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23 条记录 (耗时 0.031 秒)

    Projecting apparatus
    3.
    发明授权
    Projecting apparatus 失效
    投影仪

    公开(公告)号：US4420233A

    公开(公告)日：1983-12-13

    申请号：US381675

    申请日：1982-05-24

    申请人： Mineo Nomoto ,  Katsuhiro Iwashita ,  Toru Otsubo ,  Susumu Aiuchi

    发明人： Mineo Nomoto ,  Katsuhiro Iwashita ,  Toru Otsubo ,  Susumu Aiuchi

    IPC分类号： G03B13/36 ,  G02B7/28 ,  G03B3/10 ,  G03F7/20 ,  G03F7/207 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G03B27/34 ,  G03B21/28

    CPC分类号： G03F7/70891 ,  G03B3/10 ,  G03F9/70

    摘要： A projecting apparatus for forming an image of a mask on a wafer by a projector of a unit magnification reflection system having a concave spherical mirror and a convex spherical mirror. The distance from the projector to the mask or the upper side of a mask holder for holding the mask and the distance from the projector to the wafer are measured. An error of the image-forming position is computed from the distance measurements. At least one of the mask, the wafer and the projector is moved along the direction of projection in a manner to eliminate the error of the image-forming position computed, thus attaining automatic focus adjustment.

    摘要翻译： 一种用于通过具有凹球面镜和凸球面镜的单元放大反射系统的投影仪在晶片上形成掩模图像的投影设备。 测量从投影仪到掩模的距离或用于保持面罩的掩模支架的上侧以及从投影仪到晶片的距离。 从距离测量计算图像形成位置的误差。 掩模，晶片和投影仪中的至少一个沿着投影方向移动，以消除所计算的图像形成位置的误差，从而获得自动聚焦调整。

    Continuous sputtering apparatus
    4.
    发明授权
    Continuous sputtering apparatus 失效
    连续溅射装置

    公开(公告)号：US4675096A

    公开(公告)日：1987-06-23

    申请号：US645671

    申请日：1984-08-30

    申请人： Hideki Tateishi ,  Tamotsu Shimizu ,  Susumu Aiuchi ,  Katsuhiro Iwashita ,  Hiroshi Nakamura

    发明人： Hideki Tateishi ,  Tamotsu Shimizu ,  Susumu Aiuchi ,  Katsuhiro Iwashita ,  Hiroshi Nakamura

    IPC分类号： B65G49/07 ,  C23C14/34 ,  C23C14/56 ,  H01L21/203 ,  C23C14/36

    CPC分类号： C23C14/566 ,  C23C14/568

    摘要： A continuous sputtering apparatus comprising a main vacuum chamber, one loading station and a plurality of process stations capable of having their pressures controlled separately. The process station includes a sub vacuum chamber capable of being in communication with the main vacuum chamber through an opening and an evacuation port. The loading station and the process stations are arranged to be spaced with equal angles. Substrate holders are provided to face the stations and are rotated by said equal angle in a time. The substrate holder opens and closes the opening of the sub vacuum chamber to serve as a gate valve.

    摘要翻译： 一种连续溅射装置，包括主真空室，一个装载站和能够分别控制其压力的多个处理站。 处理站包括能够通过开口和排气口与主真空室连通的副真空室。 装载站和处理站被布置为以相等角度间隔开。 基板保持器被设置成面对车站，并且在一段时间内以相等的角度旋转。 基板保持器打开和关闭副真空室的开口以用作闸阀。

    Apparatus for performing continuous treatment in vacuum
    5.
    发明授权
    Apparatus for performing continuous treatment in vacuum 失效
    用于在真空中进行连续处理的装置

    公开(公告)号：US4405435A

    公开(公告)日：1983-09-20

    申请号：US296314

    申请日：1981-08-26

    申请人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

    发明人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

    IPC分类号： B01J3/00 ,  C23C14/56 ,  C23C15/00

    CPC分类号： B01J3/006 ,  C23C14/566 ,  Y10S414/137 ,  Y10S414/139

    摘要： An apparatus for performing continuous treatment in vacuum including an inlet chamber, a first intermediate chamber, at least one vacuum treating chamber, a second intermediate chamber and a withdrawing chamber arranged in the indicated order in a direction in which base plates are successively transferred. An opening device normally closed and opened when a base plate is transferred therethrough is mounted on a wall at the inlet of the inlet chamber, between the adjacent chambers and on a wall at the outlet side of the withdrawing chamber. A conveyor device for conveying each base plate in a horizontal direction through the opening device is mounted in each of the chambers, and an evacuating device is also mounted in each chamber. A base plate storing device for storing a plurality of base plates in a magazine is mounted in the first and second intermediate chambers. At least one vacuum treating device is mounted in the vacuum treating chamber.

    摘要翻译： 一种用于在真空中进行连续处理的装置，包括入口室，第一中间室，至少一个真空处理室，第二中间室和排出室，其按照依次传送基板的方向以指示的顺序排列。 安装在入口室入口的壁上，在相邻的室之间和在抽出室的出口侧的壁上的壁上安装有一个通常关闭和打开底板的打开装置。 用于通过打开装置沿水平方向输送每个基板的输送装置安装在每个室中，并且排气装置也安装在每个室中。 在第一和第二中间室中安装有用于将多个基板存储在盒中的基板存储装置。 至少一个真空处理装置安装在真空处理室中。

    Alignment apparatus
    6.
    发明授权
    Alignment apparatus 失效
    校准装置

    公开(公告)号：US4170418A

    公开(公告)日：1979-10-09

    申请号：US689818

    申请日：1976-05-25

    申请人： Susumu Aiuchi ,  Minoru Ikeda ,  Yoshio Matsumoto

    发明人： Susumu Aiuchi ,  Minoru Ikeda ,  Yoshio Matsumoto

    IPC分类号： G03B27/32 ,  G03F9/00 ,  G05D3/12 ,  H01L21/027 ,  H01L21/30 ,  G01B11/26

    CPC分类号： G03F9/70

    摘要： An alignment apparatus, in which a mask is overlaid on a wafer and a relative displacement between the wafer and a target pattern formed on the mask is detected to effect alignment thereof, comprises a slit frame adapted to reciprocate in a direction substantially parallel to the top surface of the mask and having a slit formed therein, an illumination optical system for illuminating the target pattern, an image formation optical system for forming the image of the target pattern onto the slit of the slit frame, a light sensing element mounted on the slit frame for detecting the target pattern image formed by the image formation optical system through the slit to convert the image into an electric signal, and a displacement detector for detecting the amount of movement of the reciprocation of the slit frame to convert the amount of movement into a position signal which the light sensing element scans, whereby the output signals from the displacement detector and the light sensing element are used to detect the relative position between the mask and the target pattern on the wafer and the mask is moved relative to the wafer such that the relative displacement amount becomes zero.

    摘要翻译： 其中掩模覆盖在晶片上并且在晶片和形成在掩模上的目标图案之间的相对位移被检测以对准其中的对准装置，包括适于沿基本上平行于顶部的方向往复运动的狭缝框架 表面，其中形成有狭缝，用于照射目标图案的照明光学系统，用于将目标图案的图像形成在狭缝框的狭缝上的图像形成光学系统，安装在狭缝上的光感测元件 框架，用于通过狭缝检测由图像形成光学系统形成的目标图案图像，以将图像转换为电信号;以及位移检测器，用于检测狭缝框架的往复运动量以将移动量转换为 光感测元件扫描的位置信号，从而来自位移检测器和感光元件的输出信号 nt用于检测晶片上的掩模和目标图案之间的相对位置，并且掩模相对于晶片移动，使得相对位移量变为零。

    Method for forming tapered films
    9.
    发明授权
    Method for forming tapered films 失效
    形成锥形膜的方法

    公开(公告)号：US4536419A

    公开(公告)日：1985-08-20

    申请号：US474032

    申请日：1983-03-10

    申请人： Hitoshi Kubota ,  Minoru Tanaka ,  Susumu Aiuchi

    发明人： Hitoshi Kubota ,  Minoru Tanaka ,  Susumu Aiuchi

    IPC分类号： C23C14/04 ,  C23C11/00 ,  C23C13/00

    CPC分类号： C23C14/044

    摘要： Method for forming thin films on a substrate by using a mask through dry process wherein the substrate and the mask are moved relative to each other at least once for the formation of a thin film before the thickness of the thin film being formed on the substrate reaches a predetermined value, so that the formed thin film has an outer edge partly or entirely contoured stepwise.

    摘要翻译： 通过使用通过干法的掩模在基板上形成薄膜的方法，其中在形成薄膜的薄膜的厚度在形成在基板上的厚度达到之前，基板和掩模相对于彼此移动至少一次以形成薄膜 使得所形成的薄膜具有部分或全部轮廓的外边缘。

    Dry-etching apparatus
    10.
    发明授权
    Dry-etching apparatus 失效
    干式蚀刻装置

    公开(公告)号：US4487678A

    公开(公告)日：1984-12-11

    申请号：US597749

    申请日：1984-04-06

    申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

    发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

    IPC分类号： H01J37/18 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  C23C15/00

    CPC分类号： H01L21/302 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67745

    摘要： The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.

    摘要翻译： 本发明涉及一种用于蚀刻形成在晶片上的铝布线膜的干蚀刻装置，更具体地说涉及一种能够在其干蚀刻期间去除沉积在晶片表面上的氯化物的干蚀刻装置，以及 作为抗蚀剂膜，而不必将晶片取出。 该干式蚀刻装置设置有蚀刻室，通过闸阀附着到蚀刻室的真空室以及与真空前厅连接的后处理室。 该设备被形成为将去除到真空前厅的蚀刻的晶片从其中被送到后处理室，然后将经后处理的晶片再次移至真空前厅，然后从其中移除到大气中。