公开(公告)号：US4577165A

公开(公告)日：1986-03-18

申请号：US580853

申请日：1984-02-16

申请人： Akira Uehara ,  Takashi Uehara ,  Miyuki Saito ,  Toshiyuki Ishida

发明人： Akira Uehara ,  Takashi Uehara ,  Miyuki Saito ,  Toshiyuki Ishida

IPC分类号： H03B5/36 ,  H03L5/02

CPC分类号： H03B5/36 ,  H03L5/02 ,  H03B2200/0094 ,  H03B2200/0098

摘要： A high-frequency oscillator including an oscillation circuit (1) having a quartz crystal (X) and an amplifying element (Q.sub.2), a power amplifying circuit (3) for amplifying the output of the oscillation circuit, and a control system (Q.sub.7, 6) for varying a bias voltage of the amplifying element to thereby control the output power of the power amplification circuit. The control system comprises an FET (Q.sub.7) connected at the drain thereof to the amplifying element, and a control circuit (6) for applying a control signal to the gate of the FET.

摘要翻译： 包括具有石英晶体（X）和放大元件（Q2）的振荡电路（1）的高频振荡器，用于放大振荡电路的输出的功率放大电路（3）和控制系统（Q7， 6），用于改变放大元件的偏置电压，从而控制功率放大电路的输出功率。 控制系统包括在其漏极处连接到放大元件的FET（Q7）和用于向FET的栅极施加控制信号的控制电路（6）。

公开(公告)号：US5584647A

公开(公告)日：1996-12-17

申请号：US006162

申请日：1993-01-19

申请人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

发明人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

IPC分类号： B25J9/06 ,  B25J9/04 ,  B25J21/00 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68707 ,  B25J21/005 ,  B25J9/042 ,  H01L21/67742 ,  Y10S414/135 ,  Y10T74/20207

摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.

摘要翻译： 物体处理装置连续地传送诸如半导体晶片的物体。 物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于 转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元 第三驱动轴围绕它们自己的轴彼此独立。

公开(公告)号：US5364488A

公开(公告)日：1994-11-15

申请号：US954210

申请日：1992-09-30

申请人： Mitsuaki Minato ,  Akira Uehara ,  Atsushi Matsushita

发明人： Mitsuaki Minato ,  Akira Uehara ,  Atsushi Matsushita

IPC分类号： G03F7/42 ,  H01J37/32 ,  H01L21/027 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46 ,  H01L21/00

CPC分类号： H01J37/32522 ,  H01J2237/334 ,  Y10S156/912

摘要： A plasma processing apparatus for ashing semi-conductors wafers has a vertically elongate cylindrical chamber for generating a plasma for processing a workpiece housed therein with heat applied thereto. The cylindrical chamber has upper and lower open ends closed respectively by upper and lower chamber plates. A cooling coil is positioned above the upper chamber plate. A temperature controller actuates a fan unit to force an air flow over the cooling coil to the upper chamber plate for keeping the temperature in the cylindrical chamber within a predetermined range. The plasma processing apparatus includes inner and outer electrodes disposed inside and outside, respectively, of the cylindrical chamber, and a Radio Frequency generator for generating the plasma between the inner and outer electrodes.

摘要翻译： 用于灰化半导体晶片的等离子体处理装置具有垂直细长的圆柱形室，用于产生用于加热其中容纳在其中的工件的等离子体。 圆柱形腔室具有上和下开口端，分别由上室和下室板封闭。 冷却盘管位于上腔室板的上方。 温度控制器致动风扇单元以迫使空气流过冷却盘管到上室板，用于将圆柱形室中的温度保持在预定范围内。 等离子体处理装置包括分别设置在圆柱形室的内部和外部的内部和外部电极，以及用于在内部和外部电极之间产生等离子体的射频发生器。

公开(公告)号：US5137144A

公开(公告)日：1992-08-11

申请号：US585986

申请日：1990-09-21

申请人： Akira Uehara

发明人： Akira Uehara

IPC分类号： B65G17/10 ,  B65G21/22

CPC分类号： B65G17/10 ,  B65G2201/04

摘要： A conveyor system having conveyor pieces connected together, without gaps, and links having projections engageable with sprockets connected in an endless manner to thereby constitute an endless conveyor. The arrangement permits powdery goods or fluid goods to be conveyed without falling or spilling from the link portions of the loading surface of the endless conveyor. A plurality of side protect fins are placed one on another without gaps on the sides of the endless conveyor in its width direction. This allows powdery goods or fluid goods to be conveyed without falling or spilling from the overlapping portions of the side protect fins at the sides of the loading surface.

公开(公告)号：US4946537A

公开(公告)日：1990-08-07

申请号：US371743

申请日：1989-06-26

申请人： Isamu Hijikata ,  Akira Uehara

发明人： Isamu Hijikata ,  Akira Uehara

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32192 ,  H01J37/3266 ,  H05H1/46

摘要： A plasma reactor includes a chamber, a specimen such as a wafer or the like supported in the chamber, a device for generating a plasma in the chamber, and at least one electromagnetic coil disposed coaxially around the chamber. The specimen is supported parallel to a magnetic field generated by the electromagnetic coil. High-density and high-energy charged particles in the plasma collide perpendicularly with the surface of the specimen to treat the specimen by way of etching or the like.

摘要翻译： 等离子体反应器包括室，诸如支撑在室中的晶片等的样品，用于在室中产生等离子体的装置，以及围绕室同轴设置的至少一个电磁线圈。 样本被平行于由电磁线圈产生的磁场支撑。 等离子体中的高密度和高能带电粒子与样品的表面垂直地碰撞，以通过蚀刻等方式对样品进行处理。

公开(公告)号：US4550239A

公开(公告)日：1985-10-29

申请号：US424503

申请日：1982-09-27

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

IPC分类号： B65G49/07 ,  H01L21/677 ,  B23K9/00

CPC分类号： H01L21/67778 ,  H01L21/67781 ,  Y10S156/912 ,  Y10S414/137 ,  Y10S414/14

摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.

摘要翻译： 一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。 自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架 进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。 该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。

公开(公告)号：US06761930B2

公开(公告)日：2004-07-13

申请号：US10199602

申请日：2002-07-19

申请人： Hiroyoshi Sago ,  Shigemi Fujiyama ,  Futoshi Shimai ,  Akira Uehara

发明人： Hiroyoshi Sago ,  Shigemi Fujiyama ,  Futoshi Shimai ,  Akira Uehara

IPC分类号： B05D142

CPC分类号： H01L21/6715

摘要： A slit nozzle is positioned above a surface of a substrate placed in a rotary coater, and, while the slit nozzle is translated parallel to the surface of the substrate a coating solution is ejected from the slit nozzle toward the glass substrate under conditions such that the effects of surface tension of the solution are minimized or substantially cancelled out, to uniformly coat the coating solution on substantially the entire surface of the substrate with minimum wasting of the solution.

摘要翻译： 狭缝喷嘴位于旋转涂布机的基板的表面上方，并且在狭缝喷嘴平行于基板的表面平行地平移时，将涂布液从狭缝喷嘴朝向玻璃基板喷射， 使溶液的表面张力的作用最小化或基本抵消，以最小程度地消除溶液的浪费，均匀地将涂布液涂覆在基材的基本整个表面上。

公开(公告)号：US5344536A

公开(公告)日：1994-09-06

申请号：US984518

申请日：1992-12-02

申请人： Kazuto Obuchi ,  Satoshi Oya ,  Mitsuaki Minato ,  Akira Uehara ,  Kazutoshi Fujisawa ,  Kazuhisa Takao

发明人： Kazuto Obuchi ,  Satoshi Oya ,  Mitsuaki Minato ,  Akira Uehara ,  Kazutoshi Fujisawa ,  Kazuhisa Takao

IPC分类号： G01R33/64 ,  C23C16/511 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/02

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32678 ,  H01J37/32706

摘要： An electron cyclotron resonance plasma chemical vapor deposition system has a reaction chamber for introducing a reaction gas therein, the reaction chamber housing a table for supporting a semiconductor wafer. A microwave oscillator is connected to the reaction chamber through a waveguide for generating and introducing a microwave into the reaction chamber to produce a plasma in the reaction chamber for activating the reaction gas to etch or deposit a film on the semiconductor wafer in the reaction chamber. A pair of upper and lower coils is disposed around the reaction chamber for generating respective magnetic fields in opposite directions in the reaction chamber. The magnetic fields cancel out each other creating a region with substantially no flux density in the magnetic fields between the coils. A bias voltage is applied to the table to attract the plasma to the table in a uniform manner.

摘要翻译： 电子回旋共振等离子体化学气相沉积系统具有用于在其中引入反应气体的反应室，反应室容纳用于支撑半导体晶片的工作台。 微波振荡器通过波导连接到反应室，用于产生微波并将其引入反应室，以在反应室中产生等离子体，以激活反应气体以在反应室中的半导体晶片上蚀刻或沉积膜。 一对上下线圈设置在反应室周围，用于在反应室中产生相反方向的相应磁场。 磁场彼此抵消，在线圈之间的磁场中产生基本上没有磁通密度的区域。 将偏置电压施加到工作台上以均匀的方式将等离子体吸引到工作台上。

公开(公告)号：USD333544S

公开(公告)日：1993-02-23

申请号：US696539

申请日：1991-05-07

申请人： Akira Uehara

设计人： Akira Uehara

公开(公告)号：USD291413S

公开(公告)日：1987-08-18

申请号：US689661

申请日：1985-01-08

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

设计人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama