摘要:
A method of self-assembling silicon quantum dots comprises the steps of providing a substrate, forming a thin amorphous Si film, and forming a plurality of Si quantum dots by controlling the energy and the shooting numbers of an excimer laser during an annealing process, wherein the excimer laser emits light on the thin amorphous Si film.
摘要:
A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.
摘要:
A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.
摘要:
A method of fabricating wave-shaped mask is disclosed. The method of fabricating wave-shaped mask comprises the steps of providing an elastomeric transparent substrate comprising an upper surface and a lower surface, applying a stable force to the elastomeric transparent substrate for deforming the elastomeric transparent substrate, forming a light-penetrable thin film layer on the upper surface of the elastomeric transparent substrate, and removing the force applying to the elastomeric transparent substrate, whereby the upper surface of the elastomeric transparent substrate and the light-penetrable thin film layer are in a periodic wave shape and the lower surface of the elastomeric transparent substrate is in a plate shape.
摘要:
A deep ocean current power plant comprises a current generator group, a floating midway platform, a generator anchorage system, a midway platform anchorage system, and at least one power transmission-and-distribution cable. The constructing procedure of the deep ocean current power plant comprises following steps of sea-cast anchoring and cable-numbering; platform assembling and undersea anchoring; current generator group anchoring; and testing and correcting a stability of whole structure.
摘要:
Infra-red images of tumors carry the information of normal and cancerous tissues in every pixel. We developed a Dual-Spectrum Heat Pattern Separation (DS-HPS) algorithm to quantify the energy from the area of the high temperature tissues, called qH map, and decompose the body surface into the high and normal temperature areas based on a pair of middle-wave Infra-red images and long-wave Infra-red images. Further, with longitudinal registration, we can detect the cancerous tissues and assess the chemotherapy treatment response on a pixel by pixel basis according to the change of the qH map derived by the DS-HPS algorithm. The preliminary result shows the area and the qH values in the high temperature area are decreased as the patients receive more chemotherapy. These suggest the proposed algorithm could capture the incremental or decremental of the energies emitted by the cancerous tissues, which has the potentials for chemotherapy assessment and early detection.
摘要:
The present invention provides a composite passivation film deposited at low temperatures ( 6.4 nm) of an amorphous silicon hydrogen (a-Si:H) film is formed over the a-SiN.sub.x :H film. Such a composite passivation film can prevent semiconductor devices from oxidation due to percolation of moisture, and maintain the electric properties and stability of the semiconductor devices.
摘要:
This algorithm provides a marker-free approach to establishing the pixel correspondence among the IR images taken at different times, which is the basis for quantitatively characterizing the variation of the heat energy and patterns pixel-wise on a breast surface. The idea is to use the corner points of the heat pattern and the branch points of the skeletons of the heat pattern on the body surface as the initial fiducial points for the longitudinal IR image registration. The Thin-Plate Spline technique is used to model the nonlinear deformation between two IR images taken at two different times. Mutual information between the TPS-transformed image and the target image is employed as the metric quantifying the quality of the longitudinal IR image registration. To optimize the registration, Nelder-Mead simplex method is used to locally modify the pairings of the fiducial points in the source and target IR images to maximize the mutual information.
摘要:
A light emitting device for generating infrared light includes a substrate, a first metal layer, a dielectric layer and a second metal layer. The substrate has a first surface. The first metal layer is formed on the first surface of the substrate. The dielectric layer is formed on the first metal layer. A thickness of the dielectric layer is greater than a particular value. The second metal layer is formed on the dielectric layer. When the light emitting device is heated, the dielectric layer has a waveguide mode such that the infrared light generated by the light emitting device can be transmitted in the dielectric layer. A wavelength of the infrared light generated in the waveguide mode relates to the thickness of the dielectric layer.
摘要:
The invention discloses a light emitting device including a substrate, a first metal layer, and an infrared light emitter. The substrate has a first surface, and the first metal layer is formed on the first surface of the substrate. The infrared light emitter is formed on the first metal layer and includes a dielectric metal interface consisting of a dielectric layer and a second metal layer. The first metal layer of the invention is capable of suppressing the background thermal radiation resulted from the substrate, such that the light emitting device can be operated at high temperature and then emits infrared with narrow bandwidth.