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    SLIT VALVE DOOR WITH MOVING MATING PART
    2.
    发明申请
    SLIT VALVE DOOR WITH MOVING MATING PART 审中-公开
    滑动门与移动部分

    公开(公告)号：US20140023460A1

    公开(公告)日：2014-01-23

    申请号：US14035829

    申请日：2013-09-24

    Applicant: Applied Materials, Inc.

    Inventor： Mehran BEHDJAT ,  Shinichi KURITA ,  John M. WHITE ,  Suhail ANWAR ,  Makoto INAGAWA

    IPC: H01L21/67 ,  F16K15/14

    CPC classification number: H01L21/67126 ,  F16K51/02

    Abstract: Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.

    Abstract translation: 本文公开的实施例通常涉及用于密封腔室中的开口的狭缝阀门组件。 当狭缝阀开口收缩时，被压靠在腔室上以密封狭缝阀开口的狭缝阀门随着腔室移动，使得压紧在狭缝阀门和腔室之间的O形环可以与狭缝阀门一起移动，并且 房间。 因此，可能会发生O形环相对于室的摩擦较少。 随着摩擦的减少，可能产生更少的颗粒，并且可以延长O形环的寿命。 随着O形圈的寿命更长，衬底产量可能会增加。

    LARGE-AREA HIGH-DENSITY PLASMA PROCESSING CHAMBER FOR FLAT PANEL DISPLAYS
    4.
    发明申请
    LARGE-AREA HIGH-DENSITY PLASMA PROCESSING CHAMBER FOR FLAT PANEL DISPLAYS 审中-公开

    公开(公告)号：US20200347499A1

    公开(公告)日：2020-11-05

    申请号：US16400923

    申请日：2019-05-01

    Applicant: Applied Materials, Inc.

    Inventor： Suhail ANWAR ,  Yui Lun WU ,  Jozef KUDELA ,  Carl A. SORENSEN ,  Jeevan Prakash SEQUEIRA

    IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505

    Abstract: Embodiments described herein provide a lid assembly of a chamber for independent control of plasma density and gas distribution within the interior volume of the chamber. The lid assembly includes a plasma generation system and a gas distribution assembly. The plasma generation system includes a plurality of dielectric plates having a bottom surface oriented with respect to vacuum pressure and a top surface operable to be oriented with respect to atmospheric pressure. One or more coils are positioned on or over the plurality of dielectric plates. The gas distribution assembly includes a first diffuser and a second diffuser. The first diffuser includes a plurality of first channels intersecting a plurality of second channels of the second diffuser.

    GROUND RETURN FOR PLASMA PROCESSES
    6.
    发明申请
    GROUND RETURN FOR PLASMA PROCESSES 审中-公开
    等离子体工艺的接地返回

    公开(公告)号：US20160305025A1

    公开(公告)日：2016-10-20

    申请号：US15196751

    申请日：2016-06-29

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young CHOI ,  Robin L. TINER ,  Shinichi KURITA ,  John M. WHITE ,  Carl A. SORENSEN ,  Jeffrey A. KHO ,  Suhail ANWAR ,  Makoto INAGAWA ,  Gaku FURUTA

    IPC: C23C16/509

    CPC classification number: C23C16/5096 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/67069

    Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

    Abstract translation: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。 该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和 电极或其组合。

    TIGHTLY FITTED CERAMIC INSULATOR ON LARGE AREA ELECTRODE
    7.
    发明申请
    TIGHTLY FITTED CERAMIC INSULATOR ON LARGE AREA ELECTRODE 有权
    在大面积电极上贴合陶瓷绝缘子

    公开(公告)号：US20150273490A1

    公开(公告)日：2015-10-01

    申请号：US14726067

    申请日：2015-05-29

    Applicant: Applied Materials, Inc.

    Inventor： Jozef KUDELA ,  Jonghoon BAEK ,  John M. WHITE ,  Robin TINER ,  Suhail ANWAR ,  Gaku FURUTA

    IPC: B05B1/18

    CPC classification number: B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

    Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

    Abstract translation: 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

    PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN
    10.
    发明申请
    PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN 审中-公开
    气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号：US20160056019A1

    公开(公告)日：2016-02-25

    申请号：US14932618

    申请日：2015-11-04

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young CHOI ,  John M. WHITE ,  Qunhua WANG ,  Li Hou ,  Ki Woon KIM ,  Shinichi KURITA ,  Tae Kyung WON ,  Suhail ANWAR ,  Beom Soo Park ,  Robin L. TINER

    IPC: H01J37/32

    CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

    Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    Abstract translation: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

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