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公开(公告)号:US20210302330A1
公开(公告)日:2021-09-30
申请号:US16831575
申请日:2020-03-26
发明人: Guoheng Zhao , Mehdi Vaez-Iravani
IPC分类号: G01N21/956 , G01N21/95
摘要: Methods for performing imaging reflectometry measurements include illuminating a measurement area on a sample using an input beam having a first peak wavelength, and obtaining multiple images of the measurement area using portions of the input beam reflected from the sample. A reflectance intensity value is determined for each of a plurality of pixels in each of the images. A parameter associated with the particular structure is determined using the reflectance intensity value.
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公开(公告)号:US10816464B2
公开(公告)日:2020-10-27
申请号:US16295173
申请日:2019-03-07
发明人: Guoheng Zhao , Mehdi Vaez-Iravani , Todd J. Egan
IPC分类号: G01N21/55
摘要: An imaging reflectometer includes a source module configured to generate a plurality of input beams at different nominal wavelengths. An illumination pupil having a first numerical aperture (NA) is arranged so that each of the plurality of input beams passes through the illumination pupil. A large field lens is configured to receive at least a portion of each of the plurality of input beams and provide substantially telecentric illumination over a sample being imaged. The large field lens is also configured to receive reflected portions of the substantially telecentric illumination reflected from the sample. The reflected portions pass through an imaging pupil having a second NA that is lower than the first NA and are received by an imaging sensor module that generates image information.
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公开(公告)号:US11856833B2
公开(公告)日:2023-12-26
申请号:US17152688
申请日:2021-01-19
发明人: Yeishin Tung , Byung Sung Kwak , Robert Jan Visser , Guoheng Zhao , Todd J. Egan , Dinesh Kabra , Gangadhar Banappanavar
IPC分类号: H01L51/56 , H10K71/00 , C23C14/56 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/12 , H10K71/70 , H10K71/16
CPC分类号: H10K71/00 , C23C14/12 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/568 , H10K71/164 , H10K71/70
摘要: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
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公开(公告)号:US20230213444A1
公开(公告)日:2023-07-06
申请号:US18122106
申请日:2023-03-15
发明人: Todd J. Egan , Avishek Ghosh , Edward W. Budiarto , Guoheng Zhao
CPC分类号: G01N21/41 , G01P13/00 , G01B11/303 , G01B11/0625 , G01N2201/06113 , G01N2201/127 , G01N2201/062
摘要: Described are systems and techniques directed to optical inspection of moving products (wafers, substrates, films, patterns) that are being transported to or from processing chambers in device manufacturing systems. Implementations include a system that has a first source of light to direct a first light to a first location on a surface of a product. The first light generates, at the first location, a first reflected light. The system further includes a first optical sensor to generate a first data representative of a first reflected light, and a processing device, in communication with the first optical sensor to determine, using the first data, a property of the product.
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公开(公告)号:US20220367217A1
公开(公告)日:2022-11-17
申请号:US17321366
申请日:2021-05-14
发明人: Guoheng Zhao , Venkatakaushik Voleti , Todd J. Egan , Kyle R. Tantiwong , Andreas Schulze , Niranjan Ramchandra Khasgiwale , Mehdi Vaez-Iravani
摘要: Methods and systems for monitoring etch or deposition processes using image-based in-situ process monitoring techniques include illuminating a measurement area on a sample disposed in a process chamber. The measurement area is illuminated using an input beam generated remote from the process chamber and transmitted to a first viewing window of the process chamber by a first optical fiber. Portions of the first input beam reflected from the measurement area are transmitted from the first viewing window to an imaging sensor by a second optical fiber. A sequence of images is obtained at the imaging sensor, and a change in reflectance of pixels within each of the images is determined. The etch or deposition process is monitored based on the change in reflectance.
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公开(公告)号:US11156566B2
公开(公告)日:2021-10-26
申请号:US16831575
申请日:2020-03-26
发明人: Guoheng Zhao , Mehdi Vaez-Iravani
IPC分类号: G01N21/95 , G01N21/956
摘要: Methods for performing imaging reflectometry measurements include illuminating a measurement area on a sample using an input beam having a first peak wavelength, and obtaining multiple images of the measurement area using portions of the input beam reflected from the sample. A reflectance intensity value is determined for each of a plurality of pixels in each of the images. A parameter associated with the particular structure is determined using the reflectance intensity value.
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公开(公告)号:US11112231B2
公开(公告)日:2021-09-07
申请号:US16672233
申请日:2019-11-01
发明人: Guoheng Zhao
摘要: A reflectometer or ellipsometer integrated with a processing tool includes a source module configured to generate a input beam, and a first mirror arranged to receive the input beam. The first mirror is configured to collimate the input beam and direct the input beam toward an aperture plate. The aperture plate has at least two apertures. One of the at least two apertures is arranged to define a measurement beam from a portion of the input beam, and one of the at least two apertures is arranged to define a reference beam from a portion of the input beam. An optical element is arranged within an optical path of the reference beam and outside an optical path of the measurement beam. The optical element is configured to direct the reference beam toward a third mirror. A second mirror is arranged to receive the measurement beam and focus the measurement beam through a window and onto a surface of a sample. The window forms part of a chamber of the processing tool and the sample is disposed within the chamber. At least a portion of the measurement beam is reflected from the surface of the sample as a reflected beam. The second mirror is arranged to receive the reflected beam and direct the reflected beam toward the optical element. The optical element is configured to direct the reflected beam toward the third mirror. The third mirror is arranged to receive the reference beam and the reflected beam and focus the reference beam and the reflected beam onto a collection plane.
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公开(公告)号:US20210131786A1
公开(公告)日:2021-05-06
申请号:US16672233
申请日:2019-11-01
发明人: Guoheng Zhao
摘要: A reflectometer or ellipsometer integrated with a processing tool includes a source module configured to generate a input beam, and a first mirror arranged to receive the input beam. The first mirror is configured to collimate the input beam and direct the input beam toward an aperture plate. The aperture plate has at least two apertures. One of the at least two apertures is arranged to define a measurement beam from a portion of the input beam, and one of the at least two apertures is arranged to define a reference beam from a portion of the input beam. An optical element is arranged within an optical path of the reference beam and outside an optical path of the measurement beam. The optical element is configured to direct the reference beam toward a third mirror. A second mirror is arranged to receive the measurement beam and focus the measurement beam through a window and onto a surface of a sample. The window forms part of a chamber of the processing tool and the sample is disposed within the chamber. At least a portion of the measurement beam is reflected from the surface of the sample as a reflected beam. The second mirror is arranged to receive the reflected beam and direct the reflected beam toward the optical element. The optical element is configured to direct the reflected beam toward the third mirror. The third mirror is arranged to receive the reference beam and the reflected beam and focus the reference beam and the reflected beam onto a collection plane.
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公开(公告)号:US10599044B1
公开(公告)日:2020-03-24
申请号:US16267353
申请日:2019-02-04
摘要: The present disclosure generally relates to lithography devices comprising an image projection system. The image projection system comprises a fiber bundle coupled to a first homogenizer and a second homogenizer. The first homogenizer is offset from the second homogenizer along a scan direction. The first homogenizer is optically aligned with a first digital micromirror device, and the second homogenizer is optically aligned with a second digital micromirror device. The first digital micromirror device is offset from the second digital micromirror device along the scan direction within an optical field of view of a projection lens. A scan field of the first digital micromirror device overlaps or aligns with a scan field of the second digital micromirror device to eliminate a gap between the scan field of the first digital micromirror device and the scan field of the second digital micromirror device.
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公开(公告)号:US20240130210A1
公开(公告)日:2024-04-18
申请号:US18395081
申请日:2023-12-22
发明人: Yeishin Tung , Byung Sung Kwak , Robert Jan Visser , Guoheng Zhao , Todd J. Egan , Dinesh Kabra , Gangadhar Banappanavar
IPC分类号: H10K71/00 , C23C14/12 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/56 , H10K71/16 , H10K71/70
CPC分类号: H10K71/00 , C23C14/12 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/568 , H10K71/164 , H10K71/70
摘要: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
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