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    GROUND RETURN FOR PLASMA PROCESSES
    1.
    发明申请
    GROUND RETURN FOR PLASMA PROCESSES 审中-公开
    等离子体工艺的接地返回

    公开(公告)号：US20160305025A1

    公开(公告)日：2016-10-20

    申请号：US15196751

    申请日：2016-06-29

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young CHOI ,  Robin L. TINER ,  Shinichi KURITA ,  John M. WHITE ,  Carl A. SORENSEN ,  Jeffrey A. KHO ,  Suhail ANWAR ,  Makoto INAGAWA ,  Gaku FURUTA

    IPC: C23C16/509

    CPC classification number: C23C16/5096 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/67069

    Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

    Abstract translation: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。 该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和 电极或其组合。

    HEATING AND COOLING OF SUBSTRATE SUPPORT
    2.
    发明申请
    HEATING AND COOLING OF SUBSTRATE SUPPORT 审中-公开
    基板支撑的加热和冷却

    公开(公告)号：US20150364350A1

    公开(公告)日：2015-12-17

    申请号：US14834324

    申请日：2015-08-24

    Applicant: Applied Materials, Inc.

    Inventor： John M. WHITE ,  Robin L. TINER

    IPC: H01L21/67 ,  C23C14/22 ,  C23C16/46

    CPC classification number: H01L21/67103 ,  C23C14/22 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  H01J2237/2001 ,  H01L21/67109

    Abstract: A process chamber and a method for controlling the temperature of a substrate positioned on a substrate support assembly within the process chamber are provided. The substrate support assembly includes a thermally conductive body, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, and two or more cooling channels embedded within the thermally conductive body to be coplanar with the one or more heating elements. The cooling channels may be branched into two or more equal-length cooling passages being extended from a single point inlet and into a single point outlet to provide equal resistance cooling.

    Abstract translation: 提供了处理室和用于控制位于处理室内的基板支撑组件上的基板的温度的方法。 衬底支撑组件包括导热体，导热体表面上的衬底支撑表面，并且适于支撑其上的大面积衬底，一个或多个嵌入导热体内的加热元件，以及两个或多个冷却通道 嵌入在导热体内以与一个或多个加热元件共面。 冷却通道可以分支成两个或更多个等长的冷却通道，其从单个点入口延伸到单个点出口以提供相等的电阻冷却。

    GAS CONFINER ASSEMBLY FOR ELIMINATING SHADOW FRAME
    6.
    发明申请
    GAS CONFINER ASSEMBLY FOR ELIMINATING SHADOW FRAME 审中-公开
    用于消除阴影框架的气体限制器组件

    公开(公告)号：US20150211121A1

    公开(公告)日：2015-07-30

    申请号：US14610531

    申请日：2015-01-30

    Applicant: Applied Materials, Inc.

    Inventor： Lai ZHAO ,  Qunhua WANG ,  Robin L. TINER ,  Soo Young CHOI ,  Beom Soo PARK

    IPC: C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  C23C16/458

    CPC classification number: C23C16/45591 ,  C23C16/4585 ,  H01J37/32449 ,  H01J37/32715

    Abstract: The present disclosure relates to a gas confiner assembly designed to reduce the non-uniform deposition rates by confining the gas flow and changing the local gas flow distribution near the edge regions of the substrate. The material, size, shape and other features of the gas confiner assembly can be varied based on the processing requirements and associated deposition rates. In one embodiment, a gas confiner assembly for a processing chamber comprises a gas confiner configured to decrease gas flow and compensate for high deposition rates on edge regions of substrates. The gas confiner assembly also comprises a cover disposed below the gas confiner. The cover is configured to prevent a substrate support from being exposed to plasma.

    Abstract translation: 本公开涉及一种气体收集器组件，其被设计成通过限制气流并改变靠近基板的边缘区域的局部气流分布来减小不均匀的沉积速率。 气体配制器组件的材料，尺寸，形状和其他特征可以根据加工要求和相关的沉积速率而变化。 在一个实施例中，用于处理室的气体配制器组件包括配置成减小气体流量并补偿衬底边缘区域上的高沉积速率的气体配料器。 气体收集器组件还包括设置在气体分配器下方的盖。 盖被配置成防止基板支撑件暴露于等离子体。

    PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN
    9.
    发明申请
    PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN 审中-公开
    气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号：US20160056019A1

    公开(公告)日：2016-02-25

    申请号：US14932618

    申请日：2015-11-04

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young CHOI ,  John M. WHITE ,  Qunhua WANG ,  Li Hou ,  Ki Woon KIM ,  Shinichi KURITA ,  Tae Kyung WON ,  Suhail ANWAR ,  Beom Soo Park ,  Robin L. TINER

    IPC: H01J37/32

    CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

    Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    Abstract translation: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

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