公开(公告)号：US09960035B2

公开(公告)日：2018-05-01

申请号：US15399614

申请日：2017-01-05

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

公开(公告)号：US09548200B2

公开(公告)日：2017-01-17

申请号：US14322484

申请日：2014-07-02

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract translation: 本文描述了用于处理衬底的方法和设备。 真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。 本文描述的方法使用可变频率微波辐射来提高脱气过程的质量和速度，而不损害各种组分。

公开(公告)号：US09472392B2

公开(公告)日：2016-10-18

申请号：US14610863

申请日：2015-01-30

Applicant: Applied Materials, Inc.

Inventor： Zongbin Wang ,  Shalina Sudheeran ,  Loke Yuen Wong ,  Arvind Sundarrajan

IPC: H01L21/31 ,  H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228

Abstract: Silicon oxide is deposited with improved step coverage by first exposing a patterned substrate to a silicon-containing precursor and then to an oxygen-containing precursor or vice versa. Plasma excitation is used for both precursors. Exposing the precursors one-at-a-time avoids disproportionate deposition of silicon oxide near the opening of a high aspect ratio gap on a patterned substrate. The plasma-excited precursors exhibit a lower sticking coefficient and/or higher surface diffusion rate in regions already adsorbed and therefore end up depositing silicon oxide deep within the high aspect ratio gap to achieve the improvement in step coverage.

Abstract translation: 通过首先将图案化的衬底暴露于含硅前体，然后再暴露于含氧前体，反之亦然，沉积氧化硅。 等离子体激发用于两种前体。 一次性暴露前体避免了在图案化基底上的高纵横比间隙的开口附近氧化硅不成比例的沉积。 等离子体激发的前体在已经吸附的区域中表现出较低的粘附系数和/或较高的表面扩散速率，因此最终在高纵横比间隙内沉积氧化硅以达到步骤覆盖的改善。

公开(公告)号：US20160225614A1

公开(公告)日：2016-08-04

申请号：US14610863

申请日：2015-01-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Zongbin Wang ,  Shalina Sudheeran ,  Loke Yuen Wong ,  Arvind Sundarrajan

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228

Abstract: Silicon oxide is deposited with improved step coverage by first exposing a patterned substrate to a silicon-containing precursor and then to an oxygen-containing precursor or vice versa. Plasma excitation is used for both precursors. Exposing the precursors one-at-a-time avoids disproportionate deposition of silicon oxide near the opening of a high aspect ratio gap on a patterned substrate. The plasma-excited precursors exhibit a lower sticking coefficient and/or higher surface diffusion rate in regions already adsorbed and therefore end up depositing silicon oxide deep within the high aspect ratio gap to achieve the improvement in step coverage.

Abstract translation: 通过首先将图案化的衬底暴露于含硅前体，然后再暴露于含氧前体，反之亦然，沉积氧化硅。 等离子体激发用于两种前体。 一次性暴露前体避免了在图案化基底上的高纵横比间隙的开口附近氧化硅不成比例的沉积。 等离子体激发的前体在已经吸附的区域中表现出较低的粘附系数和/或较高的表面扩散速率，因此最终在高纵横比间隙内沉积氧化硅以达到步骤覆盖的改善。