公开(公告)号：US09102512B2

公开(公告)日：2015-08-11

申请号：US14045855

申请日：2013-10-04

Applicant: Analog Devices, Inc.

Inventor： Christine H. Tsau ,  Li Chen ,  Kuang L. Yang

IPC: H01L29/84 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01P1/023 ,  G01P15/0802 ,  H01L29/84

Abstract: A MEMS apparatus has a substrate, a cap forming first and second chambers with the base, and movable microstructure within the first and second chambers. To control pressures, the MEMS apparatus also has a first outgas structure within the first chamber. The first outgas structure produces a first pressure within the first chamber, which is isolated from the second chamber, which, like the first chamber, has a second pressure. The first pressure is different from that in the second pressure (e.g., a higher pressure or lower pressure).

Abstract translation: MEMS装置具有基板，形成具有基座的第一和第二室的盖以及第一和第二室内的可移动微结构。 为了控制压力，MEMS装置还在第一室内具有第一排气结构。 第一排气结构在第一室内产生第一压力，该第一压力与第二室隔离，其与第一室相似，具有第二压力。 第一压力与第二压力（例如，较高压力或更低压力）不同。

公开(公告)号：US20150115376A1

公开(公告)日：2015-04-30

申请号：US14062157

申请日：2013-10-24

Applicant: Analog Devices, Inc.

Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang

IPC: B81B7/00 ,  B81C3/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81B7/0035 ,  B81B3/0094 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2207/012 ,  B81B2207/095 ,  B81C1/00293 ,  B81C3/001 ,  B81C2203/019

Abstract: A capped micromachined device has a movable micromachined structure in a first hermetic chamber and one or more interconnections in a second hermetic chamber that is hermetically isolated from the first hermetic chamber, and a barrier layer on its cap where the cap faces the first hermetic chamber, such that the first hermetic chamber is isolated from outgassing from the cap.

Abstract translation: 封盖的微加工装置在第一密封室中具有可移动的微机械加工结构，并且在与第一密封室气密隔离的第二密封室中的一个或多个互连以及其顶盖面向第一密封室的阻挡层， 使得第一密封室与盖的排气隔离。

公开(公告)号：US08749036B2

公开(公告)日：2014-06-10

申请号：US13673124

申请日：2012-11-09

Applicant: Analog Devices, Inc.

Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang

IPC: H01L23/06 ,  H01L23/02 ,  H01L23/34

CPC classification number: B81C3/001 ,  B81B7/007 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/035

Abstract: A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect.

Abstract translation: 微芯片具有基底裸片，其具有导电互连和围绕导电互连的至少一部分的隔离沟槽，以及固定到基模的帽模。 由金属材料形成的密封件位于基模和盖模之间，以将它们固定在一起。 微芯片还具有在隔离沟槽和金属密封件之间的阻挡装置，至少部分地防止金属材料与互连件接触。

公开(公告)号：US20230234835A1

公开(公告)日：2023-07-27

申请号：US18100846

申请日：2023-01-24

Applicant: Analog Devices, Inc.

Inventor： Xin Zhang ,  Jianglong Zhang ,  Li Chen ,  John C. Cowles ,  Michael Judy ,  Shafi Saiyed

IPC: B81B7/00 ,  H01L23/00 ,  H01L23/498 ,  B81C1/00

CPC classification number: B81B7/0048 ,  H01L23/562 ,  H01L23/49827 ,  B81C1/00666

Abstract: Packaging of microfabricated devices, such as integrated circuits, microelectromechanical systems (MEMS), or sensor devices is described. The packaging is 3D heterogeneous packaging in at least some embodiments. The 3D heterogeneous packaging includes an interposer. The interposer includes stress relief platforms. Thus, stresses originating in the packaging do not propagate to the packaged device. A stress isolation platform is an example of a stress relief feature. A stress isolation platform includes a portion of an interposer coupled to the remainder of the interposer via stress isolation suspensions. Stress isolation suspensions can be formed by etching trenches through the interposer.

公开(公告)号：US09242856B2

公开(公告)日：2016-01-26

申请号：US14224107

申请日：2014-03-25

Applicant: Analog Devices, Inc.

Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang

IPC: H01L23/06 ,  H01L23/34 ,  H01L23/12 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  B81C3/00 ,  B81C1/00

CPC classification number: B81C3/001 ,  B81B7/007 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/035

Abstract: A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect.

Abstract translation: 微芯片具有基底裸片，其具有导电互连和围绕导电互连的至少一部分的隔离沟槽，以及固定到基模的帽模。 由金属材料形成的密封件位于基模和盖模之间，以将它们固定在一起。 微芯片还具有在隔离沟槽和金属密封件之间的阻挡装置，至少部分地防止金属材料与互连件接触。

公开(公告)号：US20140203422A1

公开(公告)日：2014-07-24

申请号：US14224107

申请日：2014-03-25

Applicant: Analog Devices, Inc.

Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang

IPC: B81B7/00

CPC classification number: B81C3/001 ,  B81B7/007 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/035

Abstract: A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect.

Abstract translation: 微芯片具有基底裸片，其具有导电互连和围绕导电互连的至少一部分的隔离沟槽，以及固定到基模的帽模。 由金属材料形成的密封件位于基模和盖模之间，以将它们固定在一起。 微芯片还具有在隔离沟槽和金属密封件之间的阻挡装置，至少部分地防止金属材料与互连件接触。

公开(公告)号：US20180172631A1

公开(公告)日：2018-06-21

申请号：US15383415

申请日：2016-12-19

Applicant: Analog Devices, Inc.

Inventor： Chen Yang ,  Yumeng Liu ,  Li Chen ,  Kuang L. Yang

IPC: G01N27/447

Abstract: A microfluidic ion detector for detecting heavy metal ions in liquid and particulate matter from gas samples is described. The microfluidic ion detector includes a sample extraction structure for extracting sample ions from a sample liquid or extracting sample ions from the particulate matter of a gas sample, a separation structure for separating sample ions of different types once extracted, and a detection structure for detecting the sample ions. The microfluidic ion detector also includes a reference reservoir providing a reference ion against which the sample may be calibrated based on the operation of the separation structure. A portable, self-calibrating ion detector may be realized by including the described components on a single substrate.

公开(公告)号：US09150408B2

公开(公告)日：2015-10-06

申请号：US14338754

申请日：2014-07-23

Applicant: Analog Devices, Inc.

Inventor： Li Chen ,  Mitul Dalal

IPC: H01L23/02 ,  B81C1/00 ,  H01L21/48 ,  H01L21/50 ,  H01L23/04 ,  B81B7/00

CPC classification number: B81C1/00269 ,  B81B7/0058 ,  B81C1/00333 ,  B81C1/00523 ,  B81C2203/0118 ,  H01L21/4803 ,  H01L21/50 ,  H01L23/04 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of etching a plurality of cavities in a wafer provides a wafer having a patterned hard mask layer. The patterned hard mask has open areas defining locations for first cavities and second cavities. A mask is applied to cover the patterned hard mask layer. The mask is etched to remove wafer material from areas defined by the second cavities. The mask is removed and etching then removes wafer material except as prevented by the hard mask layer. This leaves the first cavities with a first depth and further deepens the second cavities to a depth greater than the first depth. By suitably configuring the second cavities, a capped die can be formed by securing the wafer to a second wafer and removing at least a portion of the unsecured side of the first wafer to expose the second cavities, thereby forming a plurality of caps on the second wafer.

Abstract translation: 蚀刻晶片中的多个空腔的方法提供具有图案化硬掩模层的晶片。 图案化的硬掩模具有限定第一腔和第二腔的位置的开放区域。 施加掩模以覆盖图案化的硬掩模层。 蚀刻掩模以从由第二腔限定的区域中去除晶片材料。 除去掩模，然后蚀刻除去硬掩模层所防止的晶片材料。 这使得第一空腔具有第一深度并且进一步将第二空腔加深至大于第一深度的深度。 通过适当地构造第二空腔，可以通过将晶片固定到第二晶片并且移除第一晶片的不安全侧的至少一部分以暴露第二空腔来形成封盖的裸片，由此在第二晶圆上形成多个盖 晶圆。

公开(公告)号：US20140374856A1

公开(公告)日：2014-12-25

申请号：US13926257

申请日：2013-06-25

Applicant: ANALOG DEVICES, INC.

Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang

IPC: B81B3/00 ,  H01L23/00 ,  H01L25/07 ,  H01L21/311

CPC classification number: B81B3/0051 ,  B81B3/0005 ,  B81B3/0059 ,  B81B2207/012 ,  B81C1/00976 ,  B81C2201/112 ,  B81C2203/0118

Abstract: One or more stopper features (e.g., bump structures) are formed in a standard ASIC wafer top passivation layer for preventing MEMS device stiction vertically in integrated devices having a MEMS device capped directly by an ASIC wafer. A TiN coating may be used on the stopper feature(s) for anti-stiction. An electrical potential may be applied to the TiN anti-stiction coating of one or more stopper features.

Abstract translation: 在标准ASIC晶片顶部钝化层中形成一个或多个塞子特征（例如，凸起结构），用于在具有由ASIC晶片直接覆盖的MEMS器件的集成器件中垂直地防止MEMS器件静电。 TiN涂层可用于阻塞特征以用于抗静电。 可以将电势施加到一个或多个塞子特征的TiN抗静电涂层。

公开(公告)号：US20140374850A1

公开(公告)日：2014-12-25

申请号：US13926384

申请日：2013-06-25

Applicant: Analog Devices, Inc.

Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang ,  Jeffrey Gregory

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0029 ,  B81C1/00238 ,  B81C1/00349 ,  H01L21/02126 ,  H01L25/0657 ,  H01L2224/81801 ,  H01L2924/10253 ,  H01L2924/1461

Abstract: One or more conductive shielding plates are formed in a standard ASIC wafer top metal layer, e.g., for blocking cross-talk from MEMS device structure(s) on the MEMS wafer to circuitry on the ASIC wafer when the MEMS device is capped directly by the ASIC wafer in a wafer-level chip scale package. Generally speaking, a shielding plate should be at least slightly larger than the MEMS device structure it is shielding (e.g., a movable MEMS structure such as an accelerometer proof mass or a gyroscope resonator), and the shielding plate cannot be in contact with the MEMS device structure during or after wafer bonding. Thus, a recess is formed to ensure that there is sufficient cavity space away from the top surface of the MEMS device structure. The shielding plate is electrically conductive and can be biased, e.g., to the same voltage as the opposing MEMS device structure in order to maintain zero electrostatic attraction force between the MEMS device structure and the shielding plate.

Abstract translation: 在标准ASIC晶片顶部金属层中形成一个或多个导电屏蔽板，例如，当MEMS器件直接由该芯片封装时，用于阻止从MEMS晶片上的MEMS器件结构到ASIC晶片上的电路的串扰 ASIC晶圆采用晶圆级芯片级封装。 一般来说，屏蔽板应至少稍微大于被屏蔽的MEMS器件结构（例如，可移动MEMS结构，例如加速度计质量块或陀螺仪谐振器），并且屏蔽板不能与MEMS接触 晶片接合期间或之后的器件结构。 因此，形成凹部以确保离开MEMS器件结构的顶表面有足够的空腔。 屏蔽板是导电的，并且可以被偏置，例如与相对的MEMS器件结构相同的电压，以便在MEMS器件结构和屏蔽板之间维持零静电吸引力。