公开(公告)号：US11931855B2

公开(公告)日：2024-03-19

申请号：US16885753

申请日：2020-05-28

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Tapash Chakraborty ,  Prayudi Lianto ,  Prerna Sonthalia Goradia ,  Giback Park ,  Chintan Buch ,  Pin Gian Gan ,  Alex Hung

IPC: B24B37/04 ,  B24B21/04 ,  B24B37/07 ,  B24B37/14

CPC classification number: B24B37/042 ,  B24B21/04 ,  B24B37/14 ,  B24B37/07

Abstract: Embodiments of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates. More specifically, embodiments of the present disclosure relate to planarization of surfaces on substrates for advanced packaging applications, such as surfaces of polymeric material layers. In one implementation, the method includes mechanically grinding a substrate surface against a polishing surface in the presence of a grinding slurry during a first polishing process to remove a portion of a material formed on the substrate; and then chemically mechanically polishing the substrate surface against the polishing surface in the presence of a polishing slurry during a second polishing process to reduce any roughness or unevenness caused by the first polishing process.

公开(公告)号：US20220071023A1

公开(公告)日：2022-03-03

申请号：US17005954

申请日：2020-08-28

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Steven Verhaverbeke ,  Han-Wen Chen ,  Chintan Buch ,  Prerna Goradia ,  Giback Park ,  Kyuil Cho

IPC: H05K3/38 ,  H05K3/00 ,  B32B7/12 ,  B32B15/08

Abstract: Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.

公开(公告)号：US10074559B1

公开(公告)日：2018-09-11

申请号：US15452394

申请日：2017-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Geetika Bajaj ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Bhaskar Kumar ,  Deenesh Padhi

IPC: H01L21/32 ,  H01L21/768

Abstract: Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.

公开(公告)号：US12134822B2

公开(公告)日：2024-11-05

申请号：US17529463

申请日：2021-11-18

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Nitin Deepak ,  Prerna Sonthalia Goradia ,  Bahubali S. Upadhye ,  Nilesh Chimanrao Bagul ,  Subramanya P. Herle ,  Visweswaren Sivaramakrishnan

IPC: C23C16/44

Abstract: Exemplary methods of removing lithium-containing deposits may include heating a surface of a lithium-containing deposit. The surface may include oxygen or nitrogen, and the lithium-containing deposit may be disposed on a surface of a processing chamber. The methods may include contacting the surface of the lithium-containing deposit with a hydrogen-containing precursor. The contacting may hydrogenate the surface of the lithium-containing deposit. The methods may include contacting the lithium-containing deposit with a nitrogen-containing precursor to form volatile byproducts. The methods may include exhausting the volatile byproducts of the lithium-containing deposit from the processing chamber.

公开(公告)号：US10407789B2

公开(公告)日：2019-09-10

申请号：US15835067

申请日：2017-12-07

Applicant: Applied Materials, Inc.

Inventor： Balaji Ganapathy ,  Ankur Kadam ,  Prerna S. Goradia ,  Laksheswar Kalita ,  Tapash Chakraborty ,  Vijay Bhan Sharma

IPC: C25D3/44 ,  C25D5/44 ,  C25D5/48 ,  C25D5/18 ,  C25D7/00 ,  C25D5/50 ,  C25D9/08 ,  C25D11/04 ,  C25D5/02

Abstract: In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.

公开(公告)号：US20150147879A1

公开(公告)日：2015-05-28

申请号：US14483578

申请日：2014-09-11

Applicant: Applied Materials, Inc.

Inventor： Amit Chatterjee ,  Geetika Bajaj ,  Pramit Manna ,  He Ren ,  Tapash Chakraborty ,  Srinivas D. Nemani ,  Mehul Naik ,  Robert Jan visser ,  Abhijit Basu Mallick

IPC: H01L21/768

CPC classification number: H01L21/76834 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76838 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules.

Abstract translation: 描述了在半导体电路的金属互连上沉积有效扩散阻挡层的薄的低介电常数层的方法。 每个具有头部和尾部的分子的自组装单层（SAM）沉积在金属上。 SAM分子自对准，其中头部部分被配制成选择性地键合到金属层，离开设置在分子远端的尾部。 随后在SAM上沉积介电层，化学键合到SAM分子的尾部。

公开(公告)号：US12216243B2

公开(公告)日：2025-02-04

申请号：US16905703

申请日：2020-06-18

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Tapashree Roy ,  Prerna Sonthalia Goradia ,  Srobona Sen ,  Robert Jan Visser ,  Nitin Deepak ,  Tapash Chakraborty

IPC: G02F1/1339 ,  B32B3/20 ,  G02B1/06

Abstract: Embodiments described herein relate to flat optical devices and methods of forming flat optical devices. One embodiment includes a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d, and a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first encapsulation layer is disposed over the first arrangement of the first plurality of pillars. The first encapsulation layer has a refractive index of about 1.0 to about 1.5. The first encapsulation layer, the substrate, and each of the pillars of the first arrangement define a first space therebetween. The first space has a refractive index of about 1.0 to about 1.5.

公开(公告)号：US11705365B2

公开(公告)日：2023-07-18

申请号：US17323381

申请日：2021-05-18

Applicant: Applied Materials, Inc.

Inventor： Wei-Sheng Lei ,  Kurtis Leschkies ,  Roman Gouk ,  Giback Park ,  Kyuil Cho ,  Tapash Chakraborty ,  Han-Wen Chen ,  Steven Verhaverbeke

IPC: H01L21/768 ,  H01L21/48

CPC classification number: H01L21/76825 ,  H01L21/486 ,  H01L21/76877

Abstract: The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging. The methods described herein enable the formation of high-quality, low-aspect-ratio micro-via structures with improved uniformity, thus facilitating thin and small-form-factor semiconductor devices having high I/O density with improved bandwidth and power.

公开(公告)号：US20220396732A1

公开(公告)日：2022-12-15

申请号：US17836578

申请日：2022-06-09

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Visweswaren Sivaramakrishnan ,  Nilesh Chimanrao Bagul ,  Bahubali S. Upadhye

IPC: C09K13/00

Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a β-diketone to form a volatile alkali metal β-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.

公开(公告)号：US20220162747A1

公开(公告)日：2022-05-26

申请号：US17529463

申请日：2021-11-18

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Nitin Deepak ,  Prerna Sonthalia Goradia ,  Bahubali S. Upadhye ,  Nilesh Chimanrao Bagul ,  Subramanya P. Herle ,  Visweswaren Sivaramakrishnan

IPC: C23C16/44

Abstract: Exemplary methods of removing lithium-containing deposits may include heating a surface of a lithium-containing deposit. The surface may include oxygen or nitrogen, and the lithium-containing deposit may be disposed on a surface of a processing chamber. The methods may include contacting the surface of the lithium-containing deposit with a hydrogen-containing precursor. The contacting may hydrogenate the surface of the lithium-containing deposit. The methods may include contacting the lithium-containing deposit with a nitrogen-containing precursor to form volatile byproducts. The methods may include exhausting the volatile byproducts of the lithium-containing deposit from the processing chamber.