公开(公告)号：US20180025890A1

公开(公告)日：2018-01-25

申请号：US15719465

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Soo Young CHOI ,  John M. WHITE ,  Qunhua WANG ,  Li HOU ,  Ki Woon KIM ,  Shinichi KURITA ,  Tae Kyung WON ,  Suhail ANWAR ,  Beom Soo PARK ,  Robin L. TINER

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/509 ,  C23C16/34

CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.