公开(公告)号：US20190267424A1

公开(公告)日：2019-08-29

申请号：US16346273

申请日：2017-10-19

Applicant: ams AG

Inventor： Sonja KOENIG ,  Bernhard STERING ,  Harald ETSCHMAIER

IPC: H01L27/146

Abstract: A method for manufacturing optical sensor arrangements is provided. The method comprises providing at least two optical sensors on a carrier and providing a cover material on the side of the optical sensors facing away from the carrier. The method further comprises providing an aperture for each optical sensor on a top side of the cover material facing away from the carrier and forming at least one trench between the optical sensors from the carrier towards the top side of the cover material, the trench comprising inner walls. Moreover, the method comprises coating the inner walls with an opaque material, such that an inner volume of the trench is free of the opaque material, and singulating of the optical sensor arrangements along the at least one trench. Furthermore, a housing for an optical sensor is provided.

公开(公告)号：US20170179056A1

公开(公告)日：2017-06-22

申请号：US15118469

申请日：2015-02-09

Applicant: Ams AG

Inventor： Martin SCHREMS ,  Bernhard STERING ,  Harald ETSCHMAIER

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/485

CPC classification number: H01L24/11 ,  H01L23/31 ,  H01L23/3157 ,  H01L23/481 ,  H01L23/485 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02125 ,  H01L2224/03001 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05563 ,  H01L2224/0557 ,  H01L2224/05573 ,  H01L2224/05576 ,  H01L2224/05599 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15′) of the cavity is provided to expose the cavity to the environment.

公开(公告)号：US20170125613A1

公开(公告)日：2017-05-04

申请号：US15317641

申请日：2015-05-22

Applicant: ams AG

Inventor： Rainer MINIXHOFER ,  Bernhard STERING ,  Harald ETSCHMAIER

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/153 ,  H01L31/0203

CPC classification number: H01L31/02164 ,  H01L27/14678 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/153 ,  H01L31/167 ,  H01L31/1876 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/48145 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

公开(公告)号：US20170200647A1

公开(公告)日：2017-07-13

申请号：US15313489

申请日：2015-05-21

Applicant: ams AG

Inventor： Bernhard STERING

IPC: H01L21/78 ,  H01L23/00 ,  H01L21/683 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L21/78 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/3114 ,  H01L24/05 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/13024

Abstract: A semiconductor substrate (1) is provided with integrated circuits. Dicing trenches (7) are formed in the substrate (1) between the integrated circuits, a polyimide layer (8) spanning the trenches (7) is applied above the integrated circuits, a tape layer (14) is applied above the polyimide layer (8), and a layer portion of the substrate (1) is removed from the substrate side (17) opposite the tape layer (14), until the trenches (7) are opened and dicing of the substrate (1) is thus effected. The polyimide layer (8) is severed in sections (18) above the trenches (7) when the tape layer (14) is removed. The semiconductor chip is provided with a cover layer (11) laterally confining the polyimide layer (8) near the trenches (7), in particular for forming breaking delimitations (9).

公开(公告)号：US20170062277A1

公开(公告)日：2017-03-02

申请号：US15118836

申请日：2015-02-09

Applicant: ams AG

Inventor： Martin SCHREMS ,  Bernhard STERING ,  Franz SCHRANK

IPC: H01L21/78 ,  H01L21/768 ,  H01L23/00 ,  H01L21/683

CPC classification number: H01L21/78 ,  H01L21/6835 ,  H01L21/76898 ,  H01L24/11 ,  H01L2224/02372 ,  H01L2224/05569

Abstract: The dicing method comprises the steps of providing a substrate (1) of semiconductor material, the substrate having a main surface (10), where integrated components (3) of chips (13) are arranged, and a rear surface (11) opposite the main surface, fastening a first handling wafer above the main surface, thinning the substrate at the rear surface, and forming trenches (20) penetrating the substrate and separating the chips by a single etching step after the substrate has been thinned.

Abstract translation: 切割方法包括以下步骤：提供半导体材料的基板（1），所述基板具有主表面（10），其中布置有芯片（13）的集成部件（3）和与所述芯片（13）相对的后表面 主表面，紧固在主表面上方的第一处理晶片，使后表面上的基板变薄，并且在基板变薄之后，形成穿透基板的沟槽（20）并通过单个蚀刻步骤分离芯片。