Abstract:
An apparatus comprises an optical sensor package that includes an optical sensor die. The optical sensor package further includes a reflow-stable optical diffuser disposed over the optical sensor die. The optical diffuser is surrounded laterally by an epoxy molding compound.
Abstract:
A method for manufacturing optical sensor arrangements is provided. The method comprises providing at least two optical sensors on a carrier and providing a cover material on the side of the optical sensors facing away from the carrier. The method further comprises providing an aperture for each optical sensor on a top side of the cover material facing away from the carrier and forming at least one trench between the optical sensors from the carrier towards the top side of the cover material, the trench comprising inner walls. Moreover, the method comprises coating the inner walls with an opaque material, such that an inner volume of the trench is free of the opaque material, and singulating of the optical sensor arrangements along the at least one trench. Furthermore, a housing for an optical sensor is provided.
Abstract:
A method of manufacturing an optical sensor arrangement including the steps of providing a substrate having a surface and providing an integrated circuit comprising an optical detector arranged for detecting light of a desired wavelength range. The integrated circuit and a light emitter are mounted onto the surface, wherein the light emitter is arranged for emitting light in the desired wavelength range. The integrated circuit and the light emitter are electrically connected to each other and to the substrate. A light barrier is formed between the optical detector and the light emitter by dispensing a first optically opaque material along a profile of the integrated circuit. A mold layer is formed by at least partly encapsulating the substrate, the integrated circuit and the light emitter with an optically transparent material. A casing, made from a second optically opaque material, is mounted on the light barrier and thereby encloses a hollow space between the casing and the mold layer.
Abstract:
The chip scale current sensor package comprises an IC chip (1) including a sensor (5) for measuring a magnetic field, and an electrically conductive layer (2) applied to a main surface (10) of the IC chip. The sensor is arranged for a measurement of a magnetic field generated by an electric current (6) flowing in the electrically conductive layer, and the electrically conductive layer is insulated from contact pads (4) electrically connecting the IC.
Abstract:
A method for fabricating a plurality of Time-of-Flight sensor devices (1) comprises a step of providing a wafer (100) including a plurality of wafer portions (110) for a respective one of the Time-of-Flight sensor devices (1), wherein each of the wafer portions (110) includes a first light detecting area (10) and a second light detecting area (20) and a respective light emitter device (30). The respective light emitter device (30) and the respective first light detecting area (10) is encapsulated by a first volume (40) of a light transparent material (130), and the respective second light detecting area (20) is encapsulated by a second volume (50) of the light transparent material (130). Before singulation of the devices (1), an opaque material (60) is placed on the wafer portions (110) in a space (120) between the respective first and second volume (40, 50) of the light transparent material (130).
Abstract:
An optical package is proposed comprising a carrier, an optoelectronic component, an aspheric lens, and a reflective layer. The carrier comprises electrical interconnections and the optoelectric component is arranged for emitting and/or detecting electromagnetic radiation in a specified wavelength range. Furthermore, the optoelectric component is mounted on the carrier or integrated into the carrier and electrically connected to the electric interconnections. The aspheric lens has an upper surface, a lateral surface, and a bottom surface and the bottom surface is arranged on or near the optoelectric component. The aspheric lens comprises a material which is at least transparent in the specified wavelength range. The reflective layer comprises a reflective material, wherein the reflective layer at least partly covers the lateral surface of the aspheric lens, and wherein the reflective material is at least partly reflective in the specified wavelength range.
Abstract:
A package for an optical sensor, comprises an optically opaque enclosure for forming a cavity when mounted onto a substrate and an optical element based on an optically translucent polymer. An aperture in the enclosure is designed to attach the optical element to the enclosure.
Abstract:
A method of producing an optical sensor at wafer-level, comprising the steps of providing a wafer having a main top surface and a main back surface and arrange at or near the top surface of the wafer at least one first integrated circuit having at least one light sensitive component. Furthermore, providing in the wafer at least one through-substrate via for electrically contacting the top surface and back surface and forming a first mold structure by wafer-level molding a first mold material over the top surface of the wafer, such that the first mold structure at least partly encloses the first integrated circuit. Finally, forming a second mold structure by wafer-level molding a second mold material over the first mold structure, such that the second mold structure at least partly encloses the first mold structure.
Abstract:
The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15′) of the cavity is provided to expose the cavity to the environment.
Abstract:
The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).