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    IC wiring connecting method and resulting article
    3.
    发明授权
    IC wiring connecting method and resulting article 失效
    IC接线方式及其结果

    公开(公告)号：US4868068A

    公开(公告)日：1989-09-19

    申请号：US32753

    申请日：1987-03-31

    申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

    发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

    IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40

    CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

    摘要： A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

    摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而沉积在孔的表面上的区域和互连孔的区域，以形成导电金属膜， 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

    Apparatus for ion beam work
    4.
    发明授权
    Apparatus for ion beam work 失效
    离子束工作装置

    公开(公告)号：US4683378A

    公开(公告)日：1987-07-28

    申请号：US754930

    申请日：1985-07-15

    申请人： Akira Shimase ,  Hiroshi Yamaguchi ,  Satoshi Haraichi ,  Tateoki Miyauchi

    发明人： Akira Shimase ,  Hiroshi Yamaguchi ,  Satoshi Haraichi ,  Tateoki Miyauchi

    IPC分类号： H01J37/28 ,  G01N23/225 ,  G21K5/04 ,  H01J37/22 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027 ,  H01L21/265 ,  H01L21/30 ,  H01L21/66 ,  H01J37/302

    CPC分类号： H01J37/3056 ,  H01J37/3005 ,  H01J37/304

    摘要： This invention discloses an ion beam work apparatus which comprises ion mean radiation means for focusing and radiating an ion beam extracted from an ion source to a target put on a moving mechanism, and scanning two-dimensionally the radiation position; secondary particle detection means for detecting the secondary particles generated from the target upon radiation of the ion beam; and superposition-display means for superposing the secondary particle image with a different kind of image containing such information that is not contained in the secondary particle image, and displaying the resulting image; and which can accurately position the beam radiation position to lower wiring layers of the target such as a semiconductor device that can not be observed by the secondary particle image obtained by scanning the focused ion beam.

    摘要翻译： 本发明公开了一种离子束加工装置，其包括离子平均辐射装置，用于聚焦和辐射从离子源提取的离子束到放置在移动机构上的靶，并且二维地扫描辐射位置; 二次粒子检测装置，用于在辐射离子束时检测从靶产生的二次粒子; 以及叠加显示装置，用于将二次粒子图像与包含不包含在二次粒子图像中的信息的不同种类的图像叠加，并显示所得到的图像; 并且可以将射束放射位置精确地定位到目标物的下布线层，例如通过扫描聚焦离子束而获得的二次粒子图像不能观察到的半导体器件。

    IC wiring connecting method using focused energy beams
    5.
    发明授权
    IC wiring connecting method using focused energy beams 失效
    IC接线方式采用聚焦能量束

    公开(公告)号：US5824598A

    公开(公告)日：1998-10-20

    申请号：US561310

    申请日：1995-11-21

    申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

    发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

    IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40

    CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

    摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

    摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

    IC wiring connecting method and apparatus
    6.
    发明授权
    IC wiring connecting method and apparatus 失效
    IC接线方法和装置

    公开(公告)号：US5472507A

    公开(公告)日：1995-12-05

    申请号：US238888

    申请日：1994-05-06

    申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

    发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

    IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40 ,  C23C16/00

    CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

    摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

    摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

    Method and apparatus for forming film by ion beam
    10.
    发明授权
    Method and apparatus for forming film by ion beam 失效
    用离子束形成薄膜的方法和装置

    公开(公告)号：US4687939A

    公开(公告)日：1987-08-18

    申请号：US668843

    申请日：1984-11-06

    申请人： Tateoki Miyauchi ,  Hiroshi Yamaguchi ,  Mikio Hongo ,  Katsuro Mizukoshi ,  Akira Shimase ,  Ryohei Satoh

    发明人： Tateoki Miyauchi ,  Hiroshi Yamaguchi ,  Mikio Hongo ,  Katsuro Mizukoshi ,  Akira Shimase ,  Ryohei Satoh

    IPC分类号： C23C14/48 ,  C23C14/22 ,  H01J37/305 ,  H01J37/317 ,  H01J37/00

    CPC分类号： H01J37/3056 ,  C23C14/221 ,  H01J37/3178 ,  H01J2237/31749

    摘要： An ion beam apparatus which comprises an enclosure defining a chamber of high vacuum. A crucible for producing vapor of a material, ionizing means, ion accelerating means, and a substrate to be deposited with the vaporized material to thereby form a film thereon are disposed within the chamber. An accelerating voltage is applied across the crucible and the accelerating means such that the crucible is of positive polarity while the accelerating means is of negative polarity. The material contained in the crucible is vaporized by heating. A pressure difference is maintained between the vapor pressure within the crucible and the vacuum chamber. The crucible is provided with a small hole for ejecting the vapor of the material into the vacuum chamber to thereby form atom clouds referred to as clusters under adiabatic expansion and supercooling, a part of the clusters being ionized through irradiation of electrons by the ionizing means and accelerated by the accelerating means so that the ionized and accelerated clusters deposit on the substrate to form a thin film thereon. The apparatus further comprises electrostatic optical system interposed between the cluster ionizing region and the substrate to be deposited with the ionized clusters, wherein the electrostatic optical system serves to focus the ionized clusters onto the element to form the thin film thereon through deposition of the ionized clusters.

    摘要翻译： 一种离子束装置，其包括限定高真空室的外壳。 用于产生材料的蒸气的坩埚，离子化装置，离子加速装置以及待蒸发的材料沉积以形成其上的膜的基板设置在室内。 在坩埚和加速装置之间施加加速电压，使得坩埚具有正极性，而加速装置是负极性的。 包含在坩埚中的材料通过加热而蒸发。 在坩埚内的蒸汽压力与真空室之间保持压力差。 该坩埚设置有用于将材料的蒸气喷射到真空室中的小孔，从而在绝热膨胀和过冷却下形成称为簇的原子云，通过电离装置照射电子而使部分簇离子化; 通过加速装置加速，使得电离和加速的团簇沉积在基底上以在其上形成薄膜。 该装置还包括插入群集电离区域和要沉积离子簇的基板之间的静电光学系统，其中静电光学系统用于将离子化的聚集体聚集到元件上以通过沉积离子簇而在其上形成薄膜 。