摘要:
A solid state imaging element including light receiving elements and microlenses is placed in a recess of a ceramic package. A black resin fills space between the ceramic package and the solid state imaging element.
摘要:
An improved solid-state image sensor is provided by having an image sensing element composed of photoelectric conversion parts, a microlens formed on the surface of the image sensing element corresponding to each photoelectric conversion part, and optical fiber bundle formed of optical fibers arranged in a two-dimensional shape and mounted on the microlens. The optical fiber bundle is also composed of a core and a clad portion. The refractive index of a filler which mounts the optical fiber bundle on the microlens is less than that of the microlens and greater than that of the clad portion of each of the optical fibers.
摘要:
A solid-state image sensor includes a color filter covering a solid-state imaging device and having at least three kinds of filter elements arranged in rows and columns. Each of the filter elements transmits red, green, and blue light over its entire surface area with a transmittance of at least 20 to 80 percent for each color light.
摘要:
White, yellow, and cyan color filters are superposed in rows and columns on picture elements of a solid-state color imaging apparatus. In each recurring cycle of four-row and two-column filters, the green component of light is transmitted through all filters.
摘要:
A solid-state color imaging apparatus having a plurality of picture elements for converting incident light to signal charges with the picture elements being arrayed regularly in both a horizontal direction and a vertical direction to form horizontal rows and vertical columns. First color filters are on the picture elements in odd numbered rows for providing modulation characteristics of color components and causing the picture elements in the odd numbered rows to generate a first color difference signal. Second color filters are on the picture elements in even numbered rows for providing modulation characteristics of color components and causing the picture elements in the even numbered rows to generate a second color difference signal. The first and second color difference signals are substantially zero when achromatic light is incident upon the picture elements or is picked up at a reference color temperature.
摘要:
A driving method used for a solid-state imaging device according to the present invention includes: imaging an object for a first storage time when a shutter is open, in a first state that is a state where either at least a part of the peripheral circuitry is suspended or a consumption current of the peripheral circuitry is limited; imaging, in the first state, a dark output signal image including only a dark output for a second storage time when the shutter is closed; converting the dark output signal image to correspond to the image obtained for the first storage time and subtracting, from the signal image of the object, the converted dark output signal image or converting the dark output signal image to correspond to the image obtained for the second storage time and subtracting, from the signal image of the object, the converted dark output signal image.
摘要:
Provided is a solid-state imaging device including a plurality of vertical transfer units (VCCDs), a horizontal transfer unit (HCCD) and a driving unit. In a vertical final stage of the VCCDs, there are same transfer electrode structures in every m columns, where m is equal to or more than 2, the vertical final stage being a vertical transfer stage located the closest to the HCCD, in each vertical final stage of columns except one column among the m columns or of all columns among the m columns, there are transfer electrodes independent from electrodes in the other columns in the m columns, and the independent transfer electrodes are driven independently to perform transfer processing from the corresponding vertical final stage to the HCCD, the driving being independent from driving for the electrodes in the other columns in the m columns, and the driving unit performs sequential vertical transfer driving, by which first packets and second packets are sequentially and vertically transferred within one horizontal transfer period, the first packet including a signal component to be used as an image signal and the second packet not including any signal component to be used as an image signal, and to apply, in the sequential vertical transfer driving, respective transfer pulses to the transfer electrodes in the vertical transfer stage and transfer electrodes of the HCCD, so that the first packets and the second packets are separated to be allocated into respective different horizontal transfer stages of the HCCD.
摘要:
A solid state image sensor capable of preventing image degradation, such as shading and ringing, from occurring in an image portion along the left edge of a screen. The solid state image sensor includes, in addition to a horizontal drive circuit that generates a horizontal drive pulse for driving a horizontal register, a pseudo-horizontal drive circuit that generates a pseudo-horizontal drive pulse successive to the horizontal drive pulse during a horizontal blanking interval. The horizontal drive circuit and pseudo-horizontal drive circuit are connected to a horizontal driver power supply unit, which generates, during the horizontal blanking interval, a current that is equal to a current generated by the horizontal driver power supply unit during an effective interval. This arrangement can prevent any power supply ripples from occurring immediately after the beginning of the effective interval.
摘要:
A solid-state imaging device of the present invention includes: photodiodes having a vertical overflow drain structure; vertical shift registers for temporarily storing signals transferred from the photodiodes; and a horizontal shift register for storing and horizontally transferring signals transferred from the vertical shift registers, wherein a φSUB pulse is applied to the substrate, the φSUB pulse having a larger pulse width than a φV pulse applied to the gate electrode of each vertical shift register. Thus, it is possible to sweep out smear charges from the photodiode toward the substrate.
摘要:
An image sensor is fabricated on an n type silicon substrate haivng a p type well overlain by a photo shield plate, and photo diodes are formed in the p type well and exposed through an opening in the photo shield plate to an optical image, in which the silicon substrate and the photo shield plate are biased so that punch through phenomena take place between the silicon substrate and the photo diodes for sweeping ineffectual electric charges into the substrate, thereby achieving an electronic shutter mode of operating without any complicate impurity profiles.