公开(公告)号：US07785486B2

公开(公告)日：2010-08-31

申请号：US10676295

申请日：2003-09-30

申请人： Andrea Urban ,  Franz Laermer ,  Klaus Breitschwerdt ,  Volker Becker

发明人： Andrea Urban ,  Franz Laermer ,  Klaus Breitschwerdt ,  Volker Becker

IPC分类号： G01L21/30 ,  B44C1/22 ,  C23F1/00

CPC分类号： B81C1/00579 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/3065

摘要： Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF3, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.

摘要翻译： 描述了使用等离子体将结构蚀刻到蚀刻体中，特别是通过蚀刻掩模以精确方式侧向限定的硅体中的凹陷的方法的附加变型。 另外，描述了将介电层或电介质基体和硅层中的结构（特别是具有高纵横比的沟槽）引入到这种方法中，各向同性的不均匀和/或各向同性， 在由硅制成的层的情况下在至少一些区域中制造结构之后进行层蚀刻，特别是使用氟基或高度氧化性的氟化合物如ClF 3。

公开(公告)号：US06709546B2

公开(公告)日：2004-03-23

申请号：US09871224

申请日：2001-05-31

申请人： Klaus Breitschwerdt ,  Volker Becker ,  Franz Laermer ,  Andrea Schilp

发明人： Klaus Breitschwerdt ,  Volker Becker ,  Franz Laermer ,  Andrea Schilp

IPC分类号： H01L21306

CPC分类号： H01J37/321 ,  H01J37/3266 ,  H01L21/3065

摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

摘要翻译： 通过使用电感耦合等离子体来蚀刻衬底，特别是硅体的器件和方法。 使用ICP源产生高频电磁交变场，通过反应气体中的高频电磁交变场的作用产生由反应性粒子构成的感应耦合等离子体。 此外，在基板和ICP源之间产生静态或时间可变的磁场，为此目的提供了一个彼此排列的至少两个磁场线圈。 所得磁场的方向也大致平行于连接衬底和电感耦合等离子体的连接线限定的方向。 最后，利用第一磁场线圈产生第一分量磁场，并且利用第二磁场线圈产生同等强度的第二分量磁场，所述双分量磁场取向为相反方向。

公开(公告)号：US07094706B2

公开(公告)日：2006-08-22

申请号：US10763010

申请日：2004-01-21

申请人： Klaus Breitschwerdt ,  Volker Becker ,  Franz Laermer ,  Andrea Schilp

发明人： Klaus Breitschwerdt ,  Volker Becker ,  Franz Laermer ,  Andrea Schilp

IPC分类号： H01L21/302

CPC分类号： H01J37/321 ,  H01J37/3266 ,  H01L21/3065

摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

公开(公告)号：US06720273B1

公开(公告)日：2004-04-13

申请号：US09763138

申请日：2001-04-20

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

IPC分类号： H01L213065

CPC分类号： H01J37/32174 ,  C30B33/12 ,  H01J37/32082 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3085 ,  H01L21/3086

摘要： A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate (10), in particular, a patterned silicon body, with the assistance of a plasma (14), is proposed. In the process, the plasma (14) is produced by a plasma source (13) to which a high-frequency generator (17) is connected for applying a high-frequency power. Moreover, this high-frequency generator is in communication with a first means which periodically changes the high-frequency power applied to the plasma source (13). Besides, provision is preferably made for a second means which adapts the output impedance of the high-frequency generator (17) to the prevailing impedance of the plasma source (13) which changes as a function of the high-frequency power. The proposed anisotropic etching method is carried out in separate and alternating etching and polymerization steps, a higher high-frequency power of up to 5000 watts being, at least temporarily, applied to the plasma source (13) during the etching steps than during the deposition steps. The proposed device is also suitable for igniting a plasma (14) and for adjusting upward or pulsing a plasma power from a starting value to up to 5000 watts.

摘要翻译： 提出了一种借助于等离子体（14）能够进行优选地各向异性地蚀刻衬底（10）特别是图案化硅体的装置和方法。 在该过程中，等离子体（14）由连接有高频发生器（17）的等离子体源（13）产生，以施加高频电力。 此外，该高频发生器与周期性地改变施加到等离子体源（13）的高频功率的第一装置通信。 此外，优选地对于将高频发生器（17）的输出阻抗适配为等离子体源（13）的主要阻抗（其随高频功率变化而变化）的第二装置进行设置。 所提出的各向异性蚀刻方法在分离和交替的蚀刻和聚合步骤中进行，在蚀刻步骤期间至少暂时施加高达5000瓦特的高频功率至等离子体源（13）比在沉积期间更高 脚步。 所提出的装置还适用于点燃等离子体（14）并且用于将等离子体功率从起始值向上调节或脉冲至高达5000瓦特。

公开(公告)号：US06200822B1

公开(公告)日：2001-03-13

申请号：US09269007

申请日：1999-06-17

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

IPC分类号： H01L2100

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01L21/30655 ,  H01L22/26

摘要： A method for detecting the transition between different materials in semiconductor structures during alternating etching and covering steps for anisotropic depthwise etching of defined patterns performed using a plasma. Provision is made for ascertaining, by way of an intensity measurement of at least one specific substance contained in the plasma, the beginning of each etching step by the fact that a characteristic threshold is reached, this also being achievable by way of an external synchronization signal which indicates the beginning and end of each etching step; for then, when the threshold value is reached, starting a delay time which is longer than the course of a first concentration maximum; for a second concentration maximum then to be ascertained after the delay time has elapsed; and for the second concentration maxima of the etching steps to be monitored as to whether they exceed or fall below the predefined value, in order to detect a material transition.

摘要翻译： 一种用于在交替蚀刻期间检测半导体结构中的不同材料之间的转变的方法以及使用等离子体进行的限定图案的各向异性深度蚀刻的覆盖步骤。 提供了通过对等离子体中包含的至少一种特定物质的强度测量来确定通过达到特征阈值的事实开始每个蚀刻步骤，这也可以通过外部同步信号来实现 其表示每个蚀刻步骤的开始和结束; 然后，当达到阈值时，启动比第一浓度最大值的过程更长的延迟时间; 对于第二浓度最大值，然后在延迟时间过去之后确定; 并且为了监测蚀刻步骤的第二浓度最大值是否超过或低于预定值，为了检测材料转变。

公开(公告)号：US20100203739A1

公开(公告)日：2010-08-12

申请号：US12452692

申请日：2008-07-02

申请人： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

发明人： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01L21/3065 ,  B81C1/00531 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01L21/02019 ,  H01L21/30621 ,  H01L21/32135

摘要： A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.

摘要翻译： 借助于选自ClF3和/或ClF5的蚀刻气体，通过SiGe混合半导体层的干法化学蚀刻来选择性地蚀刻硅半导体衬底上的SiGe混合半导体层的方法， 包括添加到蚀刻气体中的Cl 2和/或HCl。

公开(公告)号：US06531031B1

公开(公告)日：2003-03-11

申请号：US09623734

申请日：2000-11-22

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

IPC分类号： H01L2100

CPC分类号： H01J37/321

摘要： A plasma processing system for etching a substrate using a highly dense plasma in a reactor. An ICP coil having a first coil end and a second coil end generating a high-frequency electromagnetic alternating field in the reactor which acts on a reactive gas and, as an inductively coupled plasma source, produces the highly dense plasma from reactive particles and ions. The two coil ends each communicate via a feed point with a high-frequency infeed, which applies in each case a high-frequency a.c. voltage of the same frequency to the first coil end and to the second coil end (21, 21′). The two high-frequency a.c. voltages applied at the two coil ends are connected to a symmetrical, capacitive network via a &lgr;2 -delay line linking the first feed point and the second feed point and are, at least nearly in phase opposition to one another, and have at least nearly the same amplitudes.

摘要翻译： 一种用于在反应器中使用高密度等离子体蚀刻衬底的等离子体处理系统。 具有第一线圈端和第二线圈端的ICP线圈，其在反应器中产生作用于反应气体的高频电磁交变场，并且作为电感耦合等离子体源，从反应性粒子和离子产生高密度等离子体。 两个线圈端各自通过馈电点与高频电源进行通信，每种情况都适用于高频电源。 相同频率的电压到第一线圈端和第二线圈端（21,21'）。 两个高频a.c. 施加在两个线圈端处的电压通过连接第一馈电点和第二馈电点的lambd2 - 线路连接到对称的电容网络，并且至少几乎相互相反地并且具有至少接近于 相同的幅度。

公开(公告)号：US07811941B1

公开(公告)日：2010-10-12

申请号：US09762985

申请日：2000-06-06

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

IPC分类号： H01L21/311 ,  C03C15/00

CPC分类号： H01J37/321 ,  H01J37/3266 ,  H01L21/3065

摘要： A method and a device suitable for implementing this method for etching a substrate (10), a silicon body in particular, using an inductively coupled plasma (14) are proposed. For this purpose, a radio-frequency electromagnetic alternating field is generated with an ICP source (13), the alternating field generating an inductively coupled plasma (14) of reactive particles in a reactor (15). The inductively coupled plasma (14) arises by the action of the radio-frequency electromagnetic alternating field on a reactive gas. Furthermore, a device is provided with which a plasma power injected into the inductively coupled plasma (14) via the radio-frequency electromagnetic alternating field with the ICP source (13) is capable of being pulsed so that at least from time to time a pulsed radio-frequency power can be injected into the inductively coupled plasma (14) as a pulsed radio-frequency power. In addition, the pulsed plasma power can be combined or correlated with a pulsed magnetic field and/or a pulsed substrate electrode power.

摘要翻译： 提出了一种适用于实现用于蚀刻衬底（10），特别是使用电感耦合等离子体（14）的硅体的方法和装置。 为此，利用ICP源（13）产生射频电磁交变场，所述交变场在反应器（15）中产生电感耦合等离子体（14）的反应性粒子。 电感耦合等离子体（14）由反应气体上的射频电磁交变场的作用产生。 此外，提供了一种装置，其中通过与ICP源（13）的射频电磁交变场注入到电感耦合等离子体（14）中的等离子体功率能够被脉冲，使得至少不时地具有脉冲 射频功率可以作为脉冲射频功率注入到电感耦合等离子体（14）中。 此外，脉冲等离子体功率可以与脉冲磁场和/或脉冲衬底电极功率组合或相关。

公开(公告)号：US06340644B1

公开(公告)日：2002-01-22

申请号：US09355299

申请日：1999-09-20

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

IPC分类号： H01L2131

CPC分类号： H01L21/02118 ,  B05D1/02 ,  H01L21/02282 ,  H01L21/312

摘要： A method for applying a protective resist, such as a negative resist, to a prepatterned wafer in which the resist is applied to the previously generated patterns by a distribution system which includes a holder for the wafer, an xy sliding unit with a programming device, and a dispensing device with a syringe.

摘要翻译： 将保护性抗蚀剂（例如负性抗蚀剂）施加到通过包括用于晶片的保持器的分配系统，具有编程设备的xy滑动单元施加到先前产生的图案的预制图案化晶片的方法， 和具有注射器的分配装置。

公开(公告)号：US07052623B1

公开(公告)日：2006-05-30

申请号：US09581663

申请日：1999-09-22

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

IPC分类号： H01L21/00

CPC分类号： H01L21/30655 ,  B81C1/00571 ,  B81C2201/014

摘要： A method is proposed for etching a first silicon layer (15) that is provided with an etching mask (10) for defining lateral recesses (21). In a first plasma etching process, trenches (21′) are produced in the region of the lateral recesses (21) by anisotropic etching. The first etching process comes virtually to a standstill as soon as a separating layer (12, 14, 14′, 16), buried between the first silicon layer (15) and a further silicon layer (17), is reached. This separating layer is thereupon etched through in exposed regions (23, 23′) by a second etching process. A subsequent third etching process then etches the further silicon layer (17, 17′). In this manner, free-standing structures for sensor elements can be produced in a simple process which is completely compatible with the method steps in IC integration technology.

摘要翻译： 提出了一种蚀刻第一硅层（15）的方法，第一硅层（15）设置有用于限定横向凹槽（21）的蚀刻掩模（10）。 在第一等离子体蚀刻工艺中，通过各向异性蚀刻在横向凹槽（21）的区域中产生沟槽（21'）。 一旦达到掩埋在第一硅层（15）和另一硅层（17）之间的分离层（12,14,14'，16），第一蚀刻工艺实际上就停滞了。 然后通过第二蚀刻工艺在曝光区域（23,23'）中蚀刻该分离层。 接下来的第三蚀刻工艺然后蚀刻另外的硅层（17,17'）。 以这种方式，可以以与IC集成技术中的方法步骤完全兼容的简单过程来生产传感器元件的独立结构。