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17 条记录 (耗时 0.037 秒)

    Multi-Zone Resistive Heater
    1.
    发明申请
    Multi-Zone Resistive Heater 有权
    多区电阻加热器

    公开(公告)号：US20090314762A1

    公开(公告)日：2009-12-24

    申请号：US12485160

    申请日：2009-06-16

    申请人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob W. Smith ,  R. Suryanarayanan Iyer ,  Joseph Yudovsky ,  Sean M. Seutter

    发明人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob W. Smith ,  R. Suryanarayanan Iyer ,  Joseph Yudovsky ,  Sean M. Seutter

    IPC分类号： H05B3/68

    CPC分类号： H01L21/67103 ,  H01L21/67248 ,  H05B3/68

    摘要： Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

    摘要翻译： 公开了用于加热基底的装置，反应器和方法。 该装置包括一个舞台，包括主体和具有支撑衬底的区域的表面，耦合到舞台的轴，设置在舞台的身体的中心区域内的第一加热元件，以及至少第二和第三加热元件 设置在所述台体内，所述至少第二和第三加热元件各自部分地围绕所述第一加热元件，并且其中所述至少第二和第三加热元件彼此周向相邻。

    SUBSTRATE HEATING METHOD AND APPARATUS
    3.
    发明申请
    SUBSTRATE HEATING METHOD AND APPARATUS 审中-公开
    基板加热方法和装置

    公开(公告)号：US20080197125A1

    公开(公告)日：2008-08-21

    申请号：US11675856

    申请日：2007-02-16

    申请人： ANQING CUI ,  Sean M. Seutter ,  Jacob W. Grayson ,  R. Suryanarayanan Iyer

    发明人： ANQING CUI ,  Sean M. Seutter ,  Jacob W. Grayson ,  R. Suryanarayanan Iyer

    IPC分类号： H05B3/10 ,  G06F19/00

    CPC分类号： H01L21/67103 ,  H01L21/67109 ,  H01L21/6875

    摘要： Embodiments of substrate heating methods and apparatus are provided herein. In one embodiment, a substrate heater is provided including a heater plate having a top surface and an opposing bottom surface, a recess formed in the top surface, the recess having a feature having an upper surface for supporting a substrate, wherein the depth from a bottom surface of the recess to the upper surface of the feature is at least 5 mils. One or more pads may be disposed in the recess for supporting a substrate. The heater plate may have a thickness of about 19 mm. One or more indentations may be formed in the bottom surface of the recess for altering the rate of heat transfer to a portion of a substrate disposed above the indentation during processing. The heater plate may be utilized in a process chamber for performing heat-assisted processes.

    摘要翻译： 本文提供了基板加热方法和装置的实施例。 在一个实施例中，提供了一种衬底加热器，其包括具有顶表面和相对底表面的加热器板，在顶表面中形成的凹部，该凹部具有用于支撑衬底的上表面的特征，其中， 该凹槽的底表面至该特征的上表面至少为5密耳。 一个或多个垫可以设置在凹槽中用于支撑基底。 加热器板可以具有约19mm的厚度。 可以在凹部的底表面中形成一个或多个凹口，用于改变在处理期间设置在压痕上方的衬底的一部分的热传递速率。 加热器板可以用在用于执行热辅助工艺的处理室中。

    METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SiBN DEPOSITION
    9.
    发明申请
    METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SiBN DEPOSITION 审中-公开
    低温和低K SiBN沉积的方法和装置

    公开(公告)号：US20080145536A1

    公开(公告)日：2008-06-19

    申请号：US11610424

    申请日：2006-12-13

    申请人： KANGZHAN ZHANG ,  Sean M. Seutter ,  Jacob Grayson ,  R. Suryanarayanan Iyer

    发明人： KANGZHAN ZHANG ,  Sean M. Seutter ,  Jacob Grayson ,  R. Suryanarayanan Iyer

    IPC分类号： C23C16/00

    CPC分类号： C23C16/34 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/31111 ,  H01L21/318 ,  H01L29/4966 ,  H01L29/6659

    摘要： A method and apparatus for depositing silicon boron nitride films is provided. The apparatus comprises a chamber, a gas mixing block connected to the chamber, and separate boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor gas line systems that are connected to the gas mixing block. Methods of depositing a silicon boron nitride film in the apparatus are provided. In another aspect, a method of depositing a silicon boron nitride film includes reacting a boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor in a chamber, wherein a ratio of the flow rate of the nitrogen-containing precursor into the chamber to the flow rate of the boron-containing precursor is greater than or equal to about 10.

    摘要翻译： 提供了一种用于沉积硅氮化硼膜的方法和装置。 所述装置包括连接到所述室的室，气体混合块和连接到所述气体混合块的分离的含硼前体，含硅前体和含氮前体气体管线系统。 提供了在该装置中沉积硅氮化硼膜的方法。 在另一方面，沉积硅氮化硼膜的方法包括在室中使含硼前体，含硅前体和含氮前体反应，其中含氮前体的流速与 所述含硼前体的流速大于或等于约10。

    Method for silicon nitride chemical vapor deposition
    10.
    发明授权
    Method for silicon nitride chemical vapor deposition 失效
    氮化硅化学气相沉积方法

    公开(公告)号：US07365029B2

    公开(公告)日：2008-04-29

    申请号：US11152501

    申请日：2005-06-14

    申请人： R. Suryanarayanan Iyer ,  Sean M. Seutter ,  Sanjeev Tandon ,  Errol Antonio C. Sanchez ,  Shulin Wang

    发明人： R. Suryanarayanan Iyer ,  Sean M. Seutter ,  Sanjeev Tandon ,  Errol Antonio C. Sanchez ,  Shulin Wang

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02208 ,  H01L21/02271 ,  H01L21/3185

    摘要： Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R′2)—Si(R′2)—NR2 (amino(di)silanes), R3—Si—N═N═N (silyl azides), R′3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R′ comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.

    摘要翻译： 本发明的实施方案通常提供一种沉积含有硅（Si）和氮（N）的膜的方法。 在一个实施例中，该方法包括将设置在处理室中的基板加热至低于约650摄氏度的温度，使含氮气体流入处理室，使含硅气体流入处理室，并将 衬底上的含SiN层。 含硅气体是被鉴定为NR 2 -Si（R'2）-Si（R'2）-Si（R'2）-Si ）-NR 2（氨基（二）硅烷），R 3 -Si-NNN（甲硅烷基叠氮化物），R'3 -Si- NR-NR 2（甲硅烷基肼）或1,3,4,5,7,8-六甲基四硅氮烷，其中R和R'包含至少一个选自以下的官能团：卤素， 具有一个或多个双键的有机基团，具有一个或多个三键的有机基团，脂肪族烷基，环状烷基，芳族基团，有机硅基团，烷基氨基或含有N或Si的环状基团。