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1.发明申请公开(公告)号：US20150124848A1
公开(公告)日：2015-05-07
申请号：US14060682
申请日：2013-10-23
IPC分类号： H01S5/026
CPC分类号： H01S5/141 , H01S5/0064 , H01S5/02248 , H01S5/02284
摘要： A module is configured with a housing enclosing a diode laser. Fast and slow axes collimators are located behind the rear facet of the laser, which along with a front facet, defines an intra-cavity cavity of the laser. The facets are partially transmissive to light and therefore emit laser light. A wavelength selective optical element is aligned with the collimators and configured to reflect light emitted through the back facet and processed by collimators back into the intra-cavity. As a result, the laser beam is emitted through the front facet at a wavelength locked on the desired wavelength of the optical element. A delivery fiber is mechanically coupled to the front facet of diode laser and configured to receive and guide the emitted laser beam along the path of light.
摘要翻译： 模块配置有封装二极管激光器的外壳。 快轴和慢轴准直器位于激光器的后面后面，其与前刻面一起限定激光器的腔内空腔。 小面对光部分透射，因此发射激光。 波长选择光学元件与准直器对准，并且被配置为反射通过后刻面发射并由准直器处理的光返回到腔内。 结果，激光束以锁定在光学元件的期望波长上的波长通过前端面发射。 输送光纤机械地耦合到二极管激光器的前刻面并且被配置为沿着光路接收和引导发射的激光束。
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2.发明授权Laser ablation process for manufacturing submounts for laser diode and laser diode units 有权用于制造激光二极管和激光二极管单元的基座的激光烧蚀工艺公开(公告)号：US09440312B2
公开(公告)日：2016-09-13
申请号：US13904174
申请日：2013-05-29
CPC分类号： H01S5/02236 , B23K26/0622 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L24/83 , H01L2224/291 , H01L2224/83192 , H01L2224/83801 , H01L2924/12042 , H01S5/02272 , H01S5/02276 , H05K3/0026 , H05K3/0052 , Y10T29/53174 , H01L2924/00014 , H01L2924/00 , H01L2924/014
摘要： A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation.
摘要翻译： 一种用于制造激光二极管的基座的方法包括以下步骤：提供配置有陶瓷载体的基底和沉积在基底上的金属层。 该方法还包括使用脉冲激光器，其操作以产生在金属层表面上以预定图案选择性地训练的多个脉冲，以便将金属层的期望区域烧蚀到期望的深度。 此后，基座被分成多个支撑激光二极管的基座。 金属层包括沉积在陶瓷上的银子层，其厚度足以有效地促进散热。
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3.发明申请Laser Ablation Process for Manufacturing Submounts for Laser Diode and Laser Diode Units 有权用于激光二极管和激光二极管单元的制造基座的激光烧蚀过程公开(公告)号：US20140353362A1
公开(公告)日：2014-12-04
申请号：US13904174
申请日：2013-05-29
CPC分类号： H01S5/02236 , B23K26/0622 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L24/83 , H01L2224/291 , H01L2224/83192 , H01L2224/83801 , H01L2924/12042 , H01S5/02272 , H01S5/02276 , H05K3/0026 , H05K3/0052 , Y10T29/53174 , H01L2924/00014 , H01L2924/00 , H01L2924/014
摘要： A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation.
摘要翻译： 一种用于制造激光二极管的基座的方法包括以下步骤：提供配置有陶瓷载体的基底和沉积在基底上的金属层。 该方法还包括使用脉冲激光器，其操作以产生在金属层表面上以预定图案选择性地训练的多个脉冲，以便将金属层的期望区域烧蚀到期望的深度。 此后，基座被分成多个支撑激光二极管的基座。 金属层包括沉积在陶瓷上的银子层，其厚度足以有效地促进散热。
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公开(公告)号：US08615029B2
公开(公告)日：2013-12-24
申请号：US12649443
申请日：2009-12-30
IPC分类号： H01S3/06
CPC分类号： H01S5/2036 , H01S5/028 , H01S5/0425 , H01S5/1014 , H01S5/1064 , H01S2301/18
摘要： A laser diode is configured with a substrate delimited by opposite AR and HR reflectors and a gain region. The gain region bridges the portions of the respective AR and HR reflectors and is configured with a main resonant cavity and at least one side resonant cavity. The main resonant cavity spans between the portions of the respective reflectors, and at least one additional resonant cavity extends adjacent to the main resonator cavity. The gain region is configured so that stimulated emission is generated only in the main resonant cavity. Accordingly, the laser diode is operative to radiate a high-power output beam emitted through the portion of the AR reflector which is dimensioned to shape the output beam with the desired near-field.
摘要翻译： 激光二极管配置有由相对的AR和HR反射器限定的衬底和增益区域。 增益区域桥接相应AR和HR反射器的部分，并且配置有主谐振腔和至少一个侧共振腔。 主谐振腔跨越各个反射器的部分之间，并且至少一个额外的谐振腔相邻于主谐振腔延伸。 增益区被配置成仅在主谐振腔中产生受激发射。 因此，激光二极管可操作地辐射通过AR反射器的部分发射的大功率输出光束，其尺寸被设计成具有期望的近场的输出光束的形状。
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公开(公告)号：US20110158274A1
公开(公告)日：2011-06-30
申请号：US12649443
申请日：2009-12-30
IPC分类号： H01S5/30
CPC分类号： H01S5/2036 , H01S5/028 , H01S5/0425 , H01S5/1014 , H01S5/1064 , H01S2301/18
摘要： A laser diode is configured with a substrate delimited by opposite AR and HR reflectors and a gain region. The gain region bridges the portions of the respective AR and HR reflectors and is configured with a main resonant cavity and at least one side resonant cavity. The main resonant cavity spans between the portions of the respective reflectors, and at least one additional resonant cavity extends adjacent to the main resonator cavity. The gain region is configured so that stimulated emission is generated only the main resonant cavity. Accordingly, the laser diode is operative to radiate a high-power output beam emitted through the portion of the AR reflector which is dimensioned to shape the output beam with the desired near-field.
摘要翻译： 激光二极管配置有由相对的AR和HR反射器限定的衬底和增益区域。 增益区域桥接相应AR和HR反射器的部分，并且配置有主谐振腔和至少一个侧共振腔。 主谐振腔跨越各个反射器的部分之间，并且至少一个额外的谐振腔相邻于主谐振腔延伸。 增益区域被配置为仅仅产生受激发射的主谐振腔。 因此，激光二极管可操作地辐射通过AR反射器的部分发射的大功率输出光束，其尺寸被设计成具有期望的近场的输出光束的形状。
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