公开(公告)号：US09184057B2

公开(公告)日：2015-11-10

申请号：US14005746

申请日：2012-02-29

申请人： Andreas Klipp ,  Guenter Oetter ,  Sabrina Montero Pancera ,  Andrei Honciuc ,  Christian Bittner

发明人： Andreas Klipp ,  Guenter Oetter ,  Sabrina Montero Pancera ,  Andrei Honciuc ,  Christian Bittner

IPC分类号： G03F7/32 ,  G03F7/40 ,  H01L21/308 ,  G03F7/20

CPC分类号： H01L21/3083 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/405

摘要： A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.

摘要翻译： 一种用于制造集成电路器件，光学器件，微机械和机械精密器件的方法，所述方法包括以下步骤：（1）提供具有线间距尺寸为50nm或更小的纵向比为> 2的图案化材料层的衬底 ; （2）通过使衬底与含有至少一种具有至少一个阳离子的至少一种无氟阳离子表面活性剂A的含水无氟溶液S接触至少一次来提供正电荷或负电荷的表面， 或潜在的阳离子基团，至少一种具有至少一个阴离子或潜在阴离子基团的至少一种无氟阴离子表面活性剂A或至少一种无氟两性表面活性剂A; 和（3）从与基板的接触中除去无水的无水溶液S.

公开(公告)号：US08927476B2

公开(公告)日：2015-01-06

申请号：US13805891

申请日：2011-07-12

申请人： Raimund Mellies ,  Andreas Klipp

发明人： Raimund Mellies ,  Andreas Klipp

IPC分类号： C11D1/62 ,  C11D3/34 ,  C11D3/06 ,  C11D3/20 ,  C11D3/30 ,  C11D3/37 ,  C11D11/00 ,  C11D1/34

CPC分类号： C11D3/349 ,  C11D1/345 ,  C11D1/66 ,  C11D1/667 ,  C11D1/72 ,  C11D3/0073 ,  C11D3/06 ,  C11D3/2068 ,  C11D3/2086 ,  C11D3/30 ,  C11D3/3757 ,  C11D3/378 ,  C11D11/0017 ,  C11D11/0041 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074 ,  H05K3/1208 ,  H05K2203/0793

摘要： Aqueous alkaline composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline composition.

摘要翻译： 所述组合物包含（A）具有至少一个伯氨基和至少一个巯基的硫代氨基酸，（B）季铵氢氧化物，（C） 螯合和/或腐蚀抑制剂，其选自具有至少两个伯氨基的脂族和脂环族胺，以及具有至少一个羟基的脂族和脂环族胺，（D）选自炔属醇类的非离子表面活性剂 ，烷氧基化炔醇和烷氧基化脱水山梨醇单羧酸单酯; 使用碱性组合物来处理可用于制造电气和光学器件的衬底; 以及用于处理用于制造使用所述含水碱性组合物的电气和光学器件的衬底的方法。

公开(公告)号：US09275851B2

公开(公告)日：2016-03-01

申请号：US14006617

申请日：2012-02-28

申请人： Andreas Klipp ,  Vijay Immanuel Raman ,  Shyam Sundar Venkataraman ,  Raimund Mellies ,  Mingjie Zhong

发明人： Andreas Klipp ,  Vijay Immanuel Raman ,  Shyam Sundar Venkataraman ,  Raimund Mellies ,  Mingjie Zhong

IPC分类号： C11D1/72 ,  C11D1/722 ,  C11D3/20 ,  H01L21/02 ,  C11D3/37 ,  C11D1/66 ,  C11D3/00 ,  C11D1/825 ,  C11D11/00 ,  G03F7/42

CPC分类号： H01L21/02074 ,  C11D1/662 ,  C11D1/72 ,  C11D1/721 ,  C11D1/722 ,  C11D1/825 ,  C11D3/0073 ,  C11D3/2041 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/3757 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/426

摘要： Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.

摘要翻译： 提供了无水的无氮清洁组合物，其制备和用途。 具有5至8的pH的组合物包含（A）两亲性非离子，水溶性或水分散性表面活性剂和（B）选自具有至少3个羧酸基团的多元羧酸的金属螯合剂。 该组合物用于从半导体衬底去除残留物和污染物。

公开(公告)号：US09146471B2

公开(公告)日：2015-09-29

申请号：US13319187

申请日：2010-04-20

申请人： Andreas Klipp

发明人： Andreas Klipp

IPC分类号： G03F7/42 ,  H01L21/302 ,  G03F7/20 ,  H01L21/02 ,  H01L21/311

CPC分类号： G03F7/425 ,  G03F7/20 ,  H01L21/02063 ,  H01L21/31133

摘要： A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to

摘要翻译： 一种不含N-烷基吡咯烷酮和羟胺及其衍生物的液体组合物，其在50℃下的动态剪切粘度为1至10mPas，通过旋转粘度测定测量，并包含基于组合物的完整重量，（A） 在溶解的四甲基氢氧化铵（B）的存在下显示的极性有机溶剂的40至99.95重量％，对于含有深UV吸收发色团的30nm厚的聚合物屏障抗反射层，在50℃下的恒定去除速率 ，（B）为0.05至0.5％的季铵氢氧化物，和（C）<5重量％的水; 其制备方法，用于制造电子器件的方法及其用于消除负色调和正色调光致抗蚀剂以及在制造3D堆叠集成电路和3D晶片级封装中的后蚀刻残留物的用途，通过图案化通过硅通孔和/ 或通过电镀和碰撞。

公开(公告)号：US20130157919A1

公开(公告)日：2013-06-20

申请号：US13805891

申请日：2011-07-12

申请人： Raimund Mellies ,  Andreas Klipp

发明人： Raimund Mellies ,  Andreas Klipp

IPC分类号： C11D3/34

CPC分类号： C11D3/349 ,  C11D1/345 ,  C11D1/66 ,  C11D1/667 ,  C11D1/72 ,  C11D3/0073 ,  C11D3/06 ,  C11D3/2068 ,  C11D3/2086 ,  C11D3/30 ,  C11D3/3757 ,  C11D3/378 ,  C11D11/0017 ,  C11D11/0041 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074 ,  H05K3/1208 ,  H05K2203/0793

摘要： Aqueous alkaline cleaning composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline cleaning composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline cleaning composition.

摘要翻译： 所述组合物包含（A）具有至少一个伯氨基和至少一个巯基的硫代氨基酸，（B）季铵氢氧化物，（C） 选自具有至少两个伯氨基的脂族和脂环族胺和具有至少一个羟基的脂族和脂环族胺的螯合和/或腐蚀抑制剂，（D）选自炔属的非离子表面活性剂 醇，烷氧基乙炔醇和烷氧基化脱水山梨糖醇单羧酸单酯; 使用碱性清洁组合物来处理可用于制造电气和光学装置的基底; 以及用于处理用于制造使用所述含水碱性清洁组合物的电气和光学装置的基板的方法。

公开(公告)号：US20120058644A1

公开(公告)日：2012-03-08

申请号：US13319187

申请日：2010-04-20

申请人： Andreas Klipp

发明人： Andreas Klipp

IPC分类号： H01L21/302 ,  G03F7/42

CPC分类号： G03F7/425 ,  G03F7/20 ,  H01L21/02063 ,  H01L21/31133

摘要： A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to

摘要翻译： 一种不含N-烷基吡咯烷酮和羟胺及其衍生物的液体组合物，其在50℃下的动态剪切粘度为1至10mPas，通过旋转粘度测定测量，并包含基于组合物的完整重量，（A） 在溶解的四甲基氢氧化铵（B）的存在下显示的极性有机溶剂的40至99.95重量％，对于含有深UV吸收发色团的30nm厚的聚合物屏障抗反射层，在50℃下的恒定去除速率 ，（B）为0.05至0.5％的季铵氢氧化物，和（C）<5重量％的水; 其制备方法，用于制造电子器件的方法及其用于消除负色调和正色调光致抗蚀剂以及在制造3D堆叠集成电路和3D晶片级封装中的后蚀刻残留物的用途，通过图案化通过硅通孔和/ 或通过电镀和碰撞。

公开(公告)号：US20110046314A1

公开(公告)日：2011-02-24

申请号：US12989665

申请日：2009-04-28

申请人： Andreas Klipp ,  Arno Lange ,  Hans-Joachim Haehnle

发明人： Andreas Klipp ,  Arno Lange ,  Hans-Joachim Haehnle

IPC分类号： C08L85/00 ,  C08L83/00 ,  C08L85/04

CPC分类号： H01B3/441 ,  C08G77/00 ,  C08J9/26 ,  C08J2383/00

摘要： The invention relates to a dielectric layer with a permittivity of 3.5 or less comprising a dielectric obtainable by polymerizing at least one twin monomer comprising a) a first monomer unit which comprises a metal or semimetal, and b) a second monomer unit which is connected to the first monomer unit via a chemical bond, wherein the polymerization involves polymerizing the twin monomer with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize via a common mechanism.

摘要翻译： 本发明涉及介电常数为3.5或更低的电介质层，其包含通过聚合至少一种双单体得到的电介质，该电介质包含：a）包含金属或半金属的第一单体单元，以及b）第二单体单元，其连接到 所述第一单体单元经由化学键，其中所述聚合涉及使所述双体单体聚合，所述化学键断裂并形成包含所述第一单体单元的第一聚合物和包含所述第二单体单元的第二聚合物，并且其中所述第一和 第二单体单元通过公共机构聚合。

公开(公告)号：US07879395B2

公开(公告)日：2011-02-01

申请号：US11582239

申请日：2006-10-17

申请人： Andreas Klipp ,  Stephan Wege ,  Tobias Mayer-Uhma ,  Cornelia Klein ,  Alexander Michaelis ,  Falko Schlenkrich

发明人： Andreas Klipp ,  Stephan Wege ,  Tobias Mayer-Uhma ,  Cornelia Klein ,  Alexander Michaelis ,  Falko Schlenkrich

IPC分类号： B05D3/12

CPC分类号： H01L21/02282 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/316

摘要： A method of preparing a coating solution, comprising the steps of providing a first solution comprising a lower alcohol; a polyethylene glycol; a complexing agent; and water; providing a second solution comprising a higher alcohol; and at least one metal alkoxide, wherein the metal in said at least one metal alkoxide is selected from the group consisting of zirconium, aluminium, titanium, tantalum and yttrium; forming a sol-gel solution by mixing said first and second solutions and thereby hydrolyzing said at least one metal alkoxide to a metal oxide and an alcohol; forming a concentrated solution by removing said lower alcohol and the alcohol resulting from the hydrolysis of said at least one metal alkoxide; and forming a coating solution by adding a medium alcohol to said concentrated solution.

摘要翻译： 一种制备涂布溶液的方法，包括以下步骤：提供包含低级醇的第一溶液; 聚乙二醇; 络合剂 和水; 提供包含高级醇的第二溶液; 和至少一种金属醇盐，其中所述至少一种金属醇盐中的金属选自锆，铝，钛，钽和钇; 通过混合所述第一和第二溶液形成溶胶 - 凝胶溶液，从而将所述至少一种金属醇盐水解成金属氧化物和醇; 通过除去由所述至少一种金属醇盐的水解产生的所述低级醇和醇形成浓缩溶液; 以及通过向所述浓缩溶液中加入中等醇形成涂布溶液。

公开(公告)号：US20130171765A1

公开(公告)日：2013-07-04

申请号：US13817935

申请日：2011-08-25

申请人： Simon Braun ,  Andreas Klipp ,  Cornelia Roeger-Goepfert ,  Christian Bittner ,  MeiChin Shen ,  Chengwei Lin

发明人： Simon Braun ,  Andreas Klipp ,  Cornelia Roeger-Goepfert ,  Christian Bittner ,  MeiChin Shen ,  Chengwei Lin

IPC分类号： H01L21/306 ,  H01L31/18 ,  C09K13/08

CPC分类号： H01L21/30604 ,  C09K13/08 ,  H01L21/30608 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50 ,  Y10T428/24355

摘要： An aqueous acidic solution and an aqueous acidic etching solution suitable for texturizing the surface of single crystal and polycrystal silicon substrates, hydrofluoric acid; nitric acid; and at least one anionic polyether, which is surface active; a method for texturizing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texturization consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturizing method.

摘要翻译： 酸性水溶液和适用于使单晶和多晶硅衬底的表面变形的酸性酸性溶液，氢氟酸; 硝酸; 和至少一种表面活性的阴离子聚醚; 一种用于使单晶和多晶硅衬底的表面纹理化的方法，包括以下步骤：（1）使基底的至少一个主表面与所述酸性酸性蚀刻溶液接触; （2）在衬底的至少一个主表面上蚀刻足以获得由凹陷和凸起组成的表面纹理化的时间和温度; 和（3）将所述基材的至少一个主表面与所述酸性蚀刻溶液接触; 以及使用该溶液制造光伏电池和太阳能电池的方法以及所述组织化方法。

公开(公告)号：US20110076416A1

公开(公告)日：2011-03-31

申请号：US12993871

申请日：2009-05-20

申请人： Andreas Klipp ,  Norbert Wagner ,  Cyrill Zagar ,  Andreas Fechtenkötter ,  Chih-Cheng Peng ,  Chien Hsueh Steve Shih ,  Sujandi Sujandi

发明人： Andreas Klipp ,  Norbert Wagner ,  Cyrill Zagar ,  Andreas Fechtenkötter ,  Chih-Cheng Peng ,  Chien Hsueh Steve Shih ,  Sujandi Sujandi

IPC分类号： C08J9/36 ,  C08J7/18 ,  C08G77/60 ,  B05D5/12

CPC分类号： H01L21/02203 ,  B01D53/228 ,  B01D71/70 ,  C08G77/06 ,  C08J9/28 ,  C08J2383/04 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/3121

摘要： The present invention concerns a method of making a porous material comprising the following steps in the order a-b-c-d: (a) reacting at least one organosilane (A) with water in the presence of a solvent (C) to form a polymeric material, (b) subjecting said polymeric material to a first heat treatment, (c) bringing said polymeric material into contact with at least one dehydroxylation agent (D), (d) subjecting said polymeric material to electromagnetic radiation and/or to a further heat treatment. The present invention furthermore concerns the porous material obtainable by the inventive method, semiconductor devices and electronic components comprising said porous material, and the use of said material for electrical insulation and in microelectronic devices, membranes, displays and sensors.

摘要翻译： 本发明涉及制备多孔材料的方法，其顺序包括以下步骤：（a）在溶剂（C）存在下使至少一种有机硅烷（A）与水反应形成聚合物材料，（b ）使所述聚合材料经受第一热处理，（c）使所述聚合材料与至少一种脱羟基化剂（D）接触，（d）使所述聚合材料经受电磁辐射和/或进一步热处理。 本发明还涉及通过本发明方法可获得的多孔材料，包括所述多孔材料的半导体器件和电子部件以及所述用于电绝缘的材料以及在微电子器件，膜，显示器和传感器中的用途。