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    THIN FILM ENCAPSULATION MASK PREHEAT AND SUBSTRATE BUFFER CHAMBER
    2.
    发明申请
    THIN FILM ENCAPSULATION MASK PREHEAT AND SUBSTRATE BUFFER CHAMBER 审中-公开

    公开(公告)号：US20180119285A1

    公开(公告)日：2018-05-03

    申请号：US15787328

    申请日：2017-10-18

    Applicant: Applied Materials, Inc.

    Inventor： Shinichi KURITA ,  Makoto INAGAWA ,  Suhas BHOSKI

    IPC: C23C16/52 ,  C23C16/02

    CPC classification number: C23C16/52 ,  C23C14/042 ,  C23C14/568 ,  C23C16/0209 ,  C23C16/042 ,  C23C16/54

    Abstract: Embodiments described herein relate to a thermal chamber utilized in the processing of display substrates. The thermal chamber may be part of a larger processing system configured to manufacture OLED devices. The thermal chamber may be configured to heat and cool masks and/or substrates utilized in deposition processes in the processing system. The thermal chamber may include a chamber body defining a volume sized to receive one or more cassettes containing a plurality of masks and/or substrates. Heaters coupled to the chamber body within the volume may be configured to controllably heat masks and/or substrates prior to deposition processes and cool the masks and/or substrates after deposition processes.

    GROUND RETURN FOR PLASMA PROCESSES
    3.
    发明申请
    GROUND RETURN FOR PLASMA PROCESSES 审中-公开
    等离子体工艺的接地返回

    公开(公告)号：US20160305025A1

    公开(公告)日：2016-10-20

    申请号：US15196751

    申请日：2016-06-29

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young CHOI ,  Robin L. TINER ,  Shinichi KURITA ,  John M. WHITE ,  Carl A. SORENSEN ,  Jeffrey A. KHO ,  Suhail ANWAR ,  Makoto INAGAWA ,  Gaku FURUTA

    IPC: C23C16/509

    CPC classification number: C23C16/5096 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/67069

    Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

    Abstract translation: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。 该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和 电极或其组合。

    ELECTRON BEAM WELDING OF LARGE VACUUM CHAMBER BODY HAVING A HIGH EMISSIVITY COATING
    4.
    发明申请
    ELECTRON BEAM WELDING OF LARGE VACUUM CHAMBER BODY HAVING A HIGH EMISSIVITY COATING 有权
    具有高电感涂层的大型真空室体的电子束焊接

    公开(公告)号：US20130327764A1

    公开(公告)日：2013-12-12

    申请号：US13966329

    申请日：2013-08-14

    Applicant: Applied Materials, Inc.

    Inventor： Shinichi KURITA ,  Mehran BEHDJAT ,  Makoto INAGAWA

    IPC: B65D6/02 ,  B65D6/32

    CPC classification number: B65D7/06 ,  B23K15/0006 ,  B65D7/38 ,  H01L21/67379

    Abstract: Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.

    Abstract translation: 本文公开的实施例涉及已经焊接在一起的大型真空室主体。 腔体可以在其中的至少一个表面上具有高发射率涂层。 由于腔室主体的尺寸较大，可以通过将多个部件焊接在一起而不是从单个金属件锻造主体而形成腔体。 这些部件可以在与身体的角部间隔开的位置处被焊接在一起，该位置在排空期间可能处于最大的应力下，以确保可能是身体中最弱点的焊缝不会失效。 室主体的至少一个表面可以涂覆有高发射率涂层，以帮助来自加热的基底的热传递。 高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底通量。

    LAYER STACK FOR DISPLAY APPLICATIONS
    5.
    发明申请
    LAYER STACK FOR DISPLAY APPLICATIONS 审中-公开

    公开(公告)号：US20190148416A1

    公开(公告)日：2019-05-16

    申请号：US15889047

    申请日：2018-02-05

    Applicant: Applied Materials, Inc.

    Inventor： Xiangxin RUI ,  Soo Young CHOI ,  Shinichi KURITA ,  Yujia ZHAI ,  Lai ZHAO

    IPC: H01L27/12 ,  H01L49/02 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56

    Abstract: Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be formed as a part of a capacitor, a gate insulating layer, or any suitable insulating layer in electronic devices, such as display devices. The layer stack includes a second dielectric layer disposed on the first dielectric layer and the metal layer, and the high K dielectric layer disposed on the second dielectric layer. The second dielectric layer provides a homogenous surface on which the high K dielectric layer is formed. The homogeneous surface enables the high K dielectric material to be deposited uniformly thereover, resulting in a uniform thickness profile.

    PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN
    6.
    发明申请
    PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN 审中-公开
    气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号：US20160056019A1

    公开(公告)日：2016-02-25

    申请号：US14932618

    申请日：2015-11-04

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young CHOI ,  John M. WHITE ,  Qunhua WANG ,  Li Hou ,  Ki Woon KIM ,  Shinichi KURITA ,  Tae Kyung WON ,  Suhail ANWAR ,  Beom Soo Park ,  Robin L. TINER

    IPC: H01J37/32

    CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

    Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    Abstract translation: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

    LOAD LOCK CHAMBER WITH SLIT VALVE DOORS
    9.
    发明申请
    LOAD LOCK CHAMBER WITH SLIT VALVE DOORS 有权
    带锁门的负载锁箱

    公开(公告)号：US20140072725A1

    公开(公告)日：2014-03-13

    申请号：US14015326

    申请日：2013-08-30

    Applicant: Applied Materials, Inc.

    Inventor： Shinichi KURITA

    IPC: C23C16/52

    CPC classification number: C23C16/52 ,  C23C16/54 ,  H01J37/32889 ,  H01J37/32899 ,  H01L21/67126 ,  H01L21/67184 ,  H01L21/67201

    Abstract: The present invention generally provides a load lock chamber having slit valve doors. The load lock chamber is used to connect a transfer chamber to a factory interface, or to connect two transfer chambers. When the load lock chamber is between adjacent transfer chambers, the load lock chamber has slit valve doors within the load lock chamber which seal against an inside surface of the load lock chamber. The load lock can thus be serviced at atmospheric pressure without breaking vacuum in the transfer chambers because the atmospheric pressure presses the doors against the inside surface. When the load lock chamber is between a transfer chamber and a factory interface, one slit valve door is disposed outside of the load lock chamber and seals against an outside surface of the load lock chamber. The atmospheric pressure from the factory interface side helps press the door against the outside surface.

    Abstract translation: 本发明通常提供具有狭缝阀门的装载锁定室。 负载锁定室用于将传送室连接到出厂界面，或连接两个传送室。 当负载锁定室位于相邻的传送室之间时，负载锁定室在装载锁定室内具有密封阀门，该门将密封在负载锁定室的内表面上。 因此，由于大气压力将门压靠在内表面上，因此可以在大气压力下对负载锁定进行维修，而不破坏传送室中的真空。 当负载锁定室位于传送室和工厂接口之间时，一个狭缝阀门设置在负载锁定室的外部并且密封抵靠负载锁定室的外表面。 工厂接口侧的大气压力有助于将门压向外表面。

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