公开(公告)号：US4933565A

公开(公告)日：1990-06-12

申请号：US216834

申请日：1988-07-08

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

IPC分类号： G01Q10/00 ,  G01Q70/14 ,  G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F1/74 ,  G03F1/22

摘要： The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a circuit pattern having a defective portion located under the region or setting this circuit pattern to the state near the exposure; detecting one of the secondary electrons, secondary ions, reflected electrons, or absorbing current generated from that region and detecting a true defective position. Then positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion thereby correcting the defect.

公开(公告)号：US4925755A

公开(公告)日：1990-05-15

申请号：US152159

申请日：1988-02-04

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Akira Shimase ,  Satoshi Haraichi ,  Susumu Aiuchi ,  Nobuyuki Akiyama ,  Shinji Kuniyoshi ,  Takeshi Kimura

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Akira Shimase ,  Satoshi Haraichi ,  Susumu Aiuchi ,  Nobuyuki Akiyama ,  Shinji Kuniyoshi ,  Takeshi Kimura

IPC分类号： G03F1/00 ,  G03F1/72 ,  G03F1/74 ,  H01L21/027

CPC分类号： G03F1/74 ,  G03F1/22

摘要： A method of correcting a circuit pattern such as an X-ray mask, carried out by first preparing a circuit pattern structure where a circuit pattern on a conductive film is coated with a protective film, then forming a hole or a slit by irradiating a high-intensity focused ion beam to a dropout defective portion in the circuit pattern of the circuit pattern structure, and plating such hole or slit while utilizing the conductive film as a plating electrode, thereby forming a metal frame to correct the dropout defective portion.

公开(公告)号：US5497034A

公开(公告)日：1996-03-05

申请号：US318267

申请日：1994-10-05

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40 ,  H01L29/46

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

公开(公告)号：US4868068A

公开(公告)日：1989-09-19

申请号：US32753

申请日：1987-03-31

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而沉积在孔的表面上的区域和互连孔的区域，以形成导电金属膜， 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US5824598A

公开(公告)日：1998-10-20

申请号：US561310

申请日：1995-11-21

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US5472507A

公开(公告)日：1995-12-05

申请号：US238888

申请日：1994-05-06

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40 ,  C23C16/00

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US5116782A

公开(公告)日：1992-05-26

申请号：US455155

申请日：1989-12-22

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Tateoki Miyauchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Tateoki Miyauchi

IPC分类号： B82B3/00 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  B82Y99/00 ,  C23F4/00 ,  G01N37/00 ,  G01Q30/04 ,  G01Q30/20 ,  G01Q60/10 ,  G01Q80/00 ,  G03F1/00 ,  G03F1/68 ,  G03F1/72 ,  G11B9/00 ,  G11B9/14 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

CPC分类号： C23C16/45544 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C16/047 ,  C23C16/45536 ,  G03F1/86 ,  G11B9/14 ,  H01J37/3056 ,  H01L21/30 ,  B82Y10/00 ,  Y10S148/045 ,  Y10S977/855 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/859 ,  Y10S977/869 ,  Y10S977/875

摘要： A method and apparatus for processing a fine pattern of a sample of one of an electronic device, molecular device and bioelement device, wherein a needle having a sharpened tip is disposed in opposed relation to the sample with a gap therebetween. A voltage is applied between the needle and the sample so as to enable a tunnel current and/or a field emission current to flow therebetween and the fine pattern is provided to correct the fine pattern by effecting at least one of removal, repositioning, annealing and film formation of at least one of individual atoms and individual molecules.

公开(公告)号：US4983540A

公开(公告)日：1991-01-08

申请号：US273012

申请日：1988-11-18

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

IPC分类号： H01L21/20 ,  G01Q30/16 ,  G01Q60/44 ,  H01J37/08 ,  H01J37/305 ,  H01L21/203 ,  H01L21/205 ,  H01L21/263 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/338 ,  H01L21/822 ,  H01L21/8252 ,  H01L29/06 ,  H01L29/15 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  H01J37/08 ,  H01L21/2633 ,  H01L21/26546 ,  H01L21/8221 ,  H01L21/8252 ,  H01L29/151 ,  Y10S148/046 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/16 ,  Y10S438/962

摘要： An ion beam (113) focused into a diameter of at most 0.1 .mu.m bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.

公开(公告)号：US5113072A

公开(公告)日：1992-05-12

申请号：US597354

申请日：1990-10-10

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

IPC分类号： H01L21/20 ,  G01Q30/16 ,  G01Q60/44 ,  H01J37/08 ,  H01J37/305 ,  H01L21/203 ,  H01L21/205 ,  H01L21/263 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/338 ,  H01L21/822 ,  H01L21/8252 ,  H01L29/06 ,  H01L29/15 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  H01J37/08 ,  H01L21/2633 ,  H01L21/26546 ,  H01L21/8221 ,  H01L21/8252 ,  H01L29/151 ,  Y10S148/046 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/16 ,  Y10S438/962

摘要： Disclosed is an apparatus for forming a device having a fine structure, the apparatus including a high intensity ion source. The apparatus can be used to form fine grooves and/or a fine film, by supplying a reactive gas to the surface to be etched or coated while irradiating a focused ion beam on the surface. A laser or electron beam can be irradiated on substantially the same axis as that of the focused ion beam, whereby defects arising due to ion beam processing can be repaired. The apparatus can further include ion beam current detection and measurement structure to determine when a predetermined thickness of coating or depth of etching is achieved. The apparatus can include multiple chambers sequentially holding the surface treated, and can include a scanning electron microscope for scanning the surface being coated or etched.

公开(公告)号：US07057744B2

公开(公告)日：2006-06-06

申请号：US10082520

申请日：2002-02-22

申请人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

发明人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

IPC分类号： G01B11/28

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/8422

摘要： A method for high-precision measurement of film thickness and the distribution of film thickness of a transparent film is disclosed. The method is performed during a CMP process, without being affected by the film thickness distribution among the LSI regions or on the semiconductor wafer surface. The film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity. This permits highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution.