公开(公告)号：US20160240410A1

公开(公告)日：2016-08-18

申请号：US15139274

申请日：2016-04-26

Applicant: Applied Materials, Inc.

Inventor： Paul B. Reuter ,  Ganesh Balasubramanian ,  JuanCarlos Rocha-Alvarez ,  Jeffrey B. Robinson ,  Dale Robert du Bois ,  Paul Connors

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677

CPC classification number: H01L21/67178 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67313 ,  H01L21/67712 ,  Y10T29/49998

Abstract: A substrate lift assembly is disclosed. The substrate lift assembly includes a lift frame, a plurality of fingers extending from the frame, the fingers adapted to support a substrate, and a containment ring supported by the lift frame. Process load locks including the substrate lift assembly are disclosed, as are other aspects.

Abstract translation: 公开了一种基板升降组件。 基板升降组件包括升降架，从框架延伸的多个指状物，适于支撑基板的指状物以及由升降机架支撑的收容环。 与其他方面一样，公开了包括基板升降组件的过程负载锁定。

公开(公告)号：US09355876B2

公开(公告)日：2016-05-31

申请号：US14203098

申请日：2014-03-10

Applicant: Applied Materials, Inc.

Inventor： Paul B. Reuter ,  Ganesh Balasubramanian ,  JuanCarlos Rocha-Alvarez ,  Jeffrey B. Robinson ,  Dale Robert du Bois ,  Paul Connors

IPC: B23Q3/16 ,  H01L21/67

CPC classification number: H01L21/67178 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67313 ,  H01L21/67712 ,  Y10T29/49998

Abstract: A process load lock apparatus is disclosed. The process load lock apparatus includes a load lock chamber adapted to couple between a mainframe section and a factory interface, the load lock chamber including an entry and an exit each having a slit valve, and a load lock process chamber located at a different level than the load lock chamber at the load lock location wherein the load lock process chamber is adapted to carry out a process on a substrate, such as oxide removal or other processes. Systems including the process load lock apparatus and methods of operating the process load lock apparatus are provided. A lift assembly including a containment ring is also disclosed, as are numerous other aspects.

Abstract translation: 公开了一种加工装载锁定装置。 过程加载锁定装置包括适于联接在主机部分和工厂接口之间的装载锁定室，该装载锁定室包括一个入口和一个出口，每个入口和出口均具有狭缝阀，而负载锁定处理室位于与 在负载锁定位置处的负载锁定室，其中负载锁定处理室适于在衬底上执行诸如氧化物去除或其它过程的过程。 提供了包括过程加载锁定装置和操作加工装载锁定装置的方法的系统。 还公开了包括容纳环的电梯组件，以及许多其它方面。

公开(公告)号：US09490154B2

公开(公告)日：2016-11-08

申请号：US14598061

申请日：2015-01-15

Applicant: Applied Materials, Inc.

Inventor： Abraham Ravid ,  Todd Egan ,  Paul Connors ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: H01L21/68 ,  G03F7/20 ,  H01L21/66 ,  H01L21/308 ,  H01L21/67 ,  G03F9/00 ,  H01L21/027 ,  H01L23/544

CPC classification number: H01L21/682 ,  G03F7/70 ,  G03F9/70 ,  G03F9/7023 ,  G03F9/7034 ,  G03F9/7042 ,  H01L21/027 ,  H01L21/308 ,  H01L21/3083 ,  H01L21/67063 ,  H01L22/20 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for alignment of substrate-scale masks are described. The alignment methods presented may improve the uniformity and repeatability of processes which are impacted by the relative lateral position of a substrate-scale mask and a substrate. The methods involve measuring the “overhang” of the substrate at multiple locations around the periphery of the substrate-scale mask. Based on the measurements, the relative position of the substrate relative to the substrate-scale mask is modified by adjustment of the substrate and/or mask position. The adjustment of the relative position is made in one adjustment in embodiments. A feature of hardware and methods involves the capability of making measurements and adjustments while a substrate processing system is fully assembled and possibly under vacuum.

Abstract translation: 描述了用于校准衬底尺度掩模的方法和系统。 所提出的对准方法可以改善由衬底尺度掩模和衬底的相对横向位置影响的工艺的均匀性和重复性。 所述方法包括测量在基底刻度掩模周围的多个位置处的基底的“突出”。 基于测量，通过调整衬底和/或掩模位置来修改衬底相对于衬底刻度掩模的相对位置。 在实施例中的一个调整中进行相对位置的调整。 硬件和方法的特征涉及在基板处理系统完全组装并且可能在真空下进行测量和调整的能力。

公开(公告)号：US20160211185A1

公开(公告)日：2016-07-21

申请号：US14598061

申请日：2015-01-15

Applicant: Applied Materials, Inc.

Inventor： Abraham Ravid ,  Todd Egan ,  Paul Connors ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/308

CPC classification number: H01L21/682 ,  G03F7/70 ,  G03F9/70 ,  G03F9/7023 ,  G03F9/7034 ,  G03F9/7042 ,  H01L21/027 ,  H01L21/308 ,  H01L21/3083 ,  H01L21/67063 ,  H01L22/20 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for alignment of substrate-scale masks are described. The alignment methods presented may improve the uniformity and repeatability of processes which are impacted by the relative lateral position of a substrate-scale mask and a substrate. The methods involve measuring the “overhang” of the substrate at multiple locations around the periphery of the substrate-scale mask. Based on the measurements, the relative position of the substrate relative to the substrate-scale mask is modified by adjustment of the substrate and/or mask position. The adjustment of the relative position is made in one adjustment in embodiments. A feature of hardware and methods involves the capability of making measurements and adjustments while a substrate processing system is fully assembled and possibly under vacuum.

Abstract translation: 描述了用于校准衬底尺度掩模的方法和系统。 所提出的对准方法可以改善由衬底尺度掩模和衬底的相对横向位置影响的工艺的均匀性和重复性。 所述方法包括测量在基底刻度掩模周围的多个位置处的基底的“突出”。 基于测量，通过调整衬底和/或掩模位置来修改衬底相对于衬底刻度掩模的相对位置。 在实施例中的一个调整中进行相对位置的调整。 硬件和方法的特征涉及在基板处理系统完全组装并且可能在真空下进行测量和调整的能力。

公开(公告)号：US10950445B2

公开(公告)日：2021-03-16

申请号：US16942171

申请日：2020-07-29

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Jiarui Wang ,  Kwangduk Douglas Lee ,  Milind Gadre ,  Xiaoquan Min ,  Paul Connors

IPC: H01L21/225 ,  C23C16/24 ,  C23C16/42 ,  G03F1/38 ,  H01L21/033 ,  C23C16/455 ,  H01L21/3205 ,  H01L21/768

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.

公开(公告)号：US10679830B2

公开(公告)日：2020-06-09

申请号：US15625721

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Feng Bi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Paul Connors

IPC: H01J37/32

Abstract: Embodiments of the invention generally relate to methods for removing a boron-carbon layer from a surface of a processing chamber using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a processing chamber includes positioning the pedestal at a first distance from the showerhead, and exposing a deposited boron-carbon layer to a first plasma process where the first plasma process comprises generating a plasma that comprises water vapor and a first carrier gas by biasing a showerhead that is disposed over a pedestal, and positioning the pedestal at a second distance from the showerhead and exposing the deposited boron-carbon layer to a second plasma process where the second plasma process comprises generating a plasma that comprises water vapor and a second carrier gas by biasing the showerhead and biasing a side electrode relative to the showerhead.

公开(公告)号：US11031262B2

公开(公告)日：2021-06-08

申请号：US16838128

申请日：2020-04-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC: C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US10734232B2

公开(公告)日：2020-08-04

申请号：US15977388

申请日：2018-05-11

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Jiarui Wang ,  Kwangduk Douglas Lee ,  Milind Gadre ,  Xiaoquan Min ,  Paul Connors

IPC: H01L21/225 ,  G03F1/38 ,  H01L21/033 ,  C23C16/42 ,  C23C16/24 ,  C23C16/455 ,  H01L21/3205 ,  H01L21/768

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.

公开(公告)号：US10403515B2

公开(公告)日：2019-09-03

申请号：US15013547

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC: C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20140262036A1

公开(公告)日：2014-09-18

申请号：US14203098

申请日：2014-03-10

Applicant: Applied Materials, Inc.

Inventor： Paul B. Reuter ,  Ganesh Balasubramanian ,  JuanCarlos Rocha-Alvarez ,  Jeffrey B. Robinson ,  Dale Robert du Bois ,  Paul Connors

IPC: B23Q3/16

CPC classification number: H01L21/67178 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67313 ,  H01L21/67712 ,  Y10T29/49998

Abstract: A process load lock apparatus is disclosed. The process load lock apparatus includes a load lock chamber adapted to couple between a mainframe section and a factory interface, the load lock chamber including an entry and an exit each having a slit valve, and a load lock process chamber located at a different level than the load lock chamber at the load lock location wherein the load lock process chamber is adapted to carry out a process on a substrate, such as oxide removal or other processes. Systems including the process load lock apparatus and methods of operating the process load lock apparatus are provided. A lift assembly including a containment ring is also disclosed, as are numerous other aspects.

Abstract translation: 公开了一种加工装载锁定装置。 过程加载锁定装置包括适于联接在主机部分和工厂接口之间的装载锁定室，该装载锁定室包括一个入口和一个出口，每个入口和出口均具有狭缝阀，而负载锁定处理室位于与 在负载锁定位置处的负载锁定室，其中负载锁定处理室适于在衬底上执行诸如氧化物去除或其它过程的过程。 提供了包括过程加载锁定装置和操作加工装载锁定装置的方法的系统。 还公开了包括容纳环的电梯组件，以及许多其它方面。