 ,  B05D1/28 ,  H01L21/00 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  B32B33/00 ,  B05D5/00 ,  B05D7/24 ,  B05D7/26

    CPC分类号： H01L21/6715 ,  B05D1/28 ,  H01L21/67132

    摘要： Disclosed is a thin film-forming apparatus comprising a coating liquid feed means 6 for feeding a thin film-forming coating liquid onto a surface of a transfer roll 2, a transfer means 4 including the transfer roll 2 a surface of which is coated with the thin film-forming coating liquid fed from the coating liquid feed means to form a transfer thin film 8, and a substrate conveying means 16 for continuously conveying a substrate 9 under the transfer roll, a surface of said substrate 9 to be provided with a thin film, wherein the transfer means is so fabricated that the transfer roll surface having the transfer thin film thereon is closely contacted with the surface of the substrate conveyed by the substrate conveying means, to transfer the transfer thin film formed on the transfer roll surface to the substrate surface. Also disclosed is a thin film-forming method using the thin film-forming apparatus. By the apparatus and the method, formation of a planar thin film on a substrate such as a semiconductor wafer can be carried out continuously, stably and at a low cost, and quality lowering of the thin film and property change thereof with time caused by adherence of impurities to the thin film or contamination of the thin film with impurities are avoidable. Moreover, the apparatus and the method are applicable to large-sized substrates.

    摘要翻译： 公开了一种薄膜形成装置，其包括用于将薄膜形成涂布液供给到转印辊2的表面上的涂布液供给装置6，包括转印辊2的转印装置4，转印辊2的表面涂覆有 从涂布液供给装置供给的薄膜形成用涂布液，形成转印薄膜8，以及用于在转印辊下连续输送基板9的基板输送机构16，所述基板9的表面设置有薄的 膜，其中转印装置被制造成使得其上具有转印薄膜的转印辊表面与由基板输送装置输送的基板的表面紧密接触，以将形成在转印辊表面上的转印薄膜转印到 基材表面。 还公开了使用该薄膜形成装置的薄膜形成方法。 通过该装置和方法，可以连续，稳定地且低成本地在诸如半导体晶片的基板上形成平面薄膜，并且随着粘附时间的推移，薄膜的质量降低及其性能变化 杂质对薄膜的污染或杂质污染薄膜是可以避免的。 此外，该装置和方法适用于大尺寸基板。

    Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film
    4.
    发明授权
    Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film 有权
    形成具有低介电常数的含二氧化硅的涂膜和涂覆有这种膜的半导体衬底的方法

    公开(公告)号：US06599846B2

    公开(公告)日：2003-07-29

    申请号：US09914418

    申请日：2001-08-28

    申请人： Michio Komatsu ,  Akira Nakashima ,  Miki Egami ,  Ryo Muraguchi

    发明人： Michio Komatsu ,  Akira Nakashima ,  Miki Egami ,  Ryo Muraguchi

    IPC分类号： H01L2131

    CPC分类号： H01L21/316

    摘要： The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350° C., and then (c) curing the thus treated film at 350 to 450° C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method. The above step (b) for the thermal treatment is preferably conducted at 150 to 350° C. for 1 to 3 minutes in an air atmosphere. Also, the above curing step (c) is preferably conducted by placing the semiconductor substrate on a hot plate kept at 350 to 450° C. According to the present invention, a semiconductor substrate coated with a silica-containing film having characteristics of a low-dielectric constant of 3 or less, a low moisture adsorptivity and high film strength without causing any damage to the metal wiring arranged on the substrate, can be obtained steadily.

    摘要翻译： 本发明提供一种在半导体基板上稳定地形成具有3以下的低介电常数的含二氧化硅的膜的方法，该方法包括以下步骤：（a）将形成含二氧化硅的膜的涂布液涂布到低 （b）在50至350℃下加热涂覆的膜，然后（c）在350至450℃下在含有500至500℃的惰性气体气氛中固化如此处理的膜 15000体积ppm的氧，并且还提供具有通过上述方法形成的含二氧化硅的半导体衬底。用于热处理的上述步骤（b）优选在150-350℃下进行1至3分钟 在空气气氛中。 此外，上述固化步骤（c）优选通过将半导体衬底放置在保持在350至450℃的热板上来进行。根据本发明，涂覆了具有低特性的含二氧化硅的膜的半导体衬底 - 可以稳定地获得3或更小的吸湿性和低膜强度，而不会对布置在基底上的金属布线造成任何损坏。

    Method of forming particle layer on substrate, method of planarizing irregular surface of substrate and particle-layer-formed substrate
    5.
    发明授权
    Method of forming particle layer on substrate, method of planarizing irregular surface of substrate and particle-layer-formed substrate 失效
    在基板上形成颗粒层的方法，平面化基板和颗粒层形成的基板的不规则表面的方法

    公开(公告)号：US6090446A

    公开(公告)日：2000-07-18

    申请号：US624537

    申请日：1996-04-12

    申请人： Akira Nakashima ,  Michio Komatsu ,  Kenji Ohno ,  Kuniharu Teramoto ,  Kazuaki Inoue

    发明人： Akira Nakashima ,  Michio Komatsu ,  Kenji Ohno ,  Kuniharu Teramoto ,  Kazuaki Inoue

    IPC分类号： B01J19/00 ,  B05D1/20 ,  G11B5/84 ,  G11B7/26 ,  H01L21/768 ,  B05D5/00 ,  B05D1/18 ,  B32B3/00

    CPC分类号： B05D1/20 ,  Y10T428/24372 ,  Y10T428/24893

    摘要： The present invention provides a method of forming on a substrate a particle layer highly adherent to the substrate, which comprises the steps of spreading a dispersion (I) comprising a dispersing medium and, dispersed therein, solid particles being surface treated with a compound acting as a binder on a liquid (II) having a specific gravity higher than that of the dispersing medium, said liquid (II) being immiscible with the dispersing medium, subsequently removing the dispersing medium from the dispersion (I) to thereby arrange the solid particles on the liquid (II) so that a particle layer is formed on the liquid (II) and thereafter transferring the particle layer onto a substrate. Moreover, the present invention provides a method of planarizing an irregular surface of a substrate, which comprises transferring the above particle layer to an irregular surface of a substrate and removing parts of the particle layer formed on protrudent parts of the substrate to thereby planarize the irregular surface of the substrate and also provides a particle-layer-formed substrate comprising a substrate and, superimposed on a surface thereof, the particle layer obtained by each of the above methods.

    摘要翻译： PCT No.PCT / JP95 / 01610 Sec。 371日期：1996年4月12日 102（e）日期1996年4月12日PCT提交1995年8月11日PCT公布。 出版物WO96 / 04998 日本1996年2月22日本发明提供了在基材上形成与基材高度附着的颗粒层的方法，其包括以下步骤：将包含分散介质的分散体（I）铺展并分散在其中进行表面处理的固体颗粒 在比重高于分散介质的液体（II）上作为粘合剂的化合物，所述液体（II）与分散介质不混溶，随后从分散体（I）中除去分散介质，由此 将固体颗粒布置在液体（II）上，使得在液体（II）上形成颗粒层，然后将颗粒层转移到基材上。 此外，本发明提供一种平面化基板的不规则表面的方法，其包括将上述颗粒层转移到基板的不规则表面，并除去形成在基板突出部分上的颗粒层的部分，从而平坦化不规则 并且还提供了包含基材的颗粒层形成的基材，并且在其表面上叠加通过上述方法获得的颗粒层​​。

    Method for forming amorphous silica-based coating film with low dielectric constant and thus obtained amorphous silica-based coating film
    8.
    发明授权
    Method for forming amorphous silica-based coating film with low dielectric constant and thus obtained amorphous silica-based coating film 有权
    用于形成具有低介电常数的无定形二氧化硅基涂膜的方法，由此获得无定形二氧化硅基涂膜

    公开(公告)号：US08227028B2

    公开(公告)日：2012-07-24

    申请号：US12310486

    申请日：2007-07-11

    申请人： Miki Egami ,  Akira Nakashima ,  Michio Komatsu

    发明人： Miki Egami ,  Akira Nakashima ,  Michio Komatsu

    IPC分类号： B05D3/02 ,  B05D3/04 ,  H01L29/00

    CPC分类号： C09D1/00 ,  C09D4/00 ,  H01L21/316 ,  C08G77/04

    摘要： A method of forming on a substrate an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, which comprises, as a typical one, the steps of; (a) coating on the substrate a liquid composition containing hydrolysate of an organic silicon compound or compounds hydrolyzed in the presence of tetraalkylammonium hydroxide (TAAOH); (b) setting the substrate in a chamber and then drying a coating film formed on the substrate at a temperature in the range from 25 to 340° C.; (c) heating the coating film at a temperature in the range from 105 to 450° C. with introduction of a superheated steam having such a temperature into the chamber, and (d) curing the coating film at a temperature in the range from 350 to 450° C. with introduction of a nitrogen gas into the chamber.

    摘要翻译： 一种在基板上形成介电常数低于3.0或更低的无定形二氧化硅基涂层以及3.0GPa或更高的膜强度（杨氏模量）的方法，其中典型的步骤包括： （a）在基材上涂覆含有有机硅化合物的水解产物或在四烷基氢氧化铵（TAAOH））存在下水解的化合物的液体组合物; （b）将基板设置在室中，然后在25至340℃的温度范围内干燥形成在基板上的涂膜。 （c）在105至450℃的温度范围内加热涂膜，并将具有这种温度的过热蒸汽引入室中，和（d）在350℃的温度下固化涂膜 至450℃，同时将氮气引入室中。