公开(公告)号：US20240139900A1

公开(公告)日：2024-05-02

申请号：US18101025

申请日：2023-01-24

Applicant: Applied Materials, Inc.

Inventor： Jeonghoon Oh ,  Jianshe Tang ,  Steven M. Zuniga ,  Brian J. Brown ,  Andrew J. Nagengast ,  Derek R. Witty ,  Rushabhkumar Desai ,  Shih-Haur Shen ,  Haosheng Wu ,  Yufei Hu

IPC: B24B37/005 ,  B24B37/04

CPC classification number: B24B37/005 ,  B24B37/042

Abstract: A chemical mechanical polishing apparatus has a platen to support a polishing pad, a carrier head comprising a rigid housing and configured to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish the substrate, an in-situ carrier head monitoring system including a sensor positioned to interact with the housing and to detect vibrational motion of the housing and generate signals based on the detected vibrational motion, and a controller. The controller is configured to generate a value for a carrier head status parameter based on received signals from the in-situ carrier head monitoring system, and change a polishing parameter or generate an alert based on the carrier head status parameter.

公开(公告)号：US10236182B2

公开(公告)日：2019-03-19

申请号：US15432605

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Sungjin Kim ,  Deenesh Padhi ,  Sung Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

IPC: B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  H01L21/311 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/02

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

公开(公告)号：US10074534B2

公开(公告)日：2018-09-11

申请号：US15636239

申请日：2017-06-28

Applicant: Applied Materials, Inc.

Inventor： Swayambhu P. Behera ,  Shahid Shaikh ,  Pramit Manna ,  Mandar B. Pandit ,  Tersem Summan ,  Patrick Reilly ,  Deenesh Padhi ,  Bok Hoen Kim ,  Heung Lak Park ,  Derek R. Witty

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  C23C16/26 ,  C23C16/50

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80° C. to about 550° C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.

公开(公告)号：US09721784B2

公开(公告)日：2017-08-01

申请号：US14770412

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Swayambhu P. Behera ,  Shahid Shaikh ,  Pramit Manna ,  Mandar B. Pandit ,  Tersem Summan ,  Patrick Reilly ,  Deenesh Padhi ,  Bok Hoen Kim ,  Heung Lak Park ,  Derek R. Witty

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  C23C16/26 ,  C23C16/50

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source:plasma-initiating gas:dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.

公开(公告)号：US09570303B2

公开(公告)日：2017-02-14

申请号：US14736848

申请日：2015-06-11

Applicant: Applied Materials, Inc.

Inventor： Sungjin Kim ,  Deenesh Padhi ,  Sung Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

IPC: H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  B44C1/22 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

Abstract translation: 提供了一种在处理室中的衬底上形成氮掺杂非晶碳层的方法。 该方法通常包括在衬底上沉积预定厚度的牺牲电介质层，通过去除牺牲介电层的部分以暴露衬底的上表面，在衬底上形成图案化特征，共形地沉积氮掺杂的预定厚度 在图案化特征上的无定形碳层和衬底的暴露的上表面，使用各向异性蚀刻工艺从图案化特征的上表面和衬底的上表面选择性地去除氮掺杂非晶碳层，以提供图案化特征 填充在由氮掺杂非晶碳层形成的侧壁间隔物内，并且从衬底去除图案化特征。

公开(公告)号：US20140349490A1

公开(公告)日：2014-11-27

申请号：US14371989

申请日：2013-01-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Sungjin Kim ,  Deenesh Padhi ,  Sung Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

Abstract translation: 提供了一种在处理室中的衬底上形成氮掺杂非晶碳层的方法。 该方法通常包括在衬底上沉积预定厚度的牺牲电介质层，通过去除牺牲介电层的部分以暴露衬底的上表面，在衬底上形成图案化特征，共形地沉积氮掺杂的预定厚度 在图案化特征上的无定形碳层和衬底的暴露的上表面，使用各向异性蚀刻工艺从图案化特征的上表面和衬底的上表面选择性地去除氮掺杂非晶碳层，以提供图案化特征 填充在由氮掺杂非晶碳层形成的侧壁间隔物内，并且从衬底去除图案化特征。