公开(公告)号：US09905443B2

公开(公告)日：2018-02-27

申请号：US13598828

申请日：2012-08-30

申请人： Anantha K. Subramani ,  Joseph M. Ranish ,  Xiaoxiong Yuan ,  Ashish Goel ,  Joung Joo Lee

发明人： Anantha K. Subramani ,  Joseph M. Ranish ,  Xiaoxiong Yuan ,  Ashish Goel ,  Joung Joo Lee

IPC分类号： C23C14/54 ,  C23C16/48 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67115 ,  C23C14/541 ,  C23C16/481 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68742

摘要： Apparatus for improving temperature uniformity across a substrate are provided herein. In some embodiments, a deposition ring for use in a substrate processing system to process a substrate may include an annular body having a first surface, an opposing second surface, and a central opening passing through the first and second surfaces, wherein the second surface is configured to be disposed over a substrate support having a support surface to support a substrate having a given width, and wherein the opening is sized to expose a predominant portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect heat energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface.

公开(公告)号：US20120231633A1

公开(公告)日：2012-09-13

申请号：US13046261

申请日：2011-03-11

申请人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

发明人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

IPC分类号： H01L21/30 ,  H01L21/00

CPC分类号： C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一种处理在其第一表面中形成的孔的衬底的方法包括在孔的第一表面上沉积材料并通过加热衬底的与第一表面相对的第二表面来回流材料。 然后可以沉积第二种材料，部分地或完全地填充孔。 或者，可以执行循环沉积/回流工艺。

公开(公告)号：US08404048B2

公开(公告)日：2013-03-26

申请号：US13046261

申请日：2011-03-11

申请人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

发明人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

IPC分类号： C23C16/46 ,  C23C16/00 ,  H01L21/306

CPC分类号： C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一种处理在其第一表面中形成的孔的衬底的方法包括在孔的第一表面上沉积材料并通过加热衬底的与第一表面相对的第二表面来回流材料。 然后可以沉积第二种材料，部分地或完全地填充孔。 或者，可以执行循环沉积/回流工艺。

公开(公告)号：US09905444B2

公开(公告)日：2018-02-27

申请号：US13785539

申请日：2013-03-05

申请人： Joseph M. Ranish

发明人： Joseph M. Ranish

IPC分类号： G02B17/00 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02104 ,  G02B17/002 ,  H01L21/67115

摘要： Embodiments described herein generally relate to apparatus for heating substrates. The apparatus generally include a process chamber having a substrate support therein. A plurality of lamps is positioned to provide radiant energy through an optically transparent dome to a substrate positioned on the substrate support. A light focusing assembly is positioned within the chamber to influence heating and temperature distribution on the substrate and to facilitate formation of a film on a substrate having uniform properties, such as density. The light focusing assembly can include one or more reflectors, light pipes, or refractive lenses.

公开(公告)号：US08821643B2

公开(公告)日：2014-09-02

申请号：US13674737

申请日：2012-11-12

申请人： Balasubramanian Ramachandran ,  Tae Jung Kim ,  Jung Hoon Sun ,  Joung Woo Lee ,  Hwa Joong Lim ,  Sang Phil Lee ,  Joseph M. Ranish

发明人： Balasubramanian Ramachandran ,  Tae Jung Kim ,  Jung Hoon Sun ,  Joung Woo Lee ,  Hwa Joong Lim ,  Sang Phil Lee ,  Joseph M. Ranish

IPC分类号： B08B7/00

CPC分类号： B08B5/00 ,  B08B7/00 ,  B08B7/0071 ,  H01L21/324

摘要： A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

摘要翻译： 一种清洗用于退火掺杂晶圆基板的室的方法。 在一个实施方案中，该方法提供了在通过使一种或多种挥发气体进入退火室中的掺杂衬底的退火处理之后去除在退火室中沉积的掺杂剂，施加热量以挥发退火室中沉积的掺杂剂，并将该室排出 从退火室中除去挥发的掺杂剂。

公开(公告)号：US08765618B2

公开(公告)日：2014-07-01

申请号：US13485699

申请日：2012-05-31

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Joseph M. Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Joseph M. Ranish

IPC分类号： H01L21/268

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：USRE44712E1

公开(公告)日：2014-01-21

申请号：US13288586

申请日：2011-11-03

申请人： Joseph M. Ranish ,  Khurshed Sorabji

发明人： Joseph M. Ranish ,  Khurshed Sorabji

IPC分类号： H01J5/48

CPC分类号： H01K1/58 ,  H01K1/46 ,  H01L21/67115

摘要： A lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, a lamp base configured to receive the pair of leads, a sleeve having a wall thickness of at least about 0.013 inches and a potting compound having a thermal conductivity greater than about 100 W/(K-m).

摘要翻译： 公开了适用于基板热处理室以将基板加热至高达至少约1100℃的温度的灯组件。 在一个实施例中，灯组件包括封闭连接到一对引线的至少一个辐射生成细丝的灯泡，被配置为容纳一对引线的灯座，具有至少约0.013英寸的壁厚的套管和一个灌封 具有大于约100W /（Km）的热导率的化合物。

公开(公告)号：US20140004716A1

公开(公告)日：2014-01-02

申请号：US14012473

申请日：2013-08-28

申请人： Blake R. Koelmel ,  Norman L. Tam ,  Joseph M. Ranish

发明人： Blake R. Koelmel ,  Norman L. Tam ,  Joseph M. Ranish

IPC分类号： H01L21/263

CPC分类号： H01L21/2636 ,  H01L21/67098 ,  H01L21/67115

摘要： Methods and apparatus for processing substrates and controlling the heating and cooling of substrates are described. A radiation source providing radiation in a first range of wavelengths heats the substrate within a predetermined temperature range, the substrate being absorptive of radiation in a second range of wavelengths within the first range of wavelengths and within the predetermined temperature rang. A filter prevents at least a portion of radiation within the second wavelength range from reaching the substrate.

摘要翻译： 描述了用于处理衬底和控制衬底的加热和冷却的方法和设备。 提供在第一波长范围内的辐射的辐射源将衬底加热到​​预定温度范围内，所述衬底吸收第一波长范围内的第二波长范围内且在预定温度范围内的辐射。 滤光器防止第二波长范围内的至少一部分辐射到达基板。

公开(公告)号：US20130178072A1

公开(公告)日：2013-07-11

申请号：US13674737

申请日：2012-11-12

申请人： BALASUBRAMANIAN RAMACHANDRAN ,  Tae Jung Kim ,  Jung Hoon Sun ,  Joung Woo Lee ,  Hwa Joong Lim ,  Sang Phil Lee ,  Joseph M. Ranish

发明人： BALASUBRAMANIAN RAMACHANDRAN ,  Tae Jung Kim ,  Jung Hoon Sun ,  Joung Woo Lee ,  Hwa Joong Lim ,  Sang Phil Lee ,  Joseph M. Ranish

IPC分类号： B08B5/00 ,  H01L21/324

CPC分类号： B08B5/00 ,  B08B7/00 ,  B08B7/0071 ,  H01L21/324

摘要： A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

摘要翻译： 一种清洗用于退火掺杂晶圆基板的室的方法。 在一个实施方案中，该方法提供了在通过使一种或多种挥发气体进入退火室中的掺杂衬底的退火处理之后去除在退火室中沉积的掺杂剂，施加热量以挥发退火室中沉积的掺杂剂，并将该室排出 从退火室中除去挥发的掺杂剂。

公开(公告)号：US08367983B2

公开(公告)日：2013-02-05

申请号：US12483770

申请日：2009-06-12

申请人： Joseph M. Ranish ,  Aaron M. Hunter ,  Blake R. Koelmel ,  Bruce E. Adams

发明人： Joseph M. Ranish ,  Aaron M. Hunter ,  Blake R. Koelmel ,  Bruce E. Adams

IPC分类号： H05B3/68 ,  F27B5/14 ,  F26B19/00 ,  C23C16/00

CPC分类号： H01L21/67115

摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.

摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。