Abstract:
Embodiments herein relate to a retaining ring for use in a polishing process. The retaining ring includes an annular body having an upper surface and a lower surface. An inner surface is connected to the upper surface and the lower surface. The inner surface includes one or more surfaces that are used to retain a substrate during processing. The one or more surfaces have an angle relative to a central axis of the retaining ring. The inner surface also includes a plurality of facets. Channels are disposed within the retaining ring to allow passage of a polishing fluid from an inner surface to an outer surface of the retaining ring disposed opposite of the inner surface.
Abstract:
A buff module and method for using the same are provided. In one embodiment, a buff module includes housing having an interior volume, a plurality of drive rollers and a pair of buff heads. The drive rollers are arranged to rotate a substrate within the interior volume on a substantially horizontal axis. The buff heads are disposed in the housing, each buff head rotatable on an axis substantially aligned with the horizontal axis and movable to a position substantially parallel with the horizontal axis.
Abstract:
A method of processing a substrate includes polishing a front surface of a substrate on a first pad coupled to a first platen. The method further includes transferring the substrate from the first pad to a second pad coupled to a second platen with a carrier head. The method further includes moving the carrier head to a scan position to place an edge of the substrate above an orientation sensor disposed at a rotational center of the second pad. The method further includes scanning the edge of the substrate with the orientation sensor to produce a signal. The method further includes analyzing the signal to locate a reference mark of the substrate to determine a rotational orientation of the substrate relative to the carrier head.
Abstract:
Embodiments herein relate to a retaining ring for use in a polishing process. The retaining ring includes an annular body having an upper surface and a lower surface. An inner surface is connected to the upper surface and the lower surface. The inner surface includes one or more surfaces that are used to retain a substrate during processing. The one or more surfaces have an angle relative to a central axis of the retaining ring. The inner surface also includes a plurality of facets. Channels are disposed within the retaining ring to allow passage of a polishing fluid from an inner surface to an outer surface of the retaining ring disposed opposite of the inner surface.
Abstract:
An apparatus for drying of wet substrates in a post CMP cleaning apparatus is provided. The apparatus provides a waterfall or shallow reservoir of rinsing solution, such as DIW, through which a substrate may be lifted. A solvent vapor may be provided at the rinsing solution interface on the substrate, such as in a Marangoni process. In certain embodiments, the volume of solution through which the substrate is lifted is reduced, which may provide for reduced or eliminated particle reattachment to the substrate.
Abstract:
A chemical mechanical polishing (CMP) system include apparatus and methods to clean brushes used to scrub substrates, including brush cleaning using periodic chemical treatment. One or more embodiments include a method of operating the CMP system to rotate a first one or more scrubber brushes while the first one or more scrubber brushes are in contact with a first substrate, performing, concurrent with the rotating during the first time duration, a cleaning operation for a second one or more scrubber brushes, performing, during a second time duration of the cleaning cycle, the cleaning operation for the first one or more scrubber brushes, and rotating, concurrent with the performing the cleaning operation during the second time duration, the second one or more scrubber brushes while the second one or more scrubber brushes are in contact with a second substrate.
Abstract:
The present disclosure relates to load cups that include an annular substrate station configured to receive a substrate. The annular substrate station surrounds a nebulizer located within the load cup. The nebulizer includes a set of energized fluid nozzles disposed on an upper surface of the nebulizer adjacent to an interface between the annular substrate station and the nebulizer. The set of energized fluid nozzles are configured to release energized fluid at an upward angle relative to the upper surface.
Abstract:
Embodiments of the present apparatus and methods for post CMP clean. More particularly, embodiments provide apparatus and methods for removing nano sized particles. One embodiment provides a method for cleaning a substrate. The method includes exposing the substrate to a viscoelastic fluid to remove small particles from the substrate. The viscoelastic fluid comprising a viscosity adjustor and an aqueous base.
Abstract:
A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP system with a first fluid delivery arm and a second fluid delivery arm disposed over the polishing pad to dispense fluid, such as a polishing fluid or water, and/or provide a vacuum pressure. The second fluid delivery arm is configured to dispense a fluid or vacuum pressure onto the polishing pad to effect the polishing rate at the edge of the substrate.
Abstract:
Certain aspects of the present disclosure provide techniques for a method of removing material on a substrate. An exemplary method includes rotating a substrate about a first axis in a first direction and urging a surface of the substrate against a polishing surface of a polishing pad while rotating the substrate, wherein rotating the substrate about the first axis includes rotating the substrate a first angle at a first rotation rate, and then rotating the substrate a second angle at a second rotation rate, and the first rotation rate is different from the second rotation rate.