SUBSTRATE HOT SPOT CORRECTION FOR A CHEMICAL MECHANICAL POLISHING PROCESSS

    公开(公告)号:US20250153303A1

    公开(公告)日:2025-05-15

    申请号:US18510157

    申请日:2023-11-15

    Abstract: A method of processing a substrate, includes placing a front surface of a substrate disposed in a carrier head on a polishing surface of a pad. The method further includes delivering a first fluid onto the polishing surface using a first fluid delivery arm. The method further includes determining a location of a hot spot on the front surface. The method further includes determining a rotational orientation of the substrate relative to the carrier head. The method further includes treating the hot spot while polishing the front surface on the polishing surface using a second fluid delivery arm to deliver a second fluid to the polishing surface at a location that will intersect with the hot spot during polishing of the front surface of the substrate.

    PROCESS CONTROL METHOD FOR PATTERN WAFER INDEX POLISHING

    公开(公告)号:US20240371646A1

    公开(公告)日:2024-11-07

    申请号:US18611430

    申请日:2024-03-20

    Abstract: In one embodiment, a method of processing a substrate in a chemical mechanical polishing (CMP) system, comprises determining an orientation of a substrate relative to a first carrier head. The method further includes initiating a polishing process of a surface of the substrate engaged with a polishing pad. The method further includes scanning, during the polishing process, a first portion of the surface of the substrate repeatedly using at least one endpoint sensor coupled to the polishing pad to generate orientation dependent scan data of a property of the first portion of the surface. The method further includes comparing the orientation dependent scan data to a library of orientation dependent scan data to determine when the endpoint of the polishing process has been reached.

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