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    Alignment technique
    2.
    发明授权
    Alignment technique 失效
    对齐技术

    公开(公告)号：US4546260A

    公开(公告)日：1985-10-08

    申请号：US509515

    申请日：1983-06-30

    申请人： Robert A. Simpson ,  Ralph R. Trotter ,  Edward V. Weber

    发明人： Robert A. Simpson ,  Ralph R. Trotter ,  Edward V. Weber

    IPC分类号： H01L21/027 ,  H01J37/304 ,  H01L21/68 ,  H01L23/544 ,  H01J37/00

    CPC分类号： H01J37/3045 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002

    摘要： An alignment system for registration of a scanning beam in a mask inspection tool. Minimum scan widths (W) in the registration process are attained thereby increasing registration sensitivity. This technique allows initial placement of the E-Beam to be outside the capture range so that the scan on one side is completely off the metal (on glass) and the scan on the other side is completely on the metal. Correction signals are obtained by comparing the backscattered electron signals from the two scans with the magnitude of the signal being indicative of the amount of correction required and the sign being indicative of the direction of correction.

    摘要翻译： 一种用于在掩模检查工具中对准扫描光束的对准系统。 达到配准过程中的最小扫描宽度（W），从而提高了配准灵敏度。 该技术允许电子束的初始放置在捕获范围之外，使得一侧的扫描完全离开金属（在玻璃上），另一侧的扫描完全在金属上。 校正信号是通过比较来自两次扫描的反向散射电子信号与信号的大小指示所需的校正量以及符号表示校正方向来获得的。

    Pattern inspection tool - method and apparatus
    3.
    发明授权
    Pattern inspection tool - method and apparatus 失效
    图案检查工具 - 方法和装置

    公开(公告)号：US4365163A

    公开(公告)日：1982-12-21

    申请号：US218323

    申请日：1980-12-19

    申请人： Donald E. Davis ,  Richard D. Moore ,  Philip M. Ryan ,  Edward V. Weber

    发明人： Donald E. Davis ,  Richard D. Moore ,  Philip M. Ryan ,  Edward V. Weber

    IPC分类号： G03F1/86 ,  H01J37/304 ,  H01J37/00

    CPC分类号： G03F1/86 ,  H01J37/3045

    摘要： This describes an automatic defect inspection system as could be applied to metallized masks or other patterns. The system causes each subfield to be individually aligned for inspection irrespective of the previous alignment of the pattern or any other sub-field. This is accomplished by scanning a preselected portion of each sub-field and adjusting the position of the scan based on the resulting signal while scanning a pre-established portion of the sub-field. In this way a portion of each sub-field is used as an alignment mark and stepping errors avoided.Once alignment is achieved a probe, comparable to the size of the minimum defect to be detected is scanned over the sub-field with an overlapping pattern to find defects such as excessive metal, metal in improper places or points where the metal is missing.

    摘要翻译： 这描述了可应用于金属化掩模或其它图案的自动缺陷检查系统。 无论模式或任何其他子场的先前对齐如何，系统都会使每个子区域单独对齐。 这是通过扫描每个子场的预选部分并且在扫描子场的预先建立的部分的同时基于所得到的信号来调整扫描的位置来实现的。 以这种方式，每个子场的一部分被用作对准标记并避免了步进错误。 一旦实现了对准，就可以通过重叠图案在子场上扫描与待检测的最小缺陷尺寸相当的探针，以发现缺陷，例如过多的金属，金属在不适当的位置或金属缺失点。

    Automatic overlay measurements using an electronic beam system as a measurement tool
    5.
    发明授权
    Automatic overlay measurements using an electronic beam system as a measurement tool 失效
    使用电子束系统作为测量工具的自动覆盖测量

    公开(公告)号：US4149085A

    公开(公告)日：1979-04-10

    申请号：US869972

    申请日：1978-01-16

    申请人： Donald E. Davis ,  Edward V. Weber ,  Maurice C. Williams ,  Ollie C. Woodard

    发明人： Donald E. Davis ,  Edward V. Weber ,  Maurice C. Williams ,  Ollie C. Woodard

    IPC分类号： G01B15/00 ,  H01J37/304 ,  H01L21/027 ,  H01L21/302 ,  H01J37/00

    CPC分类号： H01J37/3045

    摘要： A method and apparatus is described for performing automatic overlay measurements on wafers utilized in semiconductor manufacturing. The overlay measurements are made at selected sites on a given wafer where a single bar pattern has been overlaid over a double bar pattern. The position of the single bar center line with respect to the center line between the double bars is a direct indication of the overlay error of the two patterns. The overlay error is measured in both the X and Y dimensions and is utilized to monitor the overlay error or to produce statistics and correlations to system parameters so that the sources of overlay errors may be identified and the errors eliminated or minimized on subsequent wafers being processed.

    摘要翻译： 描述了一种在半导体制造中使用的晶片上进行自动重叠测量的方法和装置。 覆盖测量在给定晶片上的选定位置处进行，其中单个条形图案已经覆盖在双重条形图案上。 单条中心线相对于双杆之间的中心线的位置是两种图案的重叠误差的直接指示。 覆盖误差在X和Y维度上都被测量，并用于监测覆盖误差或产生与系统参数的统计学和相关性，从而可以识别覆盖误差的来源，并且在随后的晶片处理中消除或最小化误差 。

    Method and apparatus for forming a variable size electron beam
    7.
    发明授权
    Method and apparatus for forming a variable size electron beam 失效
    用于形成可变尺寸电子束的方法和装置

    公开(公告)号：US4243866A

    公开(公告)日：1981-01-06

    申请号：US2499

    申请日：1979-01-11

    申请人： Hans C. Pfeiffer ,  Philip M. Ryan ,  Edward V. Weber

    发明人： Hans C. Pfeiffer ,  Philip M. Ryan ,  Edward V. Weber

    IPC分类号： H01J37/147 ,  H01J37/30 ,  B23K15/00 ,  G21K1/08

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/147 ,  H01J37/3007

    摘要： In electron beam apparatus having a souce of electrons and a target area toward which the electrons are directed, electron beam forming means are provided along the path from the source to the target. These forming means include a first beam shaping member having a first spot shaping aperture therein, a second beam shaping member having a second spot shaping aperture therein, and means focusing the image of the first aperture in the plane of the second aperture to thereby form a composite spot shape defined by the image of the first aperture and the second aperture. Further means are provided for focusing the image of the composite spot in the target area.Preferably, the apertures are square shaped. Thus, by varying the position of the superimposed image of the first aperture with respect to the second aperture, a wide variety of rectangular shaped composite spots with different dimensions is obtainable. This permits the exposure of rectilinear patterns, e.g., in photoresists of integrated circuit fabrication, by the electron beam with a minimum of exposure steps and substantially no exposure overlap. The result is greatly increased speed in the total exposure of such rectilinear areas to the electron beam as well as a minimum of the "blooming effects" produced by exposure overlap.

    摘要翻译： 在具有电子和电子指向的目标区域的电子束装置中，沿着从源极到靶的路径设置电子束形成装置。 这些形成装置包括其中具有第一光斑成形孔的第一光束整形元件，其中具有第二光点整形孔的第二光束整形元件，以及将第一光圈的图像聚焦在第二光阑的平面中，从而形成 由第一孔径和第二孔径的图像限定的复合斑点形状。 提供了用于将复合点的图像聚焦在目标区域中的另外的装置。 优选地，孔是正方形的。 因此，通过改变相对于第二孔的第一孔的叠加图像的位置，可获得具有不同尺寸的多种矩形复合斑点。 这允许通过电子束以最小的曝光步骤和基本上没有曝光重叠的方式曝光直线图案，例如在集成电路制造的光致抗蚀剂中。 结果是这种直线区域对电子束的总曝光速度大大提高，并且由曝光重叠产生的最小的“起霜效果”。